Please wait a minute...
Chin. Phys. B, 2012, Vol. 21(5): 056104    DOI: 10.1088/1674-1056/21/5/056104
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

Wang Ying(王颖), Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲)
College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China
Abstract  An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm2 and 6.5 mΩ·mm2 for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
Keywords:  accumulation      Schottky source      reverse recovery time      leakage current  
Received:  22 September 2011      Revised:  27 April 2012      Accepted manuscript online: 
PACS:  61.82.Fk (Semiconductors)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  78.40.Fy (Semiconductors)  
  85.30.Fg (Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60906048) and the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052).

Cite this article: 

Wang Ying(王颖), Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲) A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier 2012 Chin. Phys. B 21 056104

[1] Wang Y, Hu H F, Jiao W L and Cheng C 2010 IEEE Electron Device Lett. 31 338
[2] Chen Y, Liang Y C and Samudra 2007 IEEE Trans. Power Electronics 22 1303
[3] Baliga B J, Syau T and Venkatraman P 1992 IEEE Electron Device Lett. 13 427
[4] Syau T, Venkatraman P and Baliga B J 1994 IEEE Trans. Electron Devices 41 800
[5] Ueno K, Konishi K, Fujisawa Y, Sakai N, Ryoukai K and Seki Y 1998 Proc. ISPSD 325
[6] Tang X Y, Zhang Y M and Zhang Y M 2009 Chin. Phys. B 58 495
[7] Thapar N 2006 (US patent) 7400014 [2005-07-15]
[8] Xu C, Sin J K O, Kang B W, Feng C G, Wu Y and Liu X M 2003 IEEE Trans. Electron Devices 50 1422
[9] Wu L J, Hu S D, Luo X R, Zhang B and Li Z J 2011 Chin. Phys. B 20 107101
[10] Ye H, Su W, Zhang B and Li Z J 2009 Microelectronics & Electronics 137
[11] Alves S, Morancho S, Reynes F and Lopes L M 2003 Proc. ISPSD 308
[12] Ono S, Kawaguchi Y and Naagawa A 2003 ISPSD 28
[13] Wang H, Xu H P E, Ng W T, Fukumoto K, Ishikawa A, Furukawa Y, Imai H, Naito T, Sato N, Sakai K, Tamura S and Takasuka K 2008 IEEE Trans. Electron Devices 29 1239
[1] A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(11): 117105.
[2] Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor
He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙). Chin. Phys. B, 2020, 29(9): 096701.
[3] Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift
Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群). Chin. Phys. B, 2020, 29(3): 034206.
[4] Effects of helium implantation on mechanical properties of (Al0.31Cr0.20Fe0.14Ni0.35)O high entropy oxide films
Zhao-Ming Yang(杨朝明), Kun Zhang(张坤), Nan Qiu(裘南), Hai-Bin Zhang(张海斌), Yuan Wang(汪渊), Jian Chen(陈坚). Chin. Phys. B, 2019, 28(4): 046201.
[5] Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content
Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平). Chin. Phys. B, 2019, 28(12): 127703.
[6] Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs
Sheng Zhang(张昇), Ke Wei(魏珂), Yang Xiao(肖洋), Xiao-Hua Ma(马晓华), Yi-Chuan Zhang(张一川), Guo-Guo Liu(刘果果), Tian-Min Lei(雷天民), Ying-Kui Zheng(郑英奎), Sen Huang(黄森), Ning Wang(汪宁), Muhammad Asif, Xin-Yu Liu(刘新宇). Chin. Phys. B, 2018, 27(9): 097309.
[7] Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs
Jianfei Li(李建飞), Yuanjie Lv(吕元杰), Changfu Li(李长富), Ziwu Ji(冀子武), Zhiyong Pang(庞智勇), Xiangang Xu(徐现刚), Mingsheng Xu(徐明升). Chin. Phys. B, 2017, 26(9): 098504.
[8] Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春). Chin. Phys. B, 2017, 26(8): 087304.
[9] On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋). Chin. Phys. B, 2017, 26(2): 027105.
[10] Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch
Hai-Juan Cui(崔海娟), Hong-Chun Yang(杨宏春), Jun Xu(徐军), Yu-Ming Yang(杨宇明), Zi-Xian Yang(杨子贤). Chin. Phys. B, 2017, 26(1): 017804.
[11] Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer
Da Ma(马达), Xiao-Rong Luo(罗小蓉), Jie Wei(魏杰), Qiao Tan(谭桥), Kun Zhou(周坤), Jun-Feng Wu(吴俊峰). Chin. Phys. B, 2016, 25(4): 048502.
[12] A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉). Chin. Phys. B, 2016, 25(2): 027306.
[13] Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact
Fang Liu(刘芳), Zhixin Qin(秦志新). Chin. Phys. B, 2016, 25(11): 117304.
[14] Modified model of gate leakage currents in AlGaN/GaN HEMTs
Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军). Chin. Phys. B, 2016, 25(10): 107106.
[15] High performance trench MOS barrier Schottky diode with high-k gate oxide
Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓). Chin. Phys. B, 2015, 24(7): 077201.
No Suggested Reading articles found!