High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

doi:10.1088/1674-1056/22/9/097302

Abstract 4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm² with a total active area of 2.46×10^-3 cm². Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10^-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

Keywords: 4H-SiC junction barrier Schottky (JBS) diode high-temperature annealed resistive termination extension (HARTE)

Received: 13 December 2012
Revised: 13 March 2013
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Sx	(Metal-semiconductor-metal structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51102225), the Natural Science Foundation of Beijing City, China (Grant No. 4132076), and the Youth Innovation Promotion Association, Chinese Academy of Sciences.

Corresponding Authors: Zhang Feng
E-mail: fzhang@semi.ac.cn

Cite this article:

Zheng Liu (郑柳), Zhang Feng (张峰), Liu Sheng-Bei (刘胜北), Dong Lin (董林), Liu Xing-Fang (刘兴昉), Fan Zhong-Chao (樊中朝), Liu Bin (刘斌), Yan Guo-Guo (闫果果), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Sun Guo-Sheng (孙国胜), He Zhi (何志), Yang Fu-Hua (杨富华) High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions 2013 Chin. Phys. B 22 097302

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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

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