Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

doi:10.1088/1674-1056/ac272a

Abstract A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

Keywords: Schottky barrier diode hybrid anode dielectric edge termination

Received: 31 July 2021
Revised: 06 September 2021
Accepted manuscript online:

PACS:	77.84.Bw	(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	52.59.Mv	(High-voltage diodes)
	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

Fund: Project supported by the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2020B0101690001) and the Natural Science Foundation of Sichuan Province,China (Grant No.22YYJC0596).

Corresponding Authors: Xiaobo Li,E-mail:lixiaobo166@163.com;Liuan Li,E-mail:liliuan@jlu.edu.cn
E-mail: lixiaobo166@163.com;liliuan@jlu.edu.cn

About author: 2021-9-16

Cite this article:

Qiliang Wang(王启亮), Tingting Wang(王婷婷), Taofei Pu(蒲涛飞), Shaoheng Cheng(成绍恒),Xiaobo Li(李小波), Liuan Li(李柳暗), and Jinping Ao(敖金平) Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode 2022 Chin. Phys. B 31 057702

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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

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