A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

doi:10.1088/1674-1056/ac0e23

Abstract A novel 4H-SiC merged P-I-N Schottky (MPS) with floating back-to-back diode (FBD), named FBD-MPS, is proposed and investigated by the Sentaurus technology computer-aided design (TCAD) and analytical model. The FBD features a trench oxide and floating P-shield, which is inserted between the P+/N-(PN) junction and Schottky junction to eliminate the shorted anode effect. The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently. The FBD reduces not only the V_turn to suppress the snapback effect but also the V_on at bipolar operation. The results show that the snapback can be completely eliminated, and the maximum electric field (E_max) is shifted from the Schottky junction to the FBD in the breakdown state.

Keywords: 4H-SiC merged P-I-N Schottky (MPS) snapback effect turnover voltage floating back-to-back diode (FBD)

Received: 10 May 2021
Revised: 22 June 2021
Accepted manuscript online: 24 June 2021

PACS:	85.30.-z	(Semiconductor devices)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	72.20.Ht	(High-field and nonlinear effects)

Corresponding Authors: Hai-Feng Qin
E-mail: 1531815309@qq.com

Cite this article:

Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生) A 4H-SiC merged P-I-N Schottky with floating back-to-back diode 2022 Chin. Phys. B 31 028503

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A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

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