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Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains |
Jing-Cheng Wang(王旌丞)1, Hao Chen(陈浩)1, Lin-Feng Wan(万琳丰)1, Cao-Yuan Mu(牟草源)1, Yao-Feng Liu(刘尧峰)1, Shao-Heng Cheng(成绍恒)1,2,†, Qi-Liang Wang(王启亮)1,2,‡, Liu-An Li(李柳暗)1, and Hong-Dong Li(李红东)1,2,§ |
1 State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China; 2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China |
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Abstract Hill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p+ single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (~ 1.1×1021 cm-3) is detected on the HPDG with respect to the SCD region (~ 5.4×1020 cm-3). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.
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Received: 01 April 2021
Revised: 14 May 2021
Accepted manuscript online: 20 May 2021
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PACS:
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68.47.Fg
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(Semiconductor surfaces)
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68.47.Gh
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(Oxide surfaces)
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71.55.Eq
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(III-V semiconductors)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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Fund: Project supported by the Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B0101690001) and the National Natural Science Foundation of China (NSFC) (Grant No. 51972135). |
Corresponding Authors:
Shao-Heng Cheng, Qi-Liang Wang, Hong-Dong Li
E-mail: chengshaoheng@jlu.edu.cn;wangqiliang@jlu.edu.cn;hdli@jlu.edu.cn
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Cite this article:
Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东) Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains 2021 Chin. Phys. B 30 096803
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