Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure
Lu-Wei Qi(祁路伟)1,2,3, Xiao-Yu Liu(刘晓宇)2, Jin Meng(孟进)1, De-Hai Zhang(张德海)1, Jing-Tao Zhou(周静涛)2
1 Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China; 2 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China; 3 University of Chinese Academy of Sciences, Beijing 100049, China
Abstract The excellent reverse breakdown characteristics of Schottky barrier varactor (SBV) are crucially required for the application of high power and high efficiency multipliers. The SBV with a novel Schottky structure named metal-brim is fabricated and systemically evaluated. Compared with normal structure, the reverse breakdown voltage of the new type SBV improves from -7.31 V to -8.75 V. The simulation of the Schottky metal-brim SBV is also proposed. Three factors, namely distribution of leakage current, the electric field, and the area of space charge region are mostly concerned to explain the physical mechanism. Schottky metal-brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at Schottky electrode edge.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
