Abstract In this study, Ni germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Ni on Ge, followed by annealing in N2 atmosphere from 300 to 500oC in a furnace. The results of x-ray diffraction (XRD) show that the Ni germanides were formed and the diffraction line of (111) were observed in all samples. The structure of Ni germanide is orthorhombic with lattice parameters a=5.811, b=5.381, c=3.428. However, the lines (121) and (002) were observed only in the samples annealed at a temperature higher than 400oC. The influence of annealing temperature on the electrical properties of Ni germanide Schottky barrier diodes on n-Ge (100) substrate was investigated. Experimental results indicate that Schottky barrier diodes on n-Ge (100) with current-voltage (I-V) rectifier characteristics were obtained. The Ion/Ioff ratio of the Schokky diode obtained by using a 300oC annealing process is the highest. The Schottky barrier heights were evaluated by the capacitance-voltage method.
Received: 11 November 2004
Revised: 26 January 2005
Accepted manuscript online:
Han De-Dong (韩德栋), Liu Xiao-Yan (刘晓彦), Kang Jin-Feng (康晋锋), Xia Zhi-Liang (夏志良), Du Gang (杜刚), Han Ru-Qi (韩汝琦) Fabrication and characteristics of Ni-germanide Schottky contacts with Ge 2005 Chinese Physics 14 1041
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
