Chinese Physics B 2014 author index
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
H
He Ying-Ji
Hu Yin
He Da-Wei
Huang Jie
He Pi-Mo
Huang Xiao-Jun
H. Hassanabadi
H. P. Obong
Hu Xiao-Yang
Han Xiao-Dong
Hou Ming-Dong
He Mao-Gang
Hu Chun-Lian
Han Lin-Chao
Huang Yong-Qing
He Chao-Zheng
Huang Wei-Dong
Huang Zhi-Yuan
Han Zheng-Fu
Huang Yao
Harry L. Swinney
Hu Yong-Sheng
Hong Zhi-Min
Hou Lv-Lin
Hou Yuan-Da
He Gen-Fang
Hu Guo-Hui
He Jun
Hou Yong-Qiang
He Wen-Long
Hao Yue
Cao Yan-Rong
He Wen-Long
Cao Cheng
Yang Yi
Zheng Xue-Feng
Ma Xiao-Hua
Hao Yue
Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
Chin. Phys. B. 2014, 23 (11):117303
doi: 10.1088/1674-1056/23/11/117303
Zhao Sheng-Lei
Mi Min-Han
Hou Bin
Luo Jun
Wang Yi
Dai Yang
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain
Chin. Phys. B. 2014, 23 (10):107303
doi: 10.1088/1674-1056/23/10/107303
Wu Mei
Zheng Da-Yong
Wang Yuan
Chen Wei-Wei
Zhang Kai
Ma Xiao-Hua
Zhang Jin-Cheng
Hao Yue
Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range
Chin. Phys. B. 2014, 23 (9):97307
doi: 10.1088/1674-1056/23/9/097307
Zhao Sheng-Lei
Wang Yuan
Yang Xiao-Lei
Lin Zhi-Yu
Wang Chong
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
Chin. Phys. B. 2014, 23 (9):97305
doi: 10.1088/1674-1056/23/9/097305
Cao Meng-Yi
Lu Yang
Wei Jia-Xing
Chen Yong-He
Li Wei-Jun
Zheng Jia-Xin
Ma Xiao-Hua
Hao Yue
An improved EEHEMT model for kink effect on AlGaN/GaN HEMT
Chin. Phys. B. 2014, 23 (8):87201
doi: 10.1088/1674-1056/23/8/087201
Mao Wei
She Wei-Bo
Yang Cui
Zhang Chao
Zhang Jin-Cheng
Ma Xiao-Hua
Zhang Jin-Feng
Liu Hong-Xia
Yang Lin-An
Zhang Kai
Zhao Sheng-Lei
Chen Yong-He
Zheng Xue-Feng
Hao Yue
A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
Chin. Phys. B. 2014, 23 (8):87305
doi: 10.1088/1674-1056/23/8/087305
Mi Min-Han
Zhang Kai
Chen Xing
Zhao Sheng-Lei
Wang Chong
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
Chin. Phys. B. 2014, 23 (7):77304
doi: 10.1088/1674-1056/23/7/077304
Yang Zhuo
Yang Jing-Zhi
Huang Yong
Zhang Kai
Hao Yue
Effect of alumina thickness on Al2O3/InP interface with post deposition annealing in oxygen ambient
Chin. Phys. B. 2014, 23 (7):77305
doi: 10.1088/1674-1056/23/7/077305
Zhang Jin-Feng
Nie Yu-Hu
Zhou Yong-Bo
Tian Kun
Ha Wei
Xiao Ming
Zhang Jin-Cheng
Hao Yue
Depth-dependent mosaic tilt and twist in GaN epilayer:An approximate evaluation
Chin. Phys. B. 2014, 23 (6):68102
doi: 10.1088/1674-1056/23/6/068102
Li Liang
Yang Lin-An
Xue Jun-Shuai
Cao Rong-Tao
Xu Sheng-Rui
Zhang Jin-Cheng
Hao Yue
Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition
Chin. Phys. B. 2014, 23 (6):67103
doi: 10.1088/1674-1056/23/6/067103
Lei Xiao-Yi
Liu Hong-Xia
Zhang Yue
Ma Xiao-Hua
Hao Yue
Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET
Chin. Phys. B. 2014, 23 (5):57305
doi: 10.1088/1674-1056/23/5/057305
Zhang Yue
Zhuo Qing-Qing
Liu Hong-Xia
Ma Xiao-Hua
Hao Yue
Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
Chin. Phys. B. 2014, 23 (5):57304
doi: 10.1088/1674-1056/23/5/057304
Liao Xue-Yang
Zhang Kai
Zeng Chang
Zheng Xue-Feng
En Yun-Fei
Lai Ping
Hao Yue
Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique
Chin. Phys. B. 2014, 23 (5):57301
doi: 10.1088/1674-1056/23/5/057301
Cao Meng-Yi
Zhang Kai
Chen Yong-He
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
High-efficiency S-band harmonic tuning GaN amplifier
Chin. Phys. B. 2014, 23 (3):37305
doi: 10.1088/1674-1056/23/3/037305
Wen Hui-Juan
Zhang Jin-Cheng
Lu Xiao-Li
Wang Zhi-Zhe
Ha Wei
Ge Sha-Sha
Cao Rong-Tao
Hao Yue
Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer
Chin. Phys. B. 2014, 23 (3):37302
doi: 10.1088/1674-1056/23/3/037302
Feng Qian
Shi Peng
Li Yu-Kun
Du Kai
Wang Qiang
Feng Qing
Hao Yue
Hybrid solar cell based on polythiophene and GaN nanoparticles composite
Chin. Phys. B. 2014, 23 (2):28802
doi: 10.1088/1674-1056/23/2/028802
Dai Xian-Ying
Ji Yao
Hao Yue
A growth kinetics model of rate decomposition for Si1-xGex alloy based on dimer theory
Chin. Phys. B. 2014, 23 (1):15101
doi: 10.1088/1674-1056/23/1/015101
He Yong
Haroon Ur Rasheed
Han Kai
Han Pei-De
Hu Zong-Hai
He Lin
He Peng-Bin
Huang Ru
He Chao
Huang Wen-Qi
H. A. Khalaf
He Wei
Huang Wei-Qing
Huang Gui-Fang
Hao Yun-Qi
Huang Guo-Feng
He Zhi
He Liang-Ju
Hou Zhi-Wen
Huang Xiao-Lin
He Hai-Ping
Hu Feng
Han Wei
Ho Choon-Lin
He Rui
Hsu Hou-Tse
Hu Gang
Huang Xu-Hui
Huang Si-Xun
Hu Li-Qun
Han Ya
H. Rahimpour Soleimani
He Xiao-Min
Huang Lei
He Mao-Cheng
Huang Cheng-Cheng
Hu Ren-Zhi
He Jin-Na
Hou Bin
Han Yi-Wen
Hong Yun
Huang Jian-Wei
Han Qing-Bang
Hu Zhen-Yue
H. M. El-Hawary
Hu Tao
Han Xiang-Lin
He Yue-Hong
Hao Meng-Li
Hu Guo-Jie
Hu Qiu-Shi
Huang Jing-Zheng
Han Zhen-Fu
Huang Shuai
Hu Xiao-Jun
Huang Hai-Jun
Huo De-Xuan
Hu Li-Fa
Han Yan-Hua
Hassen Dakhlaoui
Han Qi-Xing
Huang Ke-Qiang
Huang Kui-Dong
Huang Li
He Yun
Hou Xiao-Yuan
He Jin
Hao Bin-Bin
Huang Ke-Shu
Huang Liang-Jin
Hu Zhi-Yuan
Huang Hui-Xiang
Hong Jin
Hyung Jin Yang
Hao Zuo-Qiang
Hamed H. Alsulami
Han Ying
He Hong-Di
Huang Yi
He Kun-Peng
Han Zheng-Sheng
Hu Shu-Juan
Huang Qi-Can
He Ao-Dong
Huang Jingfeng
He Tao
Huo Zong-Liang
Han Wei-Hua
Hua Yu-Lin
Hu Yong
He Miao
Hu Xiao-Ying
Huang Jiao
Hu Qiao
Han Man-Gui
Hou Li-Yan
Huang Zhen-Hua
Hu Wei
Hu Gui-Chao
Han Xiu-Feng
Hou Mei-Ying
Hao Dong
Hu Gang-Yi
Huang Min
Han Jun
Huang Zhi-Yi
Hu Tian-Li
Han Bing
Huang Zhi-Hong
Hu Feng-Wei
Huang Ming
He Ya-Feng
Huang Liang
Huang Ji-Ping
Huang Bin
Hu Lei
He Ming
Hao Guang-Zhou
He Long-Min
He Zhen-Xin
Huang Xue-Jiao
He Li-Min
Huang Yong
Hu Ming
Hong Wei
He Wei-Hua
H R Baghshahi
Huang Fang
Hong Jin-Song
Hu Jian-Quan
Herbert H. C. Iu
Hu Yi-Hua
Huang Jin-Wang
He Yi-Bai
Hu Hai-Bao
Huang Su-He
Huang Hai-Yan
Huang Sheng-You
Hossam A. Ghany
He Juan
He Yu-Bo
Ha Wei
Hans Burkhardt
He Xiao-Guang
Heng Hang
He Jie
He Meng-Dong
Han Jia-Guang
Hu Sheng-Dong
He Yu-Dan
Huang Hong-Hua
Hua Li-Li
Hua Wei
Han Dan-Dan
He Guo-Liang
He Xiao-Hai
Hou Yang-Long
Han Yue
Huang Shi-Hua
Hua Xue-Mei
Han Ping
He Fei-Si
He Fa
He Xian-Tu
H. M. Malaikah
Han Gao-Rong
Hanjung Song
Hamidreza Emamipour
He Su-Hong
Huang Yan-Hua
Han Shi-Xuan
Huang Zhi-Gao
Hu Long
Han Guang-Bing
Hou Jing
Hu Li-Yun
He Fan-Min
Hu Zheng-Feng
Hu Man-Feng
Hu Ai-Hua
He Su-Zhen
Huang Shi-Hao
Hossein Tamim
He Qiong
Hu Hai-Quan
Huang Qing-Li
Hu Ju-Ju
Han Le
H. S. Soliman
H. A. M. Ali
Huang Wen-Bin
Horia Chiriac
Hu Chun-Hong
Hou Wei
He Wen-Ping
Huang Jing-Jian
Han Ke-Chang
He Yong-Zhou
He An-Min
Hu Xiong-Wei
Han Dan
Hu Bi-Tao
He Shu-Min
Huang Zhe
Huang Da
Huang Hai-Bin
Huang Wei
Huang Jiang
Huang Yan
Huang Qing-Yu
Hao Wei-Chang
Hu Dong
Hu Ye-Lin
Hu Xi-Wei
Han Rui
Huang Qing-Zhen
Huang Lu
Hyun Jong Shin
Hu Yan-Min
Huang Jie-Hui
He Jun-Rong
Hai Wen-Hua
Hu Yue-Bo
Hai Lian
Huang Xiao-Li
Hu Mao-Jin
Hu Liang-Bin
Hu Chang-Gang
He Cai-Xia
Helmut Seidel
He Pan
Huang Duo-Hui
Hu Bo
He Zhen-Hong
Hilal Yucel Kurt
He Bo
Huang Liang-Hui
Hou Shun-Yong
Hao Jin-Ping
Hamid Reza Abbasi
Han Kui
Hao Da-Peng
Huang Yan-Ru