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Chin. Phys. B, 2014, Vol. 23(4): 048109    DOI: 10.1088/1674-1056/23/4/048109
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

Huang Shi-Hao, Li Cheng, Lu Wei-Fang, Wang Chen, Lin Guang-Yang, Lai Hong-Kai, Chen Song-Yan
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Abstract  Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator (SOI) to form SiGe-on-insulator (SGOI) substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.
Keywords:  SGOI      Ge condensation      non-homogeneity  
Received:  14 July 2013      Revised:  24 October 2013      Accepted manuscript online: 
PACS:  81.65.Mq (Oxidation)  
  71.55.Cn (Elemental semiconductors)  
  81.30.Bx (Phase diagrams of metals, alloys, and oxides)  
Fund: Project supported by the National Key Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176092, 61036003, and 60837001), the Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20110121110025), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2010121056).
Corresponding Authors:  Li Cheng     E-mail:  lich@xmu.edu.cn
About author:  81.65.Mq; 71.55.Cn; 81.30.Bx

Cite this article: 

Huang Shi-Hao, Li Cheng, Lu Wei-Fang, Wang Chen, Lin Guang-Yang, Lai Hong-Kai, Chen Song-Yan Non-homogeneous SiGe-on-insulator formed by germanium condensation process 2014 Chin. Phys. B 23 048109

[1] Liu J, Kimerling L C and Michel J 2012 Semicond. Sci. Technol. 27 094006
[2] Yamamoto K, Ueno R, Yamanaka T, Hirayama K, Yang H, Wang D and Nakashima H 2011 Appl. Phys. Express 4 051301
[3] Soref R 2006 IEEE J. Sel. Top. Quantum Electron. 12 1678
[4] Wu Z, Wang C, Yan G M, Liu G Z, Li C, Huang W, Lai H K and Chen S Y 2012 Acta Phys. Sin. 61 186105 (in Chinese)
[5] Huang S, Li C, Chen C Z, Zheng Y Y, Lai H K and Chen S Y 2012 Acta Phys. Sin. 61 036202 (in Chinese)
[6] Taraschi G, Pitera A J and Fitzgerald E A 2004 Solid-State Electron. 48 1297
[7] Nakaharai S, Tezuka T, Hirashita N, Toyoda E, Moriyama Y, Sugiyama N and Takagi S 2009 J. Appl. Phys. 105 024515
[8] Tezuka T, Sugiyama N and Takagi S 2001 Appl. Phys. Lett. 79 1798
[9] Bedell S, Fogel K, Sadana D and Chen H 2004 Appl. Phys. Lett. 85 5869
[10] Di Z, Chu P K, Zhang M, Liu W, Song Z and Lin C 2005 J. Appl. Phys. 97 064504
[11] Balakumar S, Lo G Q, Tung C H, Kumar R, Balasubramanian N, Kwong D L, Ong C S and Li M F 2006 Appl. Phys. Lett. 89 042115
[12] Shimura T, Shimizu M, Horiuchi S, Watanabe H, Yasutake K and Umeno M 2006 Appl. Phys. Lett. 89 111923
[13] Wang G H, Toh E H, Foo Y L, Tung C H, Choy S F, Samudra G and Yeo Y C 2006 Appl. Phys. Lett. 89 053109
[14] Huang W Q and Liu S R 2004 Chin. Phys. 13 1163
[15] Huang W Q, Wang H X, Jin F and Qin C J 2008 Chin. Phys. B 17 3753
[16] Balakumar S, Peng S, Hoe K M, Agarwal A, Lo G Q, Kumar R, Balasubramanian N, Kwong D L and Tripathy S 2007 Appl. Phys. Lett. 90 032111
[17] Gunji M, Marshall A F and McIntyre P C 2011 J. Appl. Phys. 109 014324
[18] Zhang Y, Cai K, Li C, Chen S, Lai H and Kang J 2009 J. Electrochem. Soc. 156 H115
[19] Hu M, Li C, Xu J F, Lai H K and Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese)
[20] Huang S, Lu W, Li C, Huang W, Lai H and Chen S 2013 Opt. Express 21 640
[21] Hellberg P E, Zhang S L and Petersson C 1997 J. Appl. Phys. 82 5773
[22] Tsang J, Mooney P, Dacol F and Chu J 1994 J. Appl. Phys. 75 8098
[23] Chen Y, Li C, Lai H and Chen S 2010 Nanotechnology 21 115207
[24] Shin H, Lockwood D and Baribeau J M 2000 Solid State Commun. 114 505
[25] Perova T S, Wasyluk J, Lyutovich K, Kasper E, Oehme M, Rode K and Waldron A 2011 J. Appl. Phys. 109 033502
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