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Chin. Phys. B, 2014, Vol. 23(4): 046804    DOI: 10.1088/1674-1056/23/4/046804
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

Han Lea b, Wang Sheng-Kaib, Zhang Xionga, Xue Bai-Qingb, Wu Wang-Ranc, Zhao Yic, Liu Hong-Gangb
a Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
b Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
c School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Abstract  We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeOx interfacial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which the Al2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge (100) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (Ion/Ioff) ratio of above 1× 104, a subthreshold slope of ~ 120 mV/dec, and a peak hole mobility of 265 cm2/V· s are achieved.
Keywords:  GeOx interfacial layer      thermal oxidation      GeO desorption      Al2O3  
Received:  03 August 2013      Revised:  23 October 2013      Accepted manuscript online: 
PACS:  68.35.Ct (Interface structure and roughness)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2011CBA00607), the National Natural Science Foundation of China (Grant No. 61204103), and the National Science & Technology MajorProject of China (Grant No. 2011ZX02708-003).
Corresponding Authors:  Wang Sheng-Kai, Liu Hong-Gang     E-mail:  wangshengkai@ime.ac.cn;liuhonggang@ime.ac.cn
About author:  68.35.Ct; 73.40.Qv; 85.30.Tv

Cite this article: 

Han Le, Wang Sheng-Kai, Zhang Xiong, Xue Bai-Qing, Wu Wang-Ran, Zhao Yi, Liu Hong-Gang Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge 2014 Chin. Phys. B 23 046804

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