Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

doi:10.1088/1674-1056/23/8/088107

Abstract Single and multiple n-channel junctionless nanowire transistors (JNTs) are fabricated and experimentally investigated at variable temperatures. Clear current oscillations caused by the quantum-confinement effect are observed in the curve of drain current versus gate voltage acquired at low temperatures (10 K-100 K) and variable drain bias voltages (10 mV-90 mV). Transfer characteristics exhibit current oscillation peaks below flat-band voltage (V_FB) at temperatures up to 75 K, which is possibly due to Coulomb-blocking from quantum dots, which are randomly formed by ionized dopants in the just opened n-type one-dimensional (1D) channel of silicon nanowires. However, at higher voltages than V_FB, regular current steps are observed in single-channel JNTs, which corresponds to the fully populated subbands in the 1D channel. The subband energy spacing extracted from transconductance peaks accords well with theoretical predication. However, in multiple-channel JNT, only tiny oscillation peaks of the drain current are observed due to the combination of the drain current from multiple channels with quantum-confinement effects.

Keywords: junctionless nanowire transistors (JNT) quantum transport current oscillations low temperatures

Received: 04 September 2013
Revised: 17 February 2014
Accepted manuscript online:

PACS:	81.07.Gf	(Nanowires)
	85.30.Tv	(Field effect devices)
	73.63.Hs	(Quantum wells)
	07.20.Mc	(Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)

Fund: Project supported partly by the National Basic Research Program of China (Grant No. 2010CB934104) and the National Natural Science Foundation of China (Grant Nos. 61376069 and 61327813).

Corresponding Authors: Han Wei-Hua
E-mail: weihua@semi.ac.cn

Cite this article:

Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华) Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures 2014 Chin. Phys. B 23 088107

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Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

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