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Chin. Phys. B, 2014, Vol. 23(8): 088107    DOI: 10.1088/1674-1056/23/8/088107
SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 Prev   Next  

Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

Wang Hao, Han Wei-Hua, Ma Liu-Hong, Li Xiao-Ming, Yang Fu-Hua
Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Single and multiple n-channel junctionless nanowire transistors (JNTs) are fabricated and experimentally investigated at variable temperatures. Clear current oscillations caused by the quantum-confinement effect are observed in the curve of drain current versus gate voltage acquired at low temperatures (10 K-100 K) and variable drain bias voltages (10 mV-90 mV). Transfer characteristics exhibit current oscillation peaks below flat-band voltage (VFB) at temperatures up to 75 K, which is possibly due to Coulomb-blocking from quantum dots, which are randomly formed by ionized dopants in the just opened n-type one-dimensional (1D) channel of silicon nanowires. However, at higher voltages than VFB, regular current steps are observed in single-channel JNTs, which corresponds to the fully populated subbands in the 1D channel. The subband energy spacing extracted from transconductance peaks accords well with theoretical predication. However, in multiple-channel JNT, only tiny oscillation peaks of the drain current are observed due to the combination of the drain current from multiple channels with quantum-confinement effects.
Keywords:  junctionless nanowire transistors (JNT)      quantum transport      current oscillations      low temperatures     
Received:  04 September 2013      Published:  15 August 2014
PACS:  81.07.Gf (Nanowires)  
  85.30.Tv (Field effect devices)  
  73.63.Hs (Quantum wells)  
  07.20.Mc (Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)  
Fund: Project supported partly by the National Basic Research Program of China (Grant No. 2010CB934104) and the National Natural Science Foundation of China (Grant Nos. 61376069 and 61327813).
Corresponding Authors:  Han Wei-Hua     E-mail:

Cite this article: 

Wang Hao, Han Wei-Hua, Ma Liu-Hong, Li Xiao-Ming, Yang Fu-Hua Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures 2014 Chin. Phys. B 23 088107

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