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Chin. Phys. B, 2014, Vol. 23(8): 088107    DOI: 10.1088/1674-1056/23/8/088107
SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 Prev   Next  

Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

Wang Hao, Han Wei-Hua, Ma Liu-Hong, Li Xiao-Ming, Yang Fu-Hua
Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Single and multiple n-channel junctionless nanowire transistors (JNTs) are fabricated and experimentally investigated at variable temperatures. Clear current oscillations caused by the quantum-confinement effect are observed in the curve of drain current versus gate voltage acquired at low temperatures (10 K-100 K) and variable drain bias voltages (10 mV-90 mV). Transfer characteristics exhibit current oscillation peaks below flat-band voltage (VFB) at temperatures up to 75 K, which is possibly due to Coulomb-blocking from quantum dots, which are randomly formed by ionized dopants in the just opened n-type one-dimensional (1D) channel of silicon nanowires. However, at higher voltages than VFB, regular current steps are observed in single-channel JNTs, which corresponds to the fully populated subbands in the 1D channel. The subband energy spacing extracted from transconductance peaks accords well with theoretical predication. However, in multiple-channel JNT, only tiny oscillation peaks of the drain current are observed due to the combination of the drain current from multiple channels with quantum-confinement effects.
Keywords:  junctionless nanowire transistors (JNT)      quantum transport      current oscillations      low temperatures     
Received:  04 September 2013      Published:  15 August 2014
PACS:  81.07.Gf (Nanowires)  
  85.30.Tv (Field effect devices)  
  73.63.Hs (Quantum wells)  
  07.20.Mc (Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)  
Fund: Project supported partly by the National Basic Research Program of China (Grant No. 2010CB934104) and the National Natural Science Foundation of China (Grant Nos. 61376069 and 61327813).
Corresponding Authors:  Han Wei-Hua     E-mail:  weihua@semi.ac.cn

Cite this article: 

Wang Hao, Han Wei-Hua, Ma Liu-Hong, Li Xiao-Ming, Yang Fu-Hua Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures 2014 Chin. Phys. B 23 088107

[1] Colinge J P 2004 Solid-State Electron. 48 897
[2] Colinge J P 2008 FinFETs and Other Multi-Gate Transistors (New York: Springer) pp. 1-48
[3] Colinge J P, Gao M, Romano-Rodriguez A, Maes H and Claeys C 1990 Electron Devices Meeting, 1990, IEDM 'm 90. Technical Digest., International, December 9-12 1990, San Francisco, CA, USA, p. 595
[4] Ferain I, Colinge C A and Colinge J P 2011 Nature 479 310
[5] Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I and Colinge J P 2009 Appl. Phys. Lett. 94 053511
[6] Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O'Neill B, Blake A and White M 2010 Nature Nanotech. 5 225
[7] Park J T, Kim J Y, Lee C W and Colinge J P 2010 Appl. Phys. Lett. 97 172101
[8] Evans G, Mizuta H and Ahmed H 2001 Jpn. J. Appl. Phys. 40 5837
[9] Sellier H, Lansbergen G P, Caro J, Rogge S, Collaert N, Ferain I, Jurczak M and Biesemans S 2006 Phys. Rev. Lett. 97 206805
[10] Tabe M, Moraru D, Ligowski M, Anwar M, Jablonski R, Ono Y and Mizuno T 2010 Phys. Rev. Lett. 105 016803
[11] Trevisoli R D, Doria R T, de Souza M and Pavanello M A 2011 Semicond. Sci. Technol. 26 105009
[12] Kim R and Lundstrom M S 2008 IEEE Trans. Nanotechnol. 7 787
[13] Li X M, Han W H, Wang H, Ma L H, Zhang Y B, Du Y D and Yang F H 2013 Appl. Phys. Lett. 102 223507
[14] Augke R, Eberhardt W, Single C, Prins F, Wharam D and Kern D 2000 Appl. Phys. Lett. 76 2065
[15] Je M, Han S, Kim I and Shin H 2000 Solid-State Electron. 44 2207
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