Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering

doi:10.1088/1674-1056/23/5/058105

Abstract Si-rich Si_1-xC_x/SiC multilayer thin films are prepared using magnetron sputtering, subsequently followed by thermal annealing in the range of 800-1200 ℃. The influences of annealing temperature (T_a) on the formation of Si and/or SiC nanocrystals (NCs) and on the electrical characteristics of the multilayer film are investigated by using a variety of analytical techniques, including X-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared spectrometry (FT-IR), current-voltage (I-V) technique, and capacitance-voltage (C-V) technique. XRD and Raman analyses indicate that Si NCs begin to form in samples for T_a ≥ 800 ℃. At annealing temperatures of 1000 ℃ or higher, the formation of Si NCs is accompanied by the formation of SiC NCs. With the increase in the annealing temperature, the shift of FT-IR Si-C bond absorption spectra toward a higher wave number along with the change of band shape can be explained by a Si-C transitional phase between the loss of substitutional carbon and the formation of SiC precipitates and a precursor for the growth of SiC crystalline. The C-V and I-V results indicate that the interface quality of Si_1-xC_x/SiC multilayer film is improved significantly and the leakage current is reduced rapidly for T_a ≥ 1000 ℃, which can be ascribed to the formation of Si and SiC NCs.

Keywords: SiC magnetron sputtering annealing leakage current

Received: 08 August 2013
Revised: 31 October 2013
Accepted manuscript online:

PACS:	81.15.Cd	(Deposition by sputtering)
	78.55.Ap	(Elemental semiconductors)
	68.55.A-	(Nucleation and growth)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University, China (Grant No. FDS-KL2011-04), the Key Science and Technology Innovation Team of Zhejiang Province, China (Grant No. 2011R50012), and the Key Laboratory of Zhejiang Province, China (Grant No. 2013E10022).

Corresponding Authors: Huang Shi-Hua
E-mail: huangshihua@zjnu.cn

About author: 81.15.Cd; 78.55.Ap; 68.55.A-; 81.40.Ef

Cite this article:

Huang Shi-Hua (黄仕华), Liu Jian (刘剑) Structural and electrical characterization of annealed Si_1-xC_x/SiC thin film prepared by magnetron sputtering 2014 Chin. Phys. B 23 058105

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Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering

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Structural and electrical characterization of annealed Si_1-xC_x/SiC thin film prepared by magnetron sputtering