Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

doi:10.1088/1674-1056/23/12/127302

Abstract Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the 'T₀ anomaly' and the difference (ΔФ) between the uniformly high barrier height (Ф_B⁰) and the effective barrier height (Ф_B^eff). Those two parameters of Ti Schottky contacts on 4H–SiC were deduced from I–V measurements in the temperature range of 298 K–503 K. The increase in Schottky barrier (SB) height (Ф_B) and decrease in the ideality factor (n) with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-℃ thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.

Keywords: Schottky contact SiC inhomogeneity barrier

Received: 02 April 2014
Revised: 09 July 2014
Accepted manuscript online:

PACS:

73.40.Ns

(Metal-nonmetal contacts)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61106080 and 61275042) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305).

Corresponding Authors: Shen Hua-Jun
E-mail: shenhuajun@ime.ac.cn

Cite this article:

Han Lin-Chao (韩林超), Shen Hua-Jun (申华军), Liu Ke-An (刘可安), Wang Yi-Yu (王弋宇), Tang Yi-Dan (汤益丹), Bai Yun (白云), Xu Heng-Yu (许恒宇), Wu Yu-Dong (吴煜东), Liu Xin-Yu (刘新宇) Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts 2014 Chin. Phys. B 23 127302


[1]	Roccaforte F, Giannazzo F and Raineri V 2010 J. Phys. D: Appl. Phys. 43 223001

[2]	Hallin C, Yakimova R, Pécz B, Georgieva A, Marinova Ts, Kasamakova L, Kakanakov R and Janzén E 1997 J. Electron. Mater. 26 119

[3]	Marinova Ts, Kakanakova-Georgieva A, Krastev V, Kakanakov R, Neshev M, Kassamakova L, Noblanc O, Arnodo C, Cassette S, Brylinski C, Pecz B, Radnoczi G and Bincze Gy 1997 Mater. Sci. Eng. B 46 223

[4]	Guo H, Zhang Y M, Qiao D Y, Sun L and Zhang Y M 2007 Chin. Phys. 16 1753

[5]	Barda B, Macháč P and Hubičková 2008 Microelectron. Eng. 85 2022

[6]	Gupta S K, Azam A and Akhtar J 2011 Physica B 406 3030

[7]	Lee S K, Zetterling C M and Ostling M 2000 J. Appl. Phys. 87 8039

[8]	Shalish I, Oliveira C E M D, Shapira Y, Burstein L and Eizenberg M 2000 J. Appl. Phys. 88 5724

[9]	Cole M W, Joshi P C, Hubbard C W, Wood M C, Ervin M H, Geil B and Ren F 2000 J. Appl. Phys. 88 2652

[10]	Roccaforte F, Via F L, Franco S D and Raineri V 2003 Microelectron. Eng. 70 524

[11]	Defives D, Noblanc O, Dua C, Brylinski C, Barthula M, Aubry-Fortuna V and Meyer F 1999 IEEE Trans. Electron. Dev. 46 449

[12]	Roccaforte F, Via F L and Raineri V 2003 Appl. Phys. A 77 543

[13]	Hamida A F, Ouennoughi Z, Sellai A, Weiss R and Ryssel H 2008 Semicond. Sci. Technol. 23 045005

[14]	Pérez R, Mestres N, Montserrat J, Tournier D and Godignon P 2005 Phys. Status Solidi A 202 692

[15]	Tung R T 1992 Phys. Rev. B 45 13509

[16]	Im H J, Ding Y, Pelz P and Choyke W J 2001 Phys. Rev. B 64 075310

[17]	Benmaza H, Akkal B, Abid H, Bluet J M, Anani M and Bensaad Z 2008 Microelectron. J. 39 80

[18]	Dae H K, Jong H L, Jeong H M, Myong S O, Ho K S, Jeong H Y, Jae B L and Hyeong J K 2007 Solid State Phenomena 124-126 105

[19]	Rhoderick E H and Williams R H 1998 Metal-Semiconductor Contact 2nd edn. (Oxford: Clarendon), ISBN-13: 978-0198593355

[20]	Itoh A, Kimoto T and Matsunami H 1995 IEEE Electron. Dev. Lett. 16 280

[21]	Calcagno L, Ruggiero A, Roccaforte F and La Via F 2005 J. Appl. Phys. 98 023713

[22]	Wang Y H, Zhang Y M, Zhang Y M, Song Q W and Jia R X 2011 Chin. Phys. B 20 087305

[23]	Schmitsdirf R F, Kampen T U and Mönch W 1997 J. Vac. Sci. Technol. B 15 1221

[24]	Song Q W, Zhang Y M, Zhang Y M, Chen F P and Tang X Y 2011 Chin. Phys. B 20 057301

[25]	Levit M, Grimberg I and Weiss B Z 1996 J. Appl. Phys. 80 167

[26]	Akinmasa K, Takashi N, Takasumi O, Tsutomu Y, Kenji F, Hajime O and Kazuo A 2009 Mater. Sci. Forum 600-603 643

[27]	Defives D, Durand Q, Wyczisk F, Olivier J, Noblanc O and Brylinski 2000 Mater. Sci. Forum 338-342 411

[28]	Goesmann F and Schmid-Fetzer R 1995 Semicond. Sci. Technol. 10 461

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Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

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