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Chin. Phys. B, 2014, Vol. 23(4): 048108    DOI: 10.1088/1674-1056/23/4/048108
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

Zhu Nai-Wei, Hu Ming, Xia Xiao-Xu, Wei Xiao-Ying, Liang Ji-Ran
School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
Abstract  The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-℃ hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.
Keywords:  rapid thermal process      VO2 thin film      phase transition      modification  
Received:  04 September 2013      Revised:  24 October 2013      Accepted manuscript online: 
PACS:  81.40.Gh (Other heat and thermomechanical treatments)  
  81.05.Hd (Other semiconductors)  
  81.40.Rs (Electrical and magnetic properties related to treatment conditions)  
  81.40.Tv (Optical and dielectric properties related to treatment conditions)  
Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029).
Corresponding Authors:  Hu Ming     E-mail:  huming@tju.edu.cn
About author:  81.40.Gh; 81.05.Hd; 81.40.Rs; 81.40.Tv

Cite this article: 

Zhu Nai-Wei, Hu Ming, Xia Xiao-Xu, Wei Xiao-Ying, Liang Ji-Ran Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process 2014 Chin. Phys. B 23 048108

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