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Chin. Phys. B, 2014, Vol. 23(4): 048108    DOI: 10.1088/1674-1056/23/4/048108

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

Zhu Nai-Wei, Hu Ming, Xia Xiao-Xu, Wei Xiao-Ying, Liang Ji-Ran
School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
Abstract  The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-℃ hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.
Keywords:  rapid thermal process      VO2 thin film      phase transition      modification  
Received:  04 September 2013      Revised:  24 October 2013      Accepted manuscript online: 
PACS:  81.40.Gh (Other heat and thermomechanical treatments)  
  81.05.Hd (Other semiconductors)  
  81.40.Rs (Electrical and magnetic properties related to treatment conditions)  
  81.40.Tv (Optical and dielectric properties related to treatment conditions)  
Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029).
Corresponding Authors:  Hu Ming     E-mail:
About author:  81.40.Gh; 81.05.Hd; 81.40.Rs; 81.40.Tv

Cite this article: 

Zhu Nai-Wei, Hu Ming, Xia Xiao-Xu, Wei Xiao-Ying, Liang Ji-Ran Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process 2014 Chin. Phys. B 23 048108

[1] Morin F J 1959 Phys. Rev. Lett. 3 34
[2] Ruzmetov D, Senanayake S D, Narayanamurti V and Ramanathan S 2008 Phys. Rev. B 77 195442
[3] Ma J W, Xu G, Miao L, Tazawa M and Tanemura S 2011 Jpn. J. Appl. Phys 50 020215
[4] Bialas H, Dillenz A, Downar H and Ziemann P 1999 Thin Solid Films 338 60
[5] Pashkin A, Kubler C, Ehrke H, Lopez R, Halabica A, Haglund R F Jr, Huber R and Leitenstorfer A 2011 Phys. Rev. B 83 195120
[6] Wang X J, Liu Y Y, Li D H, Feng B H, He Z W and Qi Z 2013 Chin. Phys. B 22 066803
[7] Kyoung J S, Choi S B, Kim H S, Ahn Y H, Kim H T and KiM D S 2011 AIP Adv. 1399 1027
[8] Soltani M, Chaker M, Haddad E and Kruzelesky R 2006 Meas. Sci. Technol. 17 1052
[9] Wei X Y, Hu M, Zhang K L, Wang F and Liu K 2013 Acta Phys. Sin. 62 047201 (in Chinese)
[10] Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L and Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)
[11] Lee J S, Ortolani M and Schade U 2007 Appl. Phys. Lett. 91 133509
[12] Zhang K L, Liu K, Wang F, Yi F H, Wei X Y and Zhao J S 2013 Chin. Phys. B 22 217201
[13] Batista C, Ribeiro R, Carneiro J and Teixeira V 2009 J. Nanosci. Nanotechnol. 9 4220
[14] Wang B, Lai J J, Zhao E J, Hu H M, Liu Q and Chen S H 2012 Opt. Eng. 51 074003
[15] Wang Y Q, Zhang Z J, Zhu Y, Li Z C, Vajtai R, Ci L J and Ajayan P M 2008 ACS Nano 2 1492
[16] Nag J, Payzant E A, More K L and Haglund R F 2011 Appl. Phys. Lett. 98 2519161
[17] Ruzmetov D, Zawilski K T, Narayanamurti V and Ramanathan S 2007 Appl. Phys. Lett. 102 113715
[18] Chen C and Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[19] Nagashima K, Yanagida T, Tanaka H and Kawai T 2007 Appl. Phys. Lett. 101 026103
[20] Wu Z P, Yamamoto S, Miyasita A, Zhang Z J, Narumi K and Naramoto H 1998 Journal of Physics 10 765
[21] Al-Kuhaili M F, Khawaja E E, Ingram D C and Durrani S M A 2004 Thin Solid Films 460 30
[22] Huang Z L, Chen S H, Chen Y, Huang Y, Fu W and Lai J J 2012 Surf. & Coat. Technol. 207 130
[23] Wang T, Jiang Y D, Yu H, Wu Z M and Zhao H N Chin. Phys. B 22 038101
[24] Wang X J, Liang C J, Guan K P, Li D H, Nie Y X, Zhu S Q, Huang F, Zhang W W and Cheng Z W 2008 Chin. Phys. B 17 3512
[25] Nakajima M, Takubo N, Hiroi Z, Ueda Y and Suemoto T 2008 Appl. Phys. Lett. 92 011907
[26] Yuan N Y, Li J H and Lin C L 2002 Acta Phys. Sin. 51 085205 (in Chinese)
[27] He Qiong, Xu X D, Wen E J, Jiang Y D, Ao T H, Fan T J, Huang L, Ma C Q and Sun Z Q 2013 Acta Phys. Sin. 62 056082 (in Chinese)
[28] Wu B, Hu M, Hou S B, Lü Z H, Gao W and Liang J R 2012 Acta Phys. Sin. 61 188101 (in Chinese)
[29] Gao W, Hu M, Hou S B, Lü Z H and Wu B 2013 Acta Phys. Sin. 62 018104 (in Chinese)
[30] He L, Li Z C and Zhang Z J 2008 Nanotechnology 19 155606
[31] Zhang H, Liu Y S, Liu W H, Wang B Y and Wei L 2007 Acta Phys. Sin. 56 7255 (in Chinese)
[32] Alov N, Kutsko D, Spirovova I and Bastl Z 2006 Surf. Sci. 600 1628
[33] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C and El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[34] Chae B G, Kim H T, Yun S J, Kim B J, Lee Y W, Youn D H and Kang K Y 2006 Electrochem. Solid State Lett. 9 12
[35] Jepsen P U, Fischer B M, Thoman A, Helm H, Suh J Y, Lopez R and Haglund R F 2006 Phys. Rev. B 74 205103
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