Chinese Physics B 2014 author index
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
M
Ma Hai-Qiang
Meng Zhou
M. Syed Ali
Ma Da
Mi Jian-Chun
M. A. Vallejo H.
M. A. Martinez G.
M. Rezazadeh
Mutua Stephen
Ma Feng-Cai
Meng Yan-Hong
Mazhar Ali
Miao Nan-Xi
M. Ismail
M. W. Abbas
M. Y. Nadeem
M. Hussain
M. T. Bhatti
Min Shu-Cun
M. Eshghi
Ma Tie-Dong
M. Gregory Forest
Ma Li
Ma Xiao-Hua
Cao Yan-Rong
He Wen-Long
Cao Cheng
Yang Yi
Zheng Xue-Feng
Ma Xiao-Hua
Hao Yue
Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
Chin. Phys. B. 2014, 23 (11):117303
doi: 10.1088/1674-1056/23/11/117303
Lei Xiao-Yi
Liu Hong-Xia
Gao Hai-Xia
Yang Ha-Ni
Wang Guo-Ming
Long Shi-Bing
Ma Xiao-Hua
Liu Ming
Resistive switching characteristics of Ti/ZrO2/Pt RRAM device
Chin. Phys. B. 2014, 23 (11):117305
doi: 10.1088/1674-1056/23/11/117305
Zhao Sheng-Lei
Mi Min-Han
Hou Bin
Luo Jun
Wang Yi
Dai Yang
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain
Chin. Phys. B. 2014, 23 (10):107303
doi: 10.1088/1674-1056/23/10/107303
Wu Mei
Zheng Da-Yong
Wang Yuan
Chen Wei-Wei
Zhang Kai
Ma Xiao-Hua
Zhang Jin-Cheng
Hao Yue
Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range
Chin. Phys. B. 2014, 23 (9):97307
doi: 10.1088/1674-1056/23/9/097307
Zhao Sheng-Lei
Wang Yuan
Yang Xiao-Lei
Lin Zhi-Yu
Wang Chong
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
Chin. Phys. B. 2014, 23 (9):97305
doi: 10.1088/1674-1056/23/9/097305
Cao Meng-Yi
Lu Yang
Wei Jia-Xing
Chen Yong-He
Li Wei-Jun
Zheng Jia-Xin
Ma Xiao-Hua
Hao Yue
An improved EEHEMT model for kink effect on AlGaN/GaN HEMT
Chin. Phys. B. 2014, 23 (8):87201
doi: 10.1088/1674-1056/23/8/087201
Mao Wei
She Wei-Bo
Yang Cui
Zhang Chao
Zhang Jin-Cheng
Ma Xiao-Hua
Zhang Jin-Feng
Liu Hong-Xia
Yang Lin-An
Zhang Kai
Zhao Sheng-Lei
Chen Yong-He
Zheng Xue-Feng
Hao Yue
A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
Chin. Phys. B. 2014, 23 (8):87305
doi: 10.1088/1674-1056/23/8/087305
Mi Min-Han
Zhang Kai
Chen Xing
Zhao Sheng-Lei
Wang Chong
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
Chin. Phys. B. 2014, 23 (7):77304
doi: 10.1088/1674-1056/23/7/077304
Lei Xiao-Yi
Liu Hong-Xia
Zhang Yue
Ma Xiao-Hua
Hao Yue
Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET
Chin. Phys. B. 2014, 23 (5):57305
doi: 10.1088/1674-1056/23/5/057305
Zhang Yue
Zhuo Qing-Qing
Liu Hong-Xia
Ma Xiao-Hua
Hao Yue
Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
Chin. Phys. B. 2014, 23 (5):57304
doi: 10.1088/1674-1056/23/5/057304
Cao Meng-Yi
Zhang Kai
Chen Yong-He
Zhang Jin-Cheng
Ma Xiao-Hua
Hao Yue
High-efficiency S-band harmonic tuning GaN amplifier
Chin. Phys. B. 2014, 23 (3):37305
doi: 10.1088/1674-1056/23/3/037305
Liu Yu-An
Zhuang Yi-Qi
Ma Xiao-Hua
Du Ming
Bao Jun-Lin
Li Cong
A unified drain current 1/f noise model for GaN-based high electron mobility transistors
Chin. Phys. B. 2014, 23 (2):20701
doi: 10.1088/1674-1056/23/2/020701
Muhammad Riaz
Muhammad Rehan
Muhammad Ashraf
Meng Lin
Mani Shankar Mandal
Mao Ai-Jie
Mi Guang-Bao
Ma Wei-Qing
Meng Xiang-Fu
Miao Yu-Run
Mao De-Feng
Mi Yuan-Yuan
Meng Ju
M. Shafiq
M. S. Shah
M. S. Abbas
Mai Zhi-Jie
Mohsen Cheragizade
M. R. Mahmoudian
Mao Tian-Hua
Mi Min-Han
Ma Jian
Ma Yong-Mei
Muhammad Zafar
M. Shakil
M. A. Choudhary
M. A. Khan
Man Mohan
Meng Qing-Tian
Mostafa A. A. Mahmoud
Mohammad Reza Bazrafkan
M. Cvetinov
M. Stojanović
M. V. Satarić
Mo Jia-Qi
Ma Yan
Ma Rui
Ma Yan-Xing
Ma Zheng-Zheng
Mu Quan-Quan
Meng Shao-Ying
Ma Song-Ya
Masatsugu Taneda
Ma Ping
Ma Xiao-Juan
Ma Hai-Xia
M. F. Pantoja
Ma Yue
M. Asghar
M. A. Hasan
M. Willder
M. K. Alqadi
M. Mustafa
Ma Hong
Ma Yan-Feng
Melanie Larisika
Myra A. Nimmo
Ma Xiao
Ma Juan
Ma Liu-Hong
Ma Song
Ma Wei
Meng Sheng
Magundappa L. Hadimani
Ma Ting-Huai
Mei Liang-Mo
Mao Wei
Ma Qiang
mü
Meng Xiang-Jia
Mu Wen-Ying
Ma Guo-Hong
Meng Yue-Dong
M K Tavassoly
M Temiz
Ma Xiu-Rong
Mu Kuan-Lin
Ma Song-Hua
Ma Zheng-Yi
Meng Wen
Ma Guo-Jia
Ma Yan-Mei
Ma Yan-Bing
M. S. Alhuthali
M. Imtiaz
M. Bagheri Tagani
Ma Jun-Jie
Ma Shuang-Yun
Mo Zhao-Jun
Meng Yun-He
Marí
Ma Chen-Shuo
Men Chuan-Ling
Man Chao
Merlitz Holger
Meng Kuo
Meng Qing-Bo
M. Saadeldin
Mo Man-Man
Mahmoud Samadpour
Mehdi Molaei
Ma He
Ma Fang
Meng Xiang-Feng
Miao Bing-Feng
Ming Xing
M. Karimi
Ma Yan-Wei
Meng Ke-Ke
Mohammad Naghi Azarmanesh
Md. Nur Alam
Md. Ali Akbar
Ma Lei
Ma Xin
ManMohan
Ma Xing-Qiao
Miao Qing
msettin Altindal
Ma Mao-Fen
Muhammad Asif Zahoor Raja
Musarrat Jabeen
Muhammad Azhar Iqbal
Mansoor Ahmed
Muhammad Tayyeb Javed
Meng Chang-Gong
Muhammad Rashid
Muhammad Imran
Mokhtaria Drissi
Ma Jie
Mo Zhi-Wen
Ma Zhong-Jun
Ma Yi-An
Meng Xiang-Xu
Miao Qian
Mu Qiang