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Chin. Phys. B, 2014, Vol. 23(6): 068801    DOI: 10.1088/1674-1056/23/6/068801
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Yang Jinga, Zhao De-Ganga, Jiang De-Shenga, Liu Zong-Shuna, Chen Pinga, Li Lianga, Wu Liang-Lianga, Le Ling-Conga, Li Xiao-Jinga, He Xiao-Guangb, Wang Huib, Zhu Jian-Junb, Zhang Shu-Mingb, Zhang Bao-Shunb, Yang Huia b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract  Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well (MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency (EQE) of the solar cells increases in a low energy spectral range (λ >370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths (λ >370 nm).
Keywords:  nitride materials      external quantum efficiency      polarization      p-type GaN resistivity  
Received:  27 August 2013      Revised:  09 November 2013      Published:  15 June 2014
PACS:  88.40.hj (Efficiency and performance of solar cells)  
  81.05.Ea (III-V semiconductors)  
  78.40.Fy (Semiconductors)  
Fund: Project supported by the National Natural Science Fundation for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 61223005, 10990100, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-Discipline Foundation, China.
Corresponding Authors:  Zhao De-Gang     E-mail:  dgzhao@red.semi.ac.cn

Cite this article: 

Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Hui Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 2014 Chin. Phys. B 23 068801

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