Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

doi:10.1088/1674-1056/23/6/068801

Abstract Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well (MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency (EQE) of the solar cells increases in a low energy spectral range (λ >370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths (λ >370 nm).

Keywords: nitride materials external quantum efficiency polarization p-type GaN resistivity

Received: 27 August 2013
Revised: 09 November 2013
Accepted manuscript online:

PACS:	88.40.hj	(Efficiency and performance of solar cells)
	81.05.Ea	(III-V semiconductors)
	78.40.Fy	(Semiconductors)

Fund: Project supported by the National Natural Science Fundation for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 61223005, 10990100, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-Discipline Foundation, China.

Corresponding Authors: Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn

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Yang Jing (杨静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Li Liang (李亮), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Li Xiao-Jing (李晓静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉) Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 2014 Chin. Phys. B 23 068801

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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

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