β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells：A numerical study
Yuan Ji-Ren (袁吉仁)a b c, Shen Hong-Lie (沈鸿烈)b, Zhou Lang (周浪)a, Huang Hai-Bin (黄海宾)a, Zhou Nai-Gen (周耐根)a, Deng Xin-Hua (邓新华)c, Yu Qi-Ming (余启名)c
a School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China;
b College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
c School of Science, Nanchang University, Nanchang 330031, China
Abstract Using β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the β-FeSi2 subcell can contribute 0.273 V of open-circuit voltage to the a-Si/μc-Si/β-FeSi2 triple-junction thin-film solar cell. The optimized absorber thicknesses for a-Si, μc-Si, and β-FeSi2 subcells are 260 nm, 900 nm, and 40 nm, respectively. In addition, the temperature coefficient of the conversion efficiency of the a-Si/μc-Si/β-FeSi2 cell is -0.308 %/K, whose absolute value is only greater than that of the a-Si subcell. This result indicates that the a-Si/μc-Si/β-FeSi2 triple-junction solar cell has a good temperature coefficient. As a result, using β-FeSi2 as the bottom absorber can improve the thin-film solar cell performance, and the a-Si/μc-Si/β-FeSi2 triple-junction solar cell is a promising structure configuration for improving the solar cell efficiency.
Received: 22 October 2013
Revised: 27 November 2013
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176062, 61306084, and 51361022), the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, the Ph. D Program Foundation of Ministry of Education of China (Grant No. 20113601120006), the Natural Science Foundation of Jiangxi Province, China (Grant No. 20122BAB202002), and the Science and Technology Project of Education Department of Jiangxi Province, China (Grant No. GJJ13010).
Yuan Ji-Ren (袁吉仁), Shen Hong-Lie (沈鸿烈), Zhou Lang (周浪), Huang Hai-Bin (黄海宾), Zhou Nai-Gen (周耐根), Deng Xin-Hua (邓新华), Yu Qi-Ming (余启名) β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells：A numerical study 2014 Chin. Phys. B 23 038801
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