A nonpolar SiC(11
0) substrate has been used to fabricate epitaxial graphene (EG). Two EGs with layer numbers of 8-10 (referred to as MLG) and 2-3 (referred to as FLG) were used as representative to study the substrate effect on EG through temperature dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of a free graphene predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate (-0.016 cm
-1/K) is almost one third of that (-0.043 cm
-1/K) of a EG on 6H-SiC (0001) in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC (11
0) on the FLG. This renders the FLG a high mobility around 1812 cm
2- ·V
-1·s
-1 at room temperature even with a very high carrier concentration about 2.95× 10
13 cm
-2 (p-type). These suggest SiC (11
0) is more suitable for fabricating EG with high performance.