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Chin. Phys. B, 2013, Vol. 22(1): 018503    DOI: 10.1088/1674-1056/22/1/018503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Mechanism of amorphous Ge2Sb2Te5 removal during chemical mechanical planarization in acidic H2O2 slurry

He Ao-Dong (何敖东)a b, Song Zhi-Tang (宋志棠)a, Liu Bo (刘波)a, Zhong Min (钟旻)a, Wang Liang-Yong (王良咏)a, Lü Ye-Gang (吕业刚)a b, Feng Song-Lin (封松林)a
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  In this paper, chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but static etch rate firstly increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.
Keywords:  H2O2      chemical mechanical planarization      Ge2Sb2Te5  
Received:  03 May 2012      Revised:  27 June 2012      Accepted manuscript online: 
PACS:  85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)  
  81.65.-b (Surface treatments)  
  52.77.Bn (Etching and cleaning)  
  81.65.Cf (Surface cleaning, etching, patterning)  
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800), and the Chinese Academy of Sciences (Grant No. 20110490761).
Corresponding Authors:  Liu Bo     E-mail:  liubo@mail.sim.ac.cn

Cite this article: 

He Ao-Dong (何敖东), Song Zhi-Tang (宋志棠), Liu Bo (刘波), Zhong Min (钟旻), Wang Liang-Yong (王良咏), Lü Ye-Gang (吕业刚), Feng Song-Lin (封松林) Mechanism of amorphous Ge2Sb2Te5 removal during chemical mechanical planarization in acidic H2O2 slurry 2013 Chin. Phys. B 22 018503

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