Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

doi:10.1088/1674-1056/22/1/017301

Abstract A model based on analysis of self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor (MOS) structure. In this model, the influences of interface trap charge (ITC) at the Si-SiO₂ interface and fixed oxide charge (FOC) in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO₂ interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than 10¹² cm^-2, which results from the great change of bound electrons near the Si-SiO₂ interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for tunneling current in the inversion layer.

Keywords: tunneling current ultrathin oxide interface trap charge fixed oxide charge

Received: 09 June 2012
Revised: 09 July 2012
Accepted manuscript online:

PACS:	73.40.Jn	(Metal-to-metal contacts)
	73.50.-h	(Electronic transport phenomena in thin films)
	61.72.-y	(Defects and impurities in crystals; microstructure)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Program for Innovative Research Team of Zhejiang Normal University of China (Grant No. 2007XCXTD-5), and the Open Program of Surface Physics Laboratory of Fudan University, China (Grant No. FDS KL2011_04).

Corresponding Authors: Huang Shi-Hua
E-mail: huangshihua@zjnu.cn

Cite this article:

Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民) Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge 2013 Chin. Phys. B 22 017301

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Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

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