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Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell |
Zhang Lei (张磊)a, Shen Hong-Lie (沈鸿烈)a b, Yue Zhi-Hao (岳之浩)a, Jiang Feng (江丰)a, Wu Tian-Ru (吴天如)a, Pan Yuan-Yuan (潘园园)a |
a College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; b Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China |
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Abstract A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.
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Received: 15 May 2012
Revised: 11 June 2012
Accepted manuscript online:
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PACS:
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68.55.aj
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(Insulators)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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88.40.jj
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(Silicon solar cells)
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Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z219), the Jiangsu Innovation Program for Graduate Education, China (Grant No. CXZZ11_0206), and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China. |
Corresponding Authors:
Shen Hong-Lie
E-mail: hlshen@nuaa.edu.cn
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Cite this article:
Zhang Lei (张磊), Shen Hong-Lie (沈鸿烈), Yue Zhi-Hao (岳之浩), Jiang Feng (江丰), Wu Tian-Ru (吴天如), Pan Yuan-Yuan (潘园园) Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell 2013 Chin. Phys. B 22 016803
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