Enhancing UV photosensitivity of ZnO UV nanosensor using electrical stimulation at megahertz frequency

doi:10.1088/1674-1056/22/1/018502

Abstract We report a novel technique to enhance the ultraviolent (UV) photosensitivity of ZnO nanosensor with ZnO nanowires bridged on micromachined metallic electrodes. The experimental results reveal that the photoconductivity and the time response of the ZnO nanowire sensor with either Schottky or Ohmic contacts are significantly improved by electrifying the nanowire sensors using an alternating current at the frequency of megahertz. An integrated UV sensor incorporating ZnO nanowires with a constant current mode driving circuit is developed, which demonstrates promising sensitivity and time response to UV illumination with a low power consumption.

Keywords: UV nanosensor photosensitivity ZnO nanowires electrical stimulation

Received: 17 February 2012
Revised: 28 August 2012
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	62.23.Hj	(Nanowires)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 91123017).

Corresponding Authors: Zhu Rong
E-mail: rong_zhu@263.net

Cite this article:

Li De-Zhao (李德钊), Zhu Rong (朱荣) Enhancing UV photosensitivity of ZnO UV nanosensor using electrical stimulation at megahertz frequency 2013 Chin. Phys. B 22 018502

[1]	Jiang W, Gao H, Xu L L, Ma J N, Zhang E, Wei P and Lin J Q 2011 Chin. Phys. B 20 037307
[2]	Li J F, Yao L Z, Cai W L and Mo J M 2001 Acta Phys. Sin. 50 1623 (in Chinese)
[3]	Peng L P, Fang L, Wu W D, Wang X M and Li L 2012 Chin. Phys. B 21 047305
[4]	Sun H, Zhang Q F and Wu J L 2006 Acta Phys. Sin. 56 3479 (in Chinese)
[5]	Bai H L, Liu G L, He S M, Yan S S, Zhu D P, Guo H Y, Ji Z W, Yang F F, Chen Y X and Mei L M 2012 Chin. Phys. B 21 057801
[6]	Wang Z L 2004 Condensed Matter Physics 16 R829
[7]	Muhammad H A, Syed M U A, Omer N and Magnus W 2010 Biosens. Bioelectron. 26 1118
[8]	Hyun K K, Woojin S and Tae J A 2009 IEEE. Photonic. Tech. Lett. 22 1404
[9]	Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M and Guo Z 2011 Acta Phys. Sin. 60 107307 (in Chinese)
[10]	Wan Q, Li Q H and Wang T H 2004 Appl. Phys. Lett. 84 3654
[11]	Sachindra N D, Kyeong J M, Jyoti P K, Ji H C, Junjie X, Tae I L and Jae M M 2010 Appl. Phys. Lett. 97 22103
[12]	Lao C S, Park M C, Qin K, Deng Y, Sood A K, Dennis L P and Wang Z L 2007 J. Am. Chem. Soc. 129 12096
[13]	Jiang W, Gao H, Xu L L, Ma, J N, Zhang E, Wei P and Lin J Q 2011 Chin. Phys. B 20 37307
[14]	Ren S T, Wang Q, Zhao F and Qu S L 2012 Chin. Phys. B 20 38104
[15]	Reemts J and Kittel A 2007 J. Appl. Phys. 101 13709
[16]	Kind H, Yan H, Messer B, Law M and Yang P 2002 Adv. Mater. 14 158
[17]	Jiang D, Zhang J, Lu Y, Liu K, Zhao D, Zhang Z, Shen D and Fan X 2008 Solid-State Electron. 52 679
[18]	Li Y, Paulsen A, Yamada I, Kiode Y and Delaunay J J 2010 Nanotechnology 21 295502
[19]	Zhou J, Gu Y D, Hu Y F, Msi W J, Yeh P H, Bao G, Sood A K, Polla D L and Wang Z L 2009 Appl. Phys. Lett. 94 191103
[20]	Shiva H, Nilima H, David L and Bruce C 2009 Nano. Res. 4 1421
[21]	Wu J M, Fang C, Fang C, Lee L, Yeh H H, Lin Y H, Yeh P H, Tsai L N and Lin 2010 J. Electrochem. Soc. K6 158
[22]	Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao Y H and Wang D 2007 Nano Lett. 7 1003
[23]	Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z and Shen D Z 2012 Acta Phys. Sin. 61 52901 (in Chinese)
[24]	Kim J, Yun J, Chang H K, Yun C P, Woo J Y, Jeunghee P, Lee J, Yi J and Han C 2010 Nanotechnology 21 115205
[25]	Wang D Q, Zhou Z Y, Zhu R and Ye X Y 2008 Chin. Phys. B 17 3875
[26]	Jiang F and Zhang J 2011 Appl. Phys. Lett. 98 181912
[27]	Wang D Q, Zhu R, Zhou Z Y and Ye X Y 2007 Appl. Phys. Lett. 90 103110
[28]	Neaman D A 2006 An Introduction to Semiconductor Devices (New York: McGraw-Hill)

[1]	Emerging of Ag particles on ZnO nanowire arrays for blue-ray hologram storage Ning Li(李宁), Xin Li(李鑫), Ming-Yue Zhang(张明越), Jing-Ying Miao(苗景迎), Shen-Cheng Fu(付申成), and Xin-Tong Zhang(张昕彤). Chin. Phys. B, 2022, 31(3): 036101.
[2]	Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure Miao-Ling Que(阙妙玲), Xian-Di Wang(王贤迪), Yi-Yao Peng(彭轶瑶), Cao-Feng Pan(潘曹峰). Chin. Phys. B, 2017, 26(6): 067301.
[3]	Reduction of defect-induced ferromagnetic stability in passivated ZnO nanowires Wu Fang (吴芳), Meng Pei-Wen (孟培雯), Luo Kang (罗康), Liu Yun-Fei (刘云飞), Kan Er-Jun (阚二军). Chin. Phys. B, 2015, 24(3): 037504.
[4]	Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films Pan Yue-Wu (潘跃武), Ren Shou-Tian (任守田), Qu Shi-Liang (曲士良), Wang Qiang (王强). Chin. Phys. B, 2013, 22(11): 118102.
[5]	High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene) Liu Yu-Rong (刘玉荣), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河 ). Chin. Phys. B, 2012, 21(8): 088503.
[6]	Slow-rise and fast-drop current feature of ultraviolet response spectra for ZnO-nanowire film modulated by water molecules Ren Shou-Tian(任守田), Wang Qiang(王强), Zhao Feng (赵锋), and Qu Shi-Liang(曲士良) . Chin. Phys. B, 2012, 21(3): 038104.
[7]	First-principles study of the electronic and optical properties of ZnO nanowires Zhang Fu-Chun(张富春), Zhang Zhi-Yong(张志勇), Zhang Wei-Hu(张威虎) Yan Jun-Feng(阎军峰), and Yong Jiang-Ni(贠江妮). Chin. Phys. B, 2009, 18(6): 2508-2513.
[8]	The influence of K₄Fe(CN)₆ on the photosensitivity of cubic AgCl microcrystal Li Xiao-Wei (李晓苇), Liu Rong-Juan (刘荣鹃), Geng Ai-Cong (耿爱丛), Yang Shao-Peng (杨少鹏), Fu Guang-Sheng (傅广生). Chin. Phys. B, 2005, 14(2): 404-408.
[9]	Study on stability of hydrogenated amorphous silicon films Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Zhang Wen-Li (张文理), Ding Yi (丁毅), Ma Zhan-Jie (马占洁), Hu Yue-Hui (胡跃辉), He Bin (何斌), Rong Yan-Dong (荣延栋). Chin. Phys. B, 2005, 14(11): 2348-2351.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Enhancing UV photosensitivity of ZnO UV nanosensor using electrical stimulation at megahertz frequency

Cite this article:

Online attention