|
|
Other articles related with "MOSFET"：
|
|
118502 |
Jin-Ping Zhang(张金平), Wei Chen(陈伟), Zi-Xun Chen(陈子珣), and Bo Zhang(张波) |
| |
|
SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability |
| |
|
|
Chin. Phys. B
2023 Vol.32 (11): 118502-118502
[Abstract]
(104)
[HTML 0 KB]
[PDF 947 KB]
(47)
|
|
|
108503 |
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Zhi-Feng Lei(雷志锋), Chao Peng(彭超), Wu-Ying Ma(马武英), Di Wang(王迪), Chang-Hao Sun(孙常皓), Feng-Qi Zhang(张凤祁), Zhan-Gang Zhang(张战刚), Ye Yang(杨业), Wei Lv(吕伟), Zhong-Ming Wang(王忠明), Xiang-Li Zhong(钟向丽), and Xiao-Ping Ouyang(欧阳晓平) |
| |
|
Proton induced radiation effect of SiC MOSFET under different bias |
| |
|
|
Chin. Phys. B
2023 Vol.32 (10): 108503-108503
[Abstract]
(91)
[HTML 0 KB]
[PDF 1463 KB]
(20)
|
|
|
98501 |
Yi-Fan Li(李逸帆), Tao Ni(倪涛), Xiao-Jing Li(李晓静), Juan-Juan Wang(王娟娟), Lin-Chun Gao(高林春), Jian-Hui Bu(卜建辉), Duo-Li Li(李多力), Xiao-Wu Cai(蔡小五), Li-Da Xu(许立达), Xue-Qin Li(李雪勤), Run-Jian Wang(王润坚), Chuan-Bin Zeng(曾传滨), Bo Li(李博), Fa-Zhan Zhao(赵发展), Jia-Jun Luo(罗家俊), and Zheng-Sheng Han(韩郑生) |
| |
|
Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process |
| |
|
|
Chin. Phys. B
2023 Vol.32 (9): 98501-098501
[Abstract]
(118)
[HTML 0 KB]
[PDF 2406 KB]
(21)
|
|
|
68502 |
Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄) |
| |
|
Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs |
| |
|
|
Chin. Phys. B
2023 Vol.32 (6): 68502-068502
[Abstract]
(172)
[HTML 0 KB]
[PDF 1436 KB]
(78)
|
|
|
67303 |
Weizhong Chen(陈伟中), Liuting Mou(牟柳亭), Haifeng Qin(秦海峰), Hongsheng Zhang(张红升), and Zhengsheng Han(韩郑生) |
| |
|
An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics |
| |
|
|
Chin. Phys. B
2023 Vol.32 (6): 67303-067303
[Abstract]
(212)
[HTML 0 KB]
[PDF 1840 KB]
(176)
|
|
|
58501 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), and Fei Cao(曹菲) |
| |
|
Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar |
| |
|
|
Chin. Phys. B
2023 Vol.32 (5): 58501-058501
[Abstract]
(191)
[HTML 0 KB]
[PDF 2419 KB]
(82)
|
|
|
58504 |
Kaizhe Jiang(蒋铠哲), Xiaodong Zhang(张孝冬), Chuan Tian(田川), Shengrong Zhang(张升荣),Liqiang Zheng(郑理强), Rongzhao He(赫荣钊), and Chong Shen(沈重) |
| |
|
A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode |
| |
|
|
Chin. Phys. B
2023 Vol.32 (5): 58504-058504
[Abstract]
(179)
[HTML 1 KB]
[PDF 1406 KB]
(266)
|
|
|
57305 |
Wen-Hao Zhang(张文浩), Ma-Guang Zhu(朱马光), Kang-Hua Yu(余康华), Cheng-Zhan Li(李诚瞻),Jun Wang(王俊), Li Xiang(向立), and Yu-Wei Wang(王雨薇) |
| |
|
Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms |
| |
|
|
Chin. Phys. B
2023 Vol.32 (5): 57305-057305
[Abstract]
(168)
[HTML 1 KB]
[PDF 917 KB]
(185)
|
|
|
37302 |
Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需) |
| |
|
Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor |
| |
|
|
Chin. Phys. B
2023 Vol.32 (3): 37302-037302
[Abstract]
(284)
[HTML 1 KB]
[PDF 867 KB]
(231)
|
|
|
28504 |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平) |
| |
|
Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation |
| |
|
|
Chin. Phys. B
2023 Vol.32 (2): 28504-028504
[Abstract]
(265)
[HTML 1 KB]
[PDF 1582 KB]
(101)
|
|
|
28503 |
Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏) |
| |
|
High performance SiC trench-type MOSFET with an integrated MOS-channel diode |
| |
|
|
Chin. Phys. B
2023 Vol.32 (2): 28503-028503
[Abstract]
(331)
[HTML 0 KB]
[PDF 1793 KB]
(301)
|
|
|
98502 |
Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇) |
| |
|
Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure |
| |
|
|
Chin. Phys. B
2022 Vol.31 (9): 98502-098502
[Abstract]
(303)
[HTML 0 KB]
[PDF 1544 KB]
(151)
|
|
|
97303 |
Chenkai Zhu(朱晨凯), Linna Zhao(赵琳娜), Zhuo Yang(杨卓), and Xiaofeng Gu(顾晓峰) |
| |
|
Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress |
| |
|
|
Chin. Phys. B
2022 Vol.31 (9): 97303-097303
[Abstract]
(316)
[HTML 0 KB]
[PDF 3307 KB]
(83)
|
|
|
97401 |
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬) |
| |
|
Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique |
| |
|
|
Chin. Phys. B
2022 Vol.31 (9): 97401-097401
[Abstract]
(317)
[HTML 0 KB]
[PDF 1088 KB]
(87)
|
|
|
78501 |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲) |
| |
|
A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance |
| |
|
|
Chin. Phys. B
2022 Vol.31 (7): 78501-078501
[Abstract]
(389)
[HTML 1 KB]
[PDF 1551 KB]
(133)
|
|
|
18504 |
Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读) |
| |
|
A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode |
| |
|
|
Chin. Phys. B
2022 Vol.31 (1): 18504-018504
[Abstract]
(475)
[HTML 1 KB]
[PDF 733 KB]
(194)
|
|
|
18501 |
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平) |
| |
|
Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET |
| |
|
|
Chin. Phys. B
2022 Vol.31 (1): 18501-018501
[Abstract]
(544)
[HTML 0 KB]
[PDF 2029 KB]
(161)
|
|
|
87305 |
Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
| |
|
Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure |
| |
|
|
Chin. Phys. B
2021 Vol.30 (8): 87305-087305
[Abstract]
(492)
[HTML 1 KB]
[PDF 830 KB]
(158)
|
|
|
67303 |
Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰) |
| |
|
Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness |
| |
|
|
Chin. Phys. B
2021 Vol.30 (6): 67303-067303
[Abstract]
(471)
[HTML 0 KB]
[PDF 1025 KB]
(111)
|
|
|
58101 |
Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭) |
| |
|
Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature |
| |
|
|
Chin. Phys. B
2021 Vol.30 (5): 58101-058101
[Abstract]
(552)
[HTML 1 KB]
[PDF 1096 KB]
(97)
|
|
|
58502 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲) |
| |
|
Improved 4H-SiC UMOSFET with super-junction shield region |
| |
|
|
Chin. Phys. B
2021 Vol.30 (5): 58502-058502
[Abstract]
(540)
[HTML 1 KB]
[PDF 1030 KB]
(169)
|
|
|
48504 |
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) |
| |
|
Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
| |
|
|
Chin. Phys. B
2021 Vol.30 (4): 48504-
[Abstract]
(439)
[HTML 1 KB]
[PDF 790 KB]
(149)
|
|
|
37301 |
Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯) |
| |
|
High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation |
| |
|
|
Chin. Phys. B
2020 Vol.29 (3): 37301-037301
[Abstract]
(766)
[HTML 1 KB]
[PDF 1104 KB]
(246)
|
|
|
38505 |
Xian-Le Zhang(张先乐), Peng-Ying Chang(常鹏鹰), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦) |
| |
|
Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs |
| |
|
|
Chin. Phys. B
2020 Vol.29 (3): 38505-038505
[Abstract]
(484)
[HTML 1 KB]
[PDF 667 KB]
(119)
|
|
|
58503 |
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) |
| |
|
Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation |
| |
|
|
Chin. Phys. B
2019 Vol.28 (5): 58503-058503
[Abstract]
(660)
[HTML 1 KB]
[PDF 1019 KB]
(212)
|
|
|
27201 |
Jun Wang(王军), Xiao-Mei Peng(彭小梅), Zhi-Jun Liu(刘志军), Lin Wang(王林), Zhen Luo(罗震), Dan-Dan Wang(王丹丹) |
| |
|
Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET |
| |
|
|
Chin. Phys. B
2018 Vol.27 (2): 27201-027201
[Abstract]
(781)
[HTML 0 KB]
[PDF 2011 KB]
(204)
|
|
|
127302 |
Yan-Bing Xu(徐雁冰), Hong-Guan Yang(杨红官) |
| |
|
Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors |
| |
|
|
Chin. Phys. B
2017 Vol.26 (12): 127302-127302
[Abstract]
(515)
[HTML 0 KB]
[PDF 886 KB]
(206)
|
|
|
98901 |
Norazlina M S, Dheepan Chakravarthii M K, Shanmugan S, Mutharasu D, Shahrom Mahmud |
| |
|
Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement |
| |
|
|
Chin. Phys. B
2017 Vol.26 (9): 98901-098901
[Abstract]
(538)
[HTML 1 KB]
[PDF 3119 KB]
(538)
|
|
|
88101 |
Wang Zhang(张望), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Qi-Feng Lv(吕奇峰), Xiang-Hai Ji(季祥海), Tao Yang(杨涛), Fu-Hua Yang(杨富华) |
| |
|
Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate |
| |
|
|
Chin. Phys. B
2017 Vol.26 (8): 88101-088101
[Abstract]
(582)
[HTML 1 KB]
[PDF 1726 KB]
(191)
|
|
|
47306 |
Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
| |
|
Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions |
| |
|
|
Chin. Phys. B
2017 Vol.26 (4): 47306-047306
[Abstract]
(766)
[HTML 1 KB]
[PDF 9012 KB]
(379)
|
|
|
108503 |
Shweta Tripathi |
| |
|
A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET |
| |
|
|
Chin. Phys. B
2016 Vol.25 (10): 108503-108503
[Abstract]
(581)
[HTML 1 KB]
[PDF 5433 KB]
(674)
|
|
|
38502 |
Yan-hui Xin(辛艳辉), Sheng Yuan(袁胜), Ming-tang Liu(刘明堂),Hong-xia Liu(刘红侠), He-cai Yuan(袁合才) |
| |
|
Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs |
| |
|
|
Chin. Phys. B
2016 Vol.25 (3): 38502-038502
[Abstract]
(677)
[HTML 1 KB]
[PDF 339 KB]
(303)
|
|
|
78502 |
Chen Hai-Feng (陈海峰), Guo Li-Xin (过立新), Zheng Pu-Yang (郑璞阳), Dong Zhao (董钊), Zhang Qian (张茜) |
| |
|
Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor |
| |
|
|
Chin. Phys. B
2015 Vol.24 (7): 78502-078502
[Abstract]
(730)
[HTML 1 KB]
[PDF 364 KB]
(302)
|
|
|
47302 |
Morteza Charmi |
| |
|
Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs |
| |
|
|
Chin. Phys. B
2015 Vol.24 (4): 47302-047302
[Abstract]
(631)
[HTML 0 KB]
[PDF 412 KB]
(404)
|
|
|
128502 |
Chen Hai-Feng (陈海峰) |
| |
|
Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor |
| |
|
|
Chin. Phys. B
2014 Vol.23 (12): 128502-128502
[Abstract]
(538)
[HTML 1 KB]
[PDF 368 KB]
(400)
|
|
|
118505 |
Shweta Tripathi |
| |
|
A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET |
| |
|
|
Chin. Phys. B
2014 Vol.23 (11): 118505-118505
[Abstract]
(615)
[HTML 1 KB]
[PDF 332 KB]
(433)
|
|
|
90702 |
Peng Chao (彭超), Hu Zhi-Yuan (胡志远), Ning Bing-Xu (宁冰旭), Huang Hui-Xiang (黄辉祥), Fan Shuang (樊双), Zhang Zheng-Xuan (张正选), Bi Da-Wei (毕大炜), En Yun-Fei (恩云飞) |
| |
|
Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs |
| |
|
|
Chin. Phys. B
2014 Vol.23 (9): 90702-090702
[Abstract]
(529)
[HTML 1 KB]
[PDF 531 KB]
(1018)
|
|
|
67701 |
Lin Meng (林猛), An Xia (安霞), Li Ming (黎明), Yun Quan-Xin (云全新), Li Min (李敏), Li Zhi-Qiang (李志强), Liu Peng-Qiang (刘朋强), Zhang Xing (张兴), Huang Ru (黄如) |
| |
|
Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application |
| |
|
|
Chin. Phys. B
2014 Vol.23 (6): 67701-067701
[Abstract]
(502)
[HTML 1 KB]
[PDF 410 KB]
(712)
|
|
|
57304 |
Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET |
| |
|
|
Chin. Phys. B
2014 Vol.23 (5): 57304-057304
[Abstract]
(535)
[HTML 1 KB]
[PDF 303 KB]
(388)
|
|
|
38503 |
Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基) |
| |
|
Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer |
| |
|
|
Chin. Phys. B
2014 Vol.23 (3): 38503-038503
[Abstract]
(519)
[HTML 1 KB]
[PDF 749 KB]
(611)
|
|
|
38502 |
Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚) |
| |
|
A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs |
| |
|
|
Chin. Phys. B
2014 Vol.23 (3): 38502-038502
[Abstract]
(477)
[HTML 1 KB]
[PDF 514 KB]
(491)
|
|
|
18501 |
Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚) |
| |
|
Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate |
| |
|
|
Chin. Phys. B
2014 Vol.23 (1): 18501-018501
[Abstract]
(544)
[HTML 1 KB]
[PDF 358 KB]
(552)
|
|
|
107302 |
Xue Bai-Qing (薛百清), Wang Sheng-Kai (王盛凯), Han Le (韩乐), Chang Hu-Dong (常虎东), Sun Bing (孙兵), Zhao Wei (赵威), Liu Hong-Gang (刘洪刚) |
| |
|
High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation |
| |
|
|
Chin. Phys. B
2013 Vol.22 (10): 107302-107302
[Abstract]
(540)
[HTML 1 KB]
[PDF 502 KB]
(578)
|
|
|
98502 |
Zahra Ahangari, Morteza Fathipour |
| |
|
Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET |
| |
|
|
Chin. Phys. B
2013 Vol.22 (9): 98502-098502
[Abstract]
(599)
[HTML 1 KB]
[PDF 838 KB]
(633)
|
|
|
47304 |
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Kai (张凯), Zhang Yue (张月), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET |
| |
|
|
Chin. Phys. B
2013 Vol.22 (4): 47304-047304
[Abstract]
(842)
[HTML 1 KB]
[PDF 320 KB]
(875)
|
|
|
27302 |
Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Han Ji-Sheng (韩吉胜), Philip Tanner, Sima Dimitrijev, Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Guo Hui (郭辉) |
| |
|
The fabrication and characterization of 4H SiC power UMOSFETs |
| |
|
|
Chin. Phys. B
2013 Vol.22 (2): 27302-027302
[Abstract]
(1085)
[HTML 1 KB]
[PDF 441 KB]
(1558)
|
|
|
28503 |
Wang Bin (王斌), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Zhang Yu-Ming (张玉明), Zhou Chun-Yu (周春宇), Wang Guan-Yu (王冠宇), Li Yu-Chen (李妤晨 ) |
| |
|
Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET |
| |
|
|
Chin. Phys. B
2013 Vol.22 (2): 28503-028503
[Abstract]
(801)
[HTML 1 KB]
[PDF 390 KB]
(1234)
|
|
|
27304 |
Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Gang-Yi (胡刚毅), Wang Xiao-Wei (王骁玮), Zhang Zheng-Yuan (张正元), Fan Yuan-Hang (范远航), Cai Jin-Yong (蔡金勇), Wang Pei (王沛), Zhou Kun (周坤) |
| |
|
A low specific on-resistance SOI MOSFET with dual gates and recessed drain |
| |
|
|
Chin. Phys. B
2013 Vol.22 (2): 27304-027304
[Abstract]
(873)
[HTML 1 KB]
[PDF 684 KB]
(737)
|
|
|
118501 |
Zhao Kai (赵凯), Christoph Jungemann, Liu Xiao-Yan (刘晓彦 ) |
| |
|
Deterministic method study of the impact of the Pauli Principle in double-gate MOSFETs |
| |
|
|
Chin. Phys. B
2012 Vol.21 (11): 118501-118501
[Abstract]
(1071)
[HTML 1 KB]
[PDF 274 KB]
(473)
|
|
|
68503 |
Wang Ying(王颖), Lan Hao(兰昊), Cao Fei(曹菲), Liu Yun-Tao(刘云涛), and Shao Lei(邵雷) |
| |
|
A novel power UMOSFET with a variable K dielectric layer |
| |
|
|
Chin. Phys. B
2012 Vol.21 (6): 68503-068503
[Abstract]
(1457)
[HTML 1 KB]
[PDF 552 KB]
(797)
|
|
|
57305 |
Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌) |
| |
|
The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics |
| |
|
|
Chin. Phys. B
2012 Vol.21 (5): 57305-057305
[Abstract]
(1518)
[HTML 1 KB]
[PDF 245 KB]
(1084)
|
|
|
48502 |
Ren Min(任敏), Li Ze-Hong(李泽宏), Deng Guang-Min(邓光敏), Zhang Ling-Xia(张灵霞), Zhang Meng(张蒙), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), and Zhang Bo(张波) |
| |
|
A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching |
| |
|
|
Chin. Phys. B
2012 Vol.21 (4): 48502-048502
[Abstract]
(1521)
[HTML 1 KB]
[PDF 470 KB]
(2610)
|
|
|
97304 |
Zhou Xing-Ye(周幸叶), Zhang Jian(张健), Zhou Zhi-Ze(周致赜), Zhang Li-Ning(张立宁), Ma Chen-Yue(马晨月), Wu Wen(吴文), Zhao Wei(赵巍), and Zhang Xing(张兴) |
| |
|
An improvement to computational efficiency of the drain current model for double-gate MOSFET |
| |
|
|
Chin. Phys. B
2011 Vol.20 (9): 97304-097304
[Abstract]
(1477)
[HTML 1 KB]
[PDF 371 KB]
(939)
|
|
|
114220 |
Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰) |
| |
|
Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs |
| |
|
|
Chin. Phys. B
2011 Vol.20 (11): 114220-114220
[Abstract]
(1240)
[HTML 0 KB]
[PDF 3380 KB]
(714)
|
|
|
17301 |
Liu Hong-Xia(刘红侠), Li Jin(李劲),Li Bin(李斌), Cao Lei(曹磊),and Yuan Bo(袁博) |
| |
|
Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs |
| |
|
|
Chin. Phys. B
2011 Vol.20 (1): 17301-017301
[Abstract]
(1586)
[HTML 0 KB]
[PDF 935 KB]
(1320)
|
|
|
16102 |
He Jin(何进), Liu Feng(刘峰), Zhou Xing-Ye(周幸叶), Zhang Jian(张健), and Zhang Li-Ning(张立宁) |
| |
|
A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region |
| |
|
|
Chin. Phys. B
2011 Vol.20 (1): 16102-016102
[Abstract]
(1646)
[HTML 1 KB]
[PDF 589 KB]
(1350)
|
|
|
97306 |
Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Tian Wen-Chao(田文超) |
| |
|
The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors |
| |
|
|
Chin. Phys. B
2010 Vol.19 (9): 97306-097306
[Abstract]
(1592)
[HTML 1 KB]
[PDF 785 KB]
(747)
|
|
|
67304 |
Zhang Jian(张健), He Jin(何进), and Zhang Li-Ning(张立宁) |
| |
|
One-dimensional continuous analytic potential solution to generic oxide－silicon－oxide system |
| |
|
|
Chin. Phys. B
2010 Vol.19 (6): 67304-067304
[Abstract]
(1645)
[HTML 1 KB]
[PDF 367 KB]
(669)
|
|
|
57304 |
Du Gang(杜刚), Liu Xiao-Yan(刘晓彦), Xia Zhi-Liang(夏志良), Yang Jing-Feng(杨竞峰), and Han Ru-Qi(韩汝琦) |
| |
|
Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method |
| |
|
|
Chin. Phys. B
2010 Vol.19 (5): 57304-057304
[Abstract]
(1469)
[HTML 1 KB]
[PDF 289 KB]
(655)
|
|
|
47306 |
Zhang Li-Ning(张立宁), He Jin(何进), Zhou Wang(周旺), Chen Lin(陈林), and Xu Yi-Wen(徐艺文) |
| |
|
An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor |
| |
|
|
Chin. Phys. B
2010 Vol.19 (4): 47306-47306
[Abstract]
(1488)
[HTML 0 KB]
[PDF 687 KB]
(1012)
|
|
|
47204 |
Tang Xiao-Yan(汤晓燕), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门) |
| |
|
Study of a 4H－SiC epitaxial n-channel MOSFET |
| |
|
|
Chin. Phys. B
2010 Vol.19 (4): 47204-047204
[Abstract]
(1414)
[HTML 1 KB]
[PDF 115 KB]
(753)
|
|
|
37201 |
Ma Zhong-Fa(马中发), Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊) |
| |
|
Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs |
| |
|
|
Chin. Phys. B
2010 Vol.19 (3): 37201-037201
[Abstract]
(1748)
[HTML 1 KB]
[PDF 345 KB]
(954)
|
|
|
117309 |
Qin Shan-Shan(秦珊珊), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), Xuan Rong-Xi(宣荣喜), and Shu Bin(舒斌) |
| |
|
An analytical threshold voltage model for dual-strained channel PMOSFET |
| |
|
|
Chin. Phys. B
2010 Vol.19 (11): 117309-117309
[Abstract]
(1204)
[HTML 0 KB]
[PDF 694 KB]
(882)
|
|
|
107302 |
Li Jin(李劲), Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博) |
| |
|
Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs |
| |
|
|
Chin. Phys. B
2010 Vol.19 (10): 107302-107302
[Abstract]
(1390)
[HTML 1 KB]
[PDF 754 KB]
(1039)
|
|
|
107301 |
Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博) |
| |
|
The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs |
| |
|
|
Chin. Phys. B
2010 Vol.19 (10): 107301-107301
[Abstract]
(1365)
[HTML 1 KB]
[PDF 873 KB]
(704)
|
|
|
1231 |
Wang Cai-Lin(王彩琳) and Sun Jun(孙军) |
| |
|
An oxide filled extended trench gate super junction MOSFET structure |
| |
|
|
Chin. Phys. B
2009 Vol.18 (3): 1231-1236
[Abstract]
(1301)
[HTML 1 KB]
[PDF 788 KB]
(2069)
|
|
|
685 |
Hou Xiao-Yu(侯晓宇), Huang Ru(黄如), Chen Gang(陈刚), Liu Sheng(刘晟), Zhang Xing(张兴), Yu Bin(俞滨), and Wang Yang-Yuan(王阳元) |
| |
|
A novel 10-nm physical gate length double-gate junction field effect transistor |
| |
|
|
Chin. Phys. B
2008 Vol.17 (2): 685-689
[Abstract]
(1492)
[HTML 1 KB]
[PDF 1132 KB]
(566)
|
|
|
4312 |
Li Zun-Chao (李尊朝) |
| |
|
Performance and analytical modelling of halo-doped surrounding gate MOSFETs |
| |
|
|
Chin. Phys. B
2008 Vol.17 (11): 4312-4317
[Abstract]
(1368)
[HTML 1 KB]
[PDF 1287 KB]
(633)
|
|
|
2111 |
Liu Hong-Xia (刘红侠) and Hao Yue (郝跃) |
| |
|
Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs) |
| |
|
|
Chin. Phys. B
2007 Vol.16 (7): 2111-2115
[Abstract]
(1555)
[HTML 1 KB]
[PDF 462 KB]
(879)
|
|
|
1757 |
Ji Feng (季峰), Xu Jing-Ping(徐静平), and Lai Pui-To (黎沛涛) |
| |
|
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect |
| |
|
|
Chin. Phys. B
2007 Vol.16 (6): 1757-1763
[Abstract]
(1347)
[HTML 1 KB]
[PDF 509 KB]
(592)
|
|
|
1743 |
Tian Yu(田豫), Huang Ru(黄如), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元) |
| |
|
Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs |
| |
|
|
Chin. Phys. B
2007 Vol.16 (6): 1743-1747
[Abstract]
(1512)
[HTML 0 KB]
[PDF 509 KB]
(573)
|
|
|
1445 |
Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃) |
| |
|
Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress |
| |
|
|
Chin. Phys. B
2007 Vol.16 (5): 1445-1449
[Abstract]
(1444)
[HTML 1 KB]
[PDF 458 KB]
(833)
|
|
|
3820 |
Zhang Xue-Feng(张雪锋), Xu Jing-Ping (徐静平), Lai Pui-To(黎沛涛), Li Chun-Xia(李春霞), and Guan Jian-Guo(官建国) |
| |
|
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack |
| |
|
|
Chin. Phys. B
2007 Vol.16 (12): 3820-3826
[Abstract]
(1351)
[HTML 1 KB]
[PDF 785 KB]
(670)
|
|
|
240 |
Li Ding-Yu(李定宇), Sun Lei(孙雷), Zhang Sheng-Dong (张盛东), Wang Yi(王漪), Liu Xiao-Yan(刘晓彦), and Han Ru-Qi(韩汝琦) |
| |
|
Schottky barrier MOSFET structure with silicide source/drain on buried metal |
| |
|
|
Chin. Phys. B
2007 Vol.16 (1): 240-244
[Abstract]
(1876)
[HTML 1 KB]
[PDF 387 KB]
(625)
|
|
|
1339 |
Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英) |
| |
|
Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel |
| |
|
|
Chin. Phys. B
2006 Vol.15 (6): 1339-1345
[Abstract]
(1806)
[HTML 0 KB]
[PDF 294 KB]
(654)
|
|
|
631 |
Zhang Xiao-Ju (张晓菊), Gong Xin (龚欣), Wang Jun-Ping (王俊平), Hao Yue (郝跃) |
| |
|
Analytical analysis of surface potential for grooved-gate MOSFET |
| |
|
|
Chin. Phys. B
2006 Vol.15 (3): 631-635
[Abstract]
(1504)
[HTML 0 KB]
[PDF 505 KB]
(634)
|
|
|
2742 |
Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Wang Jian-Ping(王剑屏), Cao Yan-Rong(曹艳荣), and Chen Hai-Feng(陈海峰) |
| |
|
New aspects of HCI test for ultra-short channel n-MOSFET devices |
| |
|
|
Chin. Phys. B
2006 Vol.15 (11): 2742-2745
[Abstract]
(1309)
[HTML 0 KB]
[PDF 181 KB]
(727)
|
|
|
195 |
Ma Xiao-Hua (马晓华), Hao Yue (郝跃), Sun Bao-Gang (孙宝刚), Gao Hai-Xia (高海霞), Ren Hong-Xia (任红霞), Zhang Jin-Cheng (张进城), Zhang Jin-Feng (张金凤), Zhang Xiao-Ju (张晓菊), Zhang Wei-Dong (张卫东) |
| |
|
Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process |
| |
|
|
Chin. Phys. B
2006 Vol.15 (1): 195-198
[Abstract]
(1350)
[HTML 1 KB]
[PDF 270 KB]
(939)
|
|
|
1644 |
Liu Hong-Xia (刘红侠), Hao Yue (郝跃), Hawkins I. D., Peaker A. R. |
| |
|
Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs |
| |
|
|
Chin. Phys. B
2005 Vol.14 (8): 1644-1648
[Abstract]
(1258)
[HTML 1 KB]
[PDF 252 KB]
(489)
|
|
|
808 |
Ma Zhong-Fa (马仲发), Zhuang Yi-Qi (庄奕琪), Du Lei (杜磊), Wei Shan (魏珊) |
| |
|
A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation |
| |
|
|
Chin. Phys. B
2005 Vol.14 (4): 808-811
[Abstract]
(1125)
[HTML 1 KB]
[PDF 215 KB]
(578)
|
|
|
583 |
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) |
| |
|
6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension |
| |
|
|
Chin. Phys. B
2005 Vol.14 (3): 583-585
[Abstract]
(1120)
[HTML 0 KB]
[PDF 223 KB]
(672)
|
|
|
565 |
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦) |
| |
|
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET |
| |
|
|
Chin. Phys. B
2005 Vol.14 (3): 565-570
[Abstract]
(1244)
[HTML 1 KB]
[PDF 279 KB]
(964)
|
|
|
1110 |
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) |
| |
|
Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs |
| |
|
|
Chin. Phys. B
2004 Vol.13 (7): 1110-1113
[Abstract]
(1131)
[HTML 0 KB]
[PDF 190 KB]
(408)
|
|
|
1104 |
Yu Chun-Li (于春利), Yang Lin-An (杨林安), Hao Yue (郝跃) |
| |
|
A compact I－V model for lightly-doped-drain MOSFETs |
| |
|
|
Chin. Phys. B
2004 Vol.13 (7): 1104-1109
[Abstract]
(1045)
[HTML 1 KB]
[PDF 264 KB]
(409)
|
|
|
1815 |
Tong Jian-Nong (童建农), Zou Xue-Cheng (邹雪城), Shen Xu-Bang (沈绪榜) |
| |
|
Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET |
| |
|
|
Chin. Phys. B
2004 Vol.13 (11): 1815-1819
[Abstract]
(1127)
[HTML 1 KB]
[PDF 212 KB]
(409)
|
|
|
189 |
Ren Hong-xia (任红霞), Hao Yue (郝跃) |
| |
|
HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS |
| |
|
|
Chin. Phys. B
2001 Vol.10 (3): 189-193
[Abstract]
(1107)
[HTML 0 KB]
[PDF 257 KB]
(548)
|
|
