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Other articles related with "HEMT"：
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98506 |
Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波) |
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Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode |
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Chin. Phys. B
2023 Vol.32 (9): 98506-098506
[Abstract]
(119)
[HTML 1 KB]
[PDF 1360 KB]
(155)
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67305 |
Peng Zhang(张鹏), Miao Li(李苗), Jun-Wen Chen(陈俊文), Jia-Zhi Liu(刘加志), and Xiao-Hua Ma(马晓华) |
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Research on self-supporting T-shaped gate structure of GaN-based HEMT devices |
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Chin. Phys. B
2023 Vol.32 (6): 67305-067305
[Abstract]
(141)
[HTML 1 KB]
[PDF 1459 KB]
(27)
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40701 |
Hongyang Guo(郭宏阳), Ping Zhang(张平), Shengpeng Yang(杨生鹏), Shaomeng Wang(王少萌), and Yubin Gong(宫玉彬) |
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Numerical study on THz radiation of two-dimensional plasmon resonance of GaN HEMT array |
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Chin. Phys. B
2023 Vol.32 (4): 40701-040701
[Abstract]
(206)
[HTML 1 KB]
[PDF 2888 KB]
(104)
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117105 |
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications |
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Chin. Phys. B
2022 Vol.31 (11): 117105-117105
[Abstract]
(292)
[HTML 1 KB]
[PDF 831 KB]
(90)
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117301 |
Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华) |
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Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress |
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Chin. Phys. B
2022 Vol.31 (11): 117301-117301
[Abstract]
(303)
[HTML 1 KB]
[PDF 916 KB]
(36)
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97307 |
Yue Li(李跃), Xingpeng Liu(刘兴鹏), Tangyou Sun(孙堂友), Fabi Zhang(张法碧), Tao Fu(傅涛), Peihua Wang-yang(王阳培华), Haiou Li(李海鸥)†, and Yonghe Chen(陈永和)‡ |
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Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs |
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Chin. Phys. B
2022 Vol.31 (9): 97307-097307
[Abstract]
(381)
[HTML 0 KB]
[PDF 1304 KB]
(124)
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58506 |
Bo Wang(王博), Peng Ding(丁芃), Rui-Ze Feng(封瑞泽), Shu-Rui Cao(曹书睿), Hao-Miao Wei(魏浩淼), Tong Liu(刘桐), Xiao-Yu Liu(刘晓宇), Hai-Ou Li(李海鸥), and Zhi Jin(金智) |
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Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process |
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Chin. Phys. B
2022 Vol.31 (5): 58506-058506
[Abstract]
(344)
[HTML 1 KB]
[PDF 1783 KB]
(61)
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58502 |
Shurui Cao(曹书睿), Ruize Feng(封瑞泽), Bo Wang(王博), Tong Liu(刘桐), Peng Ding(丁芃), and Zhi Jin(金智) |
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Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2022 Vol.31 (5): 58502-058502
[Abstract]
(345)
[HTML 1 KB]
[PDF 1749 KB]
(125)
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58505 |
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications |
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Chin. Phys. B
2022 Vol.31 (5): 58505-058505
[Abstract]
(377)
[HTML 1 KB]
[PDF 1059 KB]
(133)
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47303 |
Shi-Yu Feng(冯识谕), Yong-Bo Su(苏永波), Peng Ding(丁芃), Jing-Tao Zhou(周静涛), Song-Ang Peng(彭松昂), Wu-Chang Ding(丁武昌), and Zhi Jin(金智) |
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Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation |
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Chin. Phys. B
2022 Vol.31 (4): 47303-047303
[Abstract]
(364)
[HTML 1 KB]
[PDF 3009 KB]
(169)
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27301 |
Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching |
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Chin. Phys. B
2022 Vol.31 (2): 27301-027301
[Abstract]
(468)
[HTML 1 KB]
[PDF 3554 KB]
(146)
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18505 |
Ruize Feng(封瑞泽), Bo Wang(王博), Shurui Cao(曹书睿), Tong Liu(刘桐), Yongbo Su(苏永波), Wuchang Ding(丁武昌), Peng Ding(丁芃), and Zhi Jin(金智) |
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Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs |
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Chin. Phys. B
2022 Vol.31 (1): 18505-018505
[Abstract]
(416)
[HTML 1 KB]
[PDF 1023 KB]
(143)
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108502 |
Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞) |
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Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (10): 108502-108502
[Abstract]
(458)
[HTML 1 KB]
[PDF 2657 KB]
(136)
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70702 |
Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智) |
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A comparative study on radiation reliability of composite channel InP high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (7): 70702-070702
[Abstract]
(437)
[HTML 1 KB]
[PDF 1188 KB]
(156)
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77305 |
Yi-Dong Yuan(原义栋), Dong-Yan Zhao(赵东艳), Yan-Rong Cao(曹艳荣), Yu-Bo Wang(王于波), Jin Shao(邵瑾), Yan-Ning Chen(陈燕宁), Wen-Long He(何文龙), Jian Du(杜剑), Min Wang(王敏), Ye-Ling Peng(彭业凌), Hong-Tao Zhang(张宏涛), Zhen Fu(付振), Chen Ren(任晨), Fang Liu(刘芳), Long-Tao Zhang(张龙涛), Yang Zhao(赵扬), Ling Lv(吕玲), Yi-Qiang Zhao(赵毅强), Xue-Feng Zheng(郑雪峰), Zhi-Mei Zhou(周芝梅), Yong Wan(万勇), and Xiao-Hua Ma(马晓华) |
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Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress |
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Chin. Phys. B
2021 Vol.30 (7): 77305-077305
[Abstract]
(408)
[HTML 1 KB]
[PDF 760 KB]
(74)
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57302 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃) |
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Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT |
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Chin. Phys. B
2021 Vol.30 (5): 57302-057302
[Abstract]
(603)
[HTML 1 KB]
[PDF 977 KB]
(159)
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47103 |
Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪) |
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Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor |
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Chin. Phys. B
2021 Vol.30 (4): 47103-
[Abstract]
(333)
[HTML 1 KB]
[PDF 2118 KB]
(99)
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40502 |
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (4): 40502-
[Abstract]
(536)
[HTML 1 KB]
[PDF 3285 KB]
(121)
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28502 |
Xing-Ye Zhou(周幸叶), Xin Tan(谭鑫), Yuan-Jie Lv(吕元杰), Guo-Dong Gu(顾国栋), Zhi-Rong Zhang(张志荣), Yan-Min Guo(郭艳敏), Zhi-Hong Feng(冯志红), and Shu-Jun Cai(蔡树军) |
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Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment |
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Chin. Phys. B
2021 Vol.30 (2): 28502-0
[Abstract]
(532)
[HTML 1 KB]
[PDF 657 KB]
(74)
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27303 |
Jin-Jin Tang(汤金金), Gui-Peng Liu(刘贵鹏), Jia-Yu Song(宋家毓), Gui-Juan Zhao(赵桂娟), and Jian-Hong Yang(杨建红) |
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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation |
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Chin. Phys. B
2021 Vol.30 (2): 27303-0
[Abstract]
(398)
[HTML 1 KB]
[PDF 761 KB]
(106)
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18501 |
Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智) |
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Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2021 Vol.30 (1): 18501-
[Abstract]
(378)
[HTML 1 KB]
[PDF 2201 KB]
(135)
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127701 |
Yong Liu(刘勇), Qi Yu(于奇), and Jiang-Feng Du(杜江锋) |
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A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications |
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Chin. Phys. B
2020 Vol.29 (12): 127701-
[Abstract]
(414)
[HTML 1 KB]
[PDF 1552 KB]
(101)
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127101 |
Meihua Liu(刘美华), Zhangwei Huang(黄樟伟), Kuan-Chang Chang(张冠张), Xinnan Lin(林信南), Lei Li(李蕾), and Yufeng Jin(金玉丰) |
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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology |
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Chin. Phys. B
2020 Vol.29 (12): 127101-
[Abstract]
(392)
[HTML 1 KB]
[PDF 1236 KB]
(52)
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107302 |
Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃) |
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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments |
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Chin. Phys. B
2020 Vol.29 (10): 107302-
[Abstract]
(584)
[HTML 1 KB]
[PDF 1123 KB]
(76)
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107201 |
Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Qiu-Ling Qiu(丘秋凌), Liu-An Li(李柳暗), Liang He(何亮), Jin-Wei Zhang(张津玮), Chen-Liang Feng(冯辰亮), Zhen-Xing Liu(刘振兴), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Yun-Liang Rao(饶运良), Zhi-Yuan He(贺致远), and Yang Liu (刘扬)† |
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Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (10): 107201-
[Abstract]
(632)
[HTML 1 KB]
[PDF 1171 KB]
(111)
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87305 |
Sheng Hu(胡晟), Ling Yang(杨凌), Min-Han Mi(宓珉瀚), Bin Hou(侯斌), Sheng Liu(刘晟), Meng Zhang(张濛), Mei Wu(武玫), Qing Zhu(朱青), Sheng Wu(武盛), Yang Lu(卢阳), Jie-Jie Zhu(祝杰杰), Xiao-Wei Zhou(周小伟), Ling Lv(吕玲), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures |
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Chin. Phys. B
2020 Vol.29 (8): 87305-087305
[Abstract]
(603)
[HTML 0 KB]
[PDF 744 KB]
(129)
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87304 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃) |
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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators |
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Chin. Phys. B
2020 Vol.29 (8): 87304-087304
[Abstract]
(593)
[HTML 0 KB]
[PDF 1089 KB]
(122)
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67203 |
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (6): 67203-067203
[Abstract]
(630)
[HTML 1 KB]
[PDF 770 KB]
(153)
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57307 |
Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃) |
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High performance InAlN/GaN high electron mobility transistors for low voltage applications |
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Chin. Phys. B
2020 Vol.29 (5): 57307-057307
[Abstract]
(627)
[HTML 1 KB]
[PDF 1214 KB]
(190)
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47304 |
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃) |
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Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs |
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Chin. Phys. B
2020 Vol.29 (4): 47304-047304
[Abstract]
(591)
[HTML 1 KB]
[PDF 753 KB]
(173)
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48104 |
Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强) |
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Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate |
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Chin. Phys. B
2020 Vol.29 (4): 48104-048104
[Abstract]
(599)
[HTML 1 KB]
[PDF 2637 KB]
(168)
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37201 |
Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Liang He(何亮), Qiu-Ling Qiu(丘秋凌), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (3): 37201-037201
[Abstract]
(619)
[HTML 1 KB]
[PDF 1180 KB]
(155)
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38502 |
Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超) |
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Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane |
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Chin. Phys. B
2020 Vol.29 (3): 38502-038502
[Abstract]
(525)
[HTML 1 KB]
[PDF 714 KB]
(139)
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27301 |
Zhong-Xu Wang(王中旭), Lin Du(杜林), Jun-Wei Liu(刘俊伟), Ying Wang(王颖), Yun Jiang(江芸), Si-Wei Ji(季思蔚), Shi-Wei Dong(董士伟), Wei-Wei Chen(陈伟伟), Xiao-Hong Tan(谭骁洪), Jin-Long Li(李金龙), Xiao-Jun Li(李小军), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height |
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Chin. Phys. B
2020 Vol.29 (2): 27301-027301
[Abstract]
(1037)
[HTML 1 KB]
[PDF 847 KB]
(282)
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107301 |
Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer |
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Chin. Phys. B
2019 Vol.28 (10): 107301-107301
[Abstract]
(766)
[HTML 1 KB]
[PDF 1005 KB]
(260)
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67304 |
Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃) |
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (6): 67304-067304
[Abstract]
(826)
[HTML 1 KB]
[PDF 591 KB]
(194)
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47302 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿) |
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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer |
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Chin. Phys. B
2019 Vol.28 (4): 47302-047302
[Abstract]
(743)
[HTML 1 KB]
[PDF 496 KB]
(231)
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27302 |
Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂) |
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Theoretical analytic model for RESURF AlGaN/GaN HEMTs |
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Chin. Phys. B
2019 Vol.28 (2): 27302-027302
[Abstract]
(1123)
[HTML 1 KB]
[PDF 504 KB]
(263)
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27301 |
Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor |
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Chin. Phys. B
2019 Vol.28 (2): 27301-027301
[Abstract]
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[PDF 507 KB]
(236)
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97201 |
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Yuming Zhang(张玉明) |
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Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors |
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Chin. Phys. B
2018 Vol.27 (9): 97201-097201
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(222)
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28502 |
Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智) |
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Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2018 Vol.27 (2): 28502-028502
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(269)
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107301 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨) |
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Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier |
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Chin. Phys. B
2017 Vol.26 (10): 107301-107301
[Abstract]
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[PDF 349 KB]
(606)
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98504 |
Jianfei Li(李建飞), Yuanjie Lv(吕元杰), Changfu Li(李长富), Ziwu Ji(冀子武), Zhiyong Pang(庞智勇), Xiangang Xu(徐现刚), Mingsheng Xu(徐明升) |
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Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs |
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Chin. Phys. B
2017 Vol.26 (9): 98504-098504
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17304 |
Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2017 Vol.26 (1): 17304-017304
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(475)
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127305 |
Wei Mao(毛维), Ju-Sheng Fan(范举胜), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate |
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Chin. Phys. B
2016 Vol.25 (12): 127305-127305
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108504 |
Chong Wang(王冲), Meng-Di Zhao(赵梦荻), Yun-Long He(何云龙), Xue-Feng Zheng(郑雪峰), Kun Zhang(张坤), Xiao-Xiao Wei(魏晓晓), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT |
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Chin. Phys. B
2016 Vol.25 (10): 108504-108504
[Abstract]
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108501 |
Shu-Xiang Sun(孙树祥), Hui-Fang Ji(吉慧芳), Hui-Juan Yao(姚会娟), Sheng Li(李胜), Zhi Jin(金智), Peng Ding(丁芃), Ying-Hui Zhong(钟英辉) |
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Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs |
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Chin. Phys. B
2016 Vol.25 (10): 108501-108501
[Abstract]
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(798)
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88504 |
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾) |
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Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse |
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Chin. Phys. B
2016 Vol.25 (8): 88504-088504
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[PDF 1356 KB]
(390)
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87304 |
Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃) |
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Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures |
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Chin. Phys. B
2016 Vol.25 (8): 87304-087304
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(411)
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67306 |
Li-Shu Wu(吴立枢), Yan Zhao(赵岩), Hong-Chang Shen(沈宏昌) You-Tao Zhang(张有涛), Tang-Sheng Chen(陈堂胜) |
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Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip |
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Chin. Phys. B
2016 Vol.25 (6): 67306-067306
[Abstract]
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[PDF 1284 KB]
(313)
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48504 |
Yang Liu(刘阳), Chang-Chun Chai(柴常春), Yin-Tang Yang(杨银堂), Jing Sun(孙静), Zhi-Peng Li(李志鹏) |
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Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave |
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Chin. Phys. B
2016 Vol.25 (4): 48504-048504
[Abstract]
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[PDF 1379 KB]
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48503 |
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Gang Zhao(赵刚), Yin-Tang Yang(杨银堂), Xin-Hai Yu(于新海), Yang Liu(刘阳) |
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Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse |
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Chin. Phys. B
2016 Vol.25 (4): 48503-048503
[Abstract]
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[PDF 1762 KB]
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27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27303-027303
[Abstract]
(945)
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[PDF 496 KB]
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17303 |
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
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Chin. Phys. B
2016 Vol.25 (1): 17303-017303
[Abstract]
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[PDF 1923 KB]
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117307 |
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AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation |
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Chin. Phys. B
2015 Vol.24 (11): 117307-117307
[Abstract]
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[PDF 1534 KB]
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117305 |
Luo Jun (罗俊), Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Yang Xiao-Lei (杨晓蕾), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors |
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Chin. Phys. B
2015 Vol.24 (11): 117305-117305
[Abstract]
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[HTML 1 KB]
[PDF 339 KB]
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107305 |
Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Lu Yang (卢阳), Zhao Bo-Chao (赵博超), Zhang Hong-He (张宏鹤), Zhang Meng (张濛), Cao Meng-Yi (曹梦逸), Hao Yue (郝跃) |
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A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT |
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Chin. Phys. B
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[Abstract]
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87305 |
Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美) |
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Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications |
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Chin. Phys. B
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[Abstract]
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[PDF 574 KB]
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78102 |
Huang Jie (黄杰), Li Ming (黎明), Lau Kei-May (刘纪美) |
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Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD |
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Chin. Phys. B
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[Abstract]
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[HTML 1 KB]
[PDF 888 KB]
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56103 |
Lei Zhi-Feng (雷志锋), Guo Hong-Xia (郭红霞), Zeng Chang (曾畅), Chen Hui (陈辉), Wang Yuan-Sheng (王远声), Zhang Zhan-Gang (张战刚) |
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Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs |
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Chin. Phys. B
2015 Vol.24 (5): 56103-056103
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[PDF 1352 KB]
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48503 |
Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
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[Abstract]
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[HTML 0 KB]
[PDF 462 KB]
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48502 |
Yu Xin-Hai (于新海), Chai Chang-Chun (柴常春), Liu Yang (刘阳), Yang Yin-Tang (杨银堂), Xi Xiao-Wen (席晓文) |
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Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor |
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Chin. Phys. B
2015 Vol.24 (4): 48502-048502
[Abstract]
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[PDF 556 KB]
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27101 |
Ma Xiao-Hua (马晓华), Zhang Ya-Man (张亚嫚), Wang Xin-Hua (王鑫华), Yuan Ting-Ting (袁婷婷), Pang Lei (庞磊), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values |
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Chin. Phys. B
2015 Vol.24 (2): 27101-027101
[Abstract]
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[PDF 457 KB]
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27303 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment |
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Chin. Phys. B
2015 Vol.24 (2): 27303-027303
[Abstract]
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27302 |
Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Chen Yong-He (陈永和), Kang Di (康迪), Zhang Jian-Kun (张建坤), Wang Chong (王冲), Mo Jiang-Hui (默江辉), Li Liang (李亮), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation |
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Chin. Phys. B
2015 Vol.24 (2): 27302-027302
[Abstract]
(947)
[HTML 0 KB]
[PDF 390 KB]
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17303 |
Sun Wei-Wei (孙伟伟), Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Wang Chong (王冲), Du Ming (杜鸣), Zhang Kai (张凯), Chen Wei-Wei (陈伟伟), Cao Yan-Rong (曹艳荣), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress |
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Chin. Phys. B
2015 Vol.24 (1): 17303-017303
[Abstract]
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[PDF 313 KB]
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127304 |
Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇) |
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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method |
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Chin. Phys. B
2014 Vol.23 (12): 127304-127304
[Abstract]
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[HTML 1 KB]
[PDF 958 KB]
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128102 |
Huang Jie (黄杰), Li Ming (黎明), Tang Chak-Wah (邓泽华), Lau Kei-May (刘纪美) |
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Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD |
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Chin. Phys. B
2014 Vol.23 (12): 128102-128102
[Abstract]
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107303 |
Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain |
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Chin. Phys. B
2014 Vol.23 (10): 107303-107303
[Abstract]
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[HTML 1 KB]
[PDF 1455 KB]
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97307 |
Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range |
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Chin. Phys. B
2014 Vol.23 (9): 97307-097307
[Abstract]
(712)
[HTML 1 KB]
[PDF 315 KB]
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87201 |
Cao Meng-Yi (曹梦逸), Lu Yang (卢阳), Wei Jia-Xing (魏家行), Chen Yong-He (陈永和), Li Wei-Jun (李卫军), Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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An improved EEHEMT model for kink effect on AlGaN/GaN HEMT |
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Chin. Phys. B
2014 Vol.23 (8): 87201-087201
[Abstract]
(820)
[HTML 1 KB]
[PDF 446 KB]
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87305 |
Mao Wei (毛维), She Wei-Bo (佘伟波), Yang Cui (杨翠), Zhang Chao (张超), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Zhang Jin-Feng (张金风), Liu Hong-Xia (刘红侠), Yang Lin-An (杨林安), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Chen Yong-He (陈永和), Zheng Xue-Feng (郑雪峰), Hao Yue (郝跃) |
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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor |
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Chin. Phys. B
2014 Vol.23 (8): 87305-087305
[Abstract]
(540)
[HTML 1 KB]
[PDF 1948 KB]
(525)
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77304 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage |
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Chin. Phys. B
2014 Vol.23 (7): 77304-077304
[Abstract]
(605)
[HTML 1 KB]
[PDF 433 KB]
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38403 |
Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) |
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (3): 38403-038403
[Abstract]
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[PDF 1317 KB]
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37305 |
Cao Meng-Yi (曹梦逸), Zhang Kai (张凯), Chen Yong-He (陈永和), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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High-efficiency S-band harmonic tuning GaN amplifier |
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Chin. Phys. B
2014 Vol.23 (3): 37305-037305
[Abstract]
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[HTML 1 KB]
[PDF 419 KB]
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27302 |
Ma Xiao-Hua (马晓华), Lü Min (吕敏), Pang Lei (庞磊), Jiang Yuan-Qi (姜元祺), Yang Jing-Zhi (杨靖治), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier |
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Chin. Phys. B
2014 Vol.23 (2): 27302-027302
[Abstract]
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[HTML 1 KB]
[PDF 409 KB]
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20701 |
Liu Yu-An (刘宇安), Zhuang Yi-Qi (庄奕琪), Ma Xiao-Hua (马晓华), Du Ming (杜鸣), Bao Jun-Lin (包军林), Li Cong (李聪) |
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A unified drain current 1/f noise model for GaN-based high electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (2): 20701-020701
[Abstract]
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[HTML 1 KB]
[PDF 306 KB]
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107303 |
Chen Wei-Wei (陈伟伟), Ma Xiao-Hua (马晓华), Hou Bin (侯斌), Zhu Jie-Jie (祝杰杰), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress |
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Chin. Phys. B
2013 Vol.22 (10): 107303-107303
[Abstract]
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[HTML 1 KB]
[PDF 382 KB]
(687)
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97303 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs |
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Chin. Phys. B
2013 Vol.22 (9): 97303-097303
[Abstract]
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[HTML 1 KB]
[PDF 354 KB]
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17202 |
Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键) |
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Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation |
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Chin. Phys. B
2013 Vol.22 (1): 17202-017202
[Abstract]
(1057)
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[PDF 330 KB]
(2223)
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126102 |
Tian Ben-Lang (田本朗), Chen Chao (陈超), Li Yan-Rong (李言荣), Zhang Wan-Li (张万里), Liu Xing-Zhao (刘兴钊) |
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Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
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Chin. Phys. B
2012 Vol.21 (12): 126102-126102
[Abstract]
(1020)
[HTML 1 KB]
[PDF 411 KB]
(830)
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128501 |
Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇) |
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Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application |
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Chin. Phys. B
2012 Vol.21 (12): 128501-128501
[Abstract]
(1131)
[HTML 1 KB]
[PDF 641 KB]
(2101)
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108503 |
Fu Li-Hua (付立华), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Zhang Rongm (张荣), Zheng You-Dou (郑有炓), Wei Ke (魏珂), Liu Xin-Yu (刘新宇) |
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High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2012 Vol.21 (10): 108503-108503
[Abstract]
(1195)
[HTML 1 KB]
[PDF 178 KB]
(932)
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86105 |
Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng |
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An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage |
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Chin. Phys. B
2012 Vol.21 (8): 86105-086105
[Abstract]
(1397)
[HTML 1 KB]
[PDF 1274 KB]
(1635)
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57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
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Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
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Chin. Phys. B
2012 Vol.21 (5): 57201-057201
[Abstract]
(1370)
[HTML 1 KB]
[PDF 562 KB]
(1474)
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97203 |
Mao Wei(毛维),Yang Cui(杨翠),Hao Yao(郝跃), Ma Xiao-Hua(马晓华), Wang Chong(王冲),Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Yang Lin-An(杨林安), Yang Ling(杨凌), Zhang Kai(张凯), Zhang Nai-Qian(张乃千),and Pei Yei(裴轶) |
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The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT |
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Chin. Phys. B
2011 Vol.20 (9): 97203-097203
[Abstract]
(1417)
[HTML 0 KB]
[PDF 303 KB]
(1016)
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27304 |
Ma Xiao-Hua(马晓华), Pan Cai-Yuan(潘才渊), Yang Li-Yuan(杨丽媛), Yu Hui-You(于惠游), Yang Ling(杨凌), Quan Si(全思), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths |
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Chin. Phys. B
2011 Vol.20 (2): 27304-027304
[Abstract]
(1363)
[HTML 1 KB]
[PDF 662 KB]
(1388)
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127305 |
Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses |
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Chin. Phys. B
2011 Vol.20 (12): 127305-127305
[Abstract]
(1492)
[HTML 1 KB]
[PDF 271 KB]
(1236)
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17203 |
Mao Wei(毛维), Yang Cui(杨翠), Hao Yao(郝跃), Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Wang Chong(王冲), Yang Lin-An(杨林安), Zhang Jin-Feng(张金风), and Kuang Xian-Wei(匡贤伟) |
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Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT |
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Chin. Phys. B
2011 Vol.20 (1): 17203-017203
[Abstract]
(1901)
[HTML 0 KB]
[PDF 823 KB]
(1646)
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97302 |
Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇), Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂) |
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The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97302-097302
[Abstract]
(1793)
[HTML 0 KB]
[PDF 193 KB]
(3636)
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77303 |
Bi Zhi-Wei(毕志伟), Feng Qian(冯倩), Hao Yue(郝跃), Wang Dang-Hui(王党会), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Quan Si(全思), and Xu Sheng-Rui(许晟瑞) |
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AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition |
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Chin. Phys. B
2010 Vol.19 (7): 77303-077303
[Abstract]
(1715)
[HTML 0 KB]
[PDF 662 KB]
(866)
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37302 |
Xu Jing-Bo(徐静波), Zhang Hai-Ying(张海英), Fu Xiao-Jun(付晓君), Guo Tian-Yi(郭天义), and Huang Jie(黄杰) |
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Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition |
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Chin. Phys. B
2010 Vol.19 (3): 37302-037302
[Abstract]
(1741)
[HTML 1 KB]
[PDF 1913 KB]
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3014 |
Feng Qian(冯倩), Tian Yuan(田园), Bi Zhi-Wei(毕志伟), Yue Yuan-Zheng(岳远征), Ni Jin-Yu(倪金玉), Zhang Jin-Cheng(张进成), Hao Yue(郝跃), and Yang Lin-An(杨林安) |
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The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment |
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Chin. Phys. B
2009 Vol.18 (7): 3014-3017
[Abstract]
(1508)
[HTML 1 KB]
[PDF 714 KB]
(985)
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2912 |
Fan Long(范隆), Hao Yue(郝跃), Zhao Yuan-Fu(赵元富), Zhang Jin-Cheng(张进城), Gao Zhi-Yuan(高志远), and Li Pei-Xian(李培咸) |
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs) |
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Chin. Phys. B
2009 Vol.18 (7): 2912-2919
[Abstract]
(1428)
[HTML 1 KB]
[PDF 275 KB]
(824)
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1854 |
Ma Ming-Rui(马明瑞), Chen Yu-Ling(陈钰玲), Wang Li-Min(王立敏), and Wang Chang(王长) |
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Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors |
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Chin. Phys. B
2008 Vol.17 (5): 1854-1857
[Abstract]
(1228)
[HTML 0 KB]
[PDF 300 KB]
(631)
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1405 |
Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华) |
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A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress |
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Chin. Phys. B
2008 Vol.17 (4): 1405-1409
[Abstract]
(1626)
[HTML 1 KB]
[PDF 291 KB]
(887)
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3494 |
Cheng Zhi-Qun(程知群), Cai Yong(蔡勇), Liu Jie(刘杰), Zhou Yu-Gang(周玉刚), Lau Kei May, and Chen J. Kevin |
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MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs |
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Chin. Phys. B
2007 Vol.16 (11): 3494-3497
[Abstract]
(1526)
[HTML 1 KB]
[PDF 519 KB]
(860)
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2657 |
Ma Ming-Rui(马明瑞), Chen Yu-Ling(陈钰玲), and Wang Chang(王长) |
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Effect of magnetic field on the terahertz radiationdetection in high electron mobility transistors |
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Chin. Phys. B
2006 Vol.15 (11): 2657-2660
[Abstract]
(1405)
[HTML 0 KB]
[PDF 141 KB]
(562)
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2422 |
Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣) |
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A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor |
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Chin. Phys. B
2006 Vol.15 (10): 2422-2426
[Abstract]
(1654)
[HTML 1 KB]
[PDF 408 KB]
(521)
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