CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress |
Sun Wei-Wei (孙伟伟)a b, Zheng Xue-Feng (郑雪峰)a b, Fan Shuang (范爽)a b, Wang Chong (王冲)a b, Du Ming (杜鸣)a b, Zhang Kai (张凯)a b, Chen Wei-Wei (陈伟伟)b, Cao Yan-Rong (曹艳荣)b, Mao Wei (毛维)a b, Ma Xiao-Hua (马晓华)b, Zhang Jin-Cheng (张进成)a b, Hao Yue (郝跃)a b |
a School of Microelectronics, Xidian University, Xi'an 710071, China; b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
|
|
Abstract The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT's reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons.
|
Received: 04 June 2014
Revised: 29 July 2014
Accepted manuscript online:
|
PACS:
|
73.61.Ey
|
(III-V semiconductors)
|
|
85.40.Ry
|
(Impurity doping, diffusion and ion implantation technology)
|
|
78.30.Fs
|
(III-V and II-VI semiconductors)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars. |
Corresponding Authors:
Zheng Xue-Feng
E-mail: xfzheng@mail.xidian.edu.cn
|
Cite this article:
Sun Wei-Wei (孙伟伟), Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Wang Chong (王冲), Du Ming (杜鸣), Zhang Kai (张凯), Chen Wei-Wei (陈伟伟), Cao Yan-Rong (曹艳荣), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress 2015 Chin. Phys. B 24 017303
|
[1] |
Heikman S, Keller S, Wu Y, Speck J S, DenBaars S P and Mishra U K 2003 J. Appl. Phys. 93 10114
|
[2] |
Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
|
[3] |
Meneghesso G, Verzellesi G, Danesin F, Rampazzo F, Zanon F, Tazzoli A, Meneghini M and Zanoni E 2008 IEEE Trans. Dev. Mater. Reliab. 8 332
|
[4] |
Oka T and Nozawa T 2008 IEEE Electron. Dev Lett. 29 668
|
[5] |
Tipirneni N, Koudymov A, Adivarahan V, Yang J, Simin G and Khan M A 2006 IEEE Electron Dev. Lett. 27 716
|
[6] |
Ma X H, Jiang Y Q, Wang X H, Lü M, Zhang H, Chen W W and Liu X Y 2014 Chin. Phys. B 23 017303
|
[7] |
Zhao S L, Chen W W, Yue T, Wang Y, Luo J, Mao W, Ma X H and Hao Y 2013 Chin. Phys. B 22 117307
|
[8] |
Kang H, Wang Q, Xiao H L, Wang C M, Jiang L J, Feng C, Chen H, Yin H B, Wang X L, Wang Z G and Hou X 2014 Chin. Phys. Lett. 31 068502
|
[9] |
Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
|
[10] |
Mishra U K, Shen L, Kazior T E and Wu Y F 2008 Proc. IEEE 96 287
|
[11] |
Wang C, He Y L, Ding N, Zheng X F, Zhang P, Ma X H, Zhang J C and Hao Y 2014 Chin. Phys. Lett. 31 038501
|
[12] |
Chiu H C, Yang C W, Chen C H, Fu J S and Chien F T 2011 Appl. Phys. Lett. 99 153508
|
[13] |
Wen Y H, He Z Y, Li J L, Luo R H, Xiang P, Deng Q Y, Xu G N, Shen Z, Wu Z H, Zhang B J, Jiang H, Wang G and Liu Y 2011 Appl. Phys. Lett. 98 072108
|
[14] |
Khan M A, Chen Q, Sun C J, Yang J W, Blasingame M, Shur M S and Park H 1996 Appl. Phys. Lett. 68 514
|
[15] |
Moon J S, Wong D, Hussain T Micovic M, Deelman P, Hu M, Antcliffe M, Ngo C, Hashimoto P and McCray L 2002 60th Device Research Conference, Santa Barbara, CA, USA, p. 23
|
[16] |
Tsuyukuchi N, Nagamatsu K, Hirose Y, Iwaya M, Kamiyama S, Amano H and Akasaki I 2006 Jpn J. Appl. Phys. 45 L319
|
[17] |
Cai Y, Zhou Y G, Chen K J and Lau K M 2005 IEEE Electron Dev. Lett. 26 435
|
[18] |
Huang S, Chen H W and Chen K J 2010 Appl. Phys. Lett. 96 233510
|
[19] |
Yi C W, Wang R N, Huang W, Tang W W, Lau K M and Chen K J 2007 Electron Devices Meeting (IEDM) IEEE International pp. 389-392
|
[20] |
Ma C Y, Chen H W, Zhou C H, Huang S, Yuan L, Roberts J and Chen K J 2010 Electron Devices Meeting (IEDM), IEEE International, pp. 20-24
|
[21] |
Ma X H, Jiao Y, Ma P, He Q, Ma J G, Zhang K, Zhang H L, Zhang J C and Hao Y 2011 Chin. Phys. B 20 127305
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|