Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

doi:10.1088/1674-1056/24/4/048502

Abstract The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results.

Keywords: pHEMT damage mechanism high power microwave pulse-width

Received: 29 October 2014
Revised: 14 November 2014
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the National Natural Science Foundation of China (Grant No. 60776034).

Corresponding Authors: Yu Xin-Hai
E-mail: xhyu@stu.xidian.edu.cn

Cite this article:

Yu Xin-Hai (于新海), Chai Chang-Chun (柴常春), Liu Yang (刘阳), Yang Yin-Tang (杨银堂), Xi Xiao-Wen (席晓文) Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor 2015 Chin. Phys. B 24 048502

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Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

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