Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric

doi:10.1088/1674-1056/ab696b

Abstract The effect of high overdrive voltage on the positive bias temperature instability (PBTI) trapping behavior is investigated for GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency-conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.

Keywords: gallium nitride LPCVD-SiN_x MIS-HEMTs overdrive voltage trapping behavior

Received: 02 December 2019
Revised: 06 January 2020
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	72.80.Sk	(Insulators)
	73.20.At	(Surface states, band structure, electron density of states)
	77.22.Jp	(Dielectric breakdown and space-charge effects)

Fund: Project supported by the National Key Research and Development Program, China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2019B010128002), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Corresponding Authors: Yang Liu
E-mail: liuy69@mail.sysu.edu.cn

Cite this article:

Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Liang He(何亮), Qiu-Ling Qiu(丘秋凌), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric 2020 Chin. Phys. B 29 037201

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Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric

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Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric