Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

doi:10.1088/1674-1056/25/8/088504

Abstract An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.

Keywords: PHEMT electromagnetic pulse damage threshold empirical formula

Received: 28 February 2016
Revised: 28 March 2016
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Corresponding Authors: Xiao-Wen Xi
E-mail: xixw841003@163.com

Cite this article:

Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾) Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse 2016 Chin. Phys. B 25 088504

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Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

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