Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

doi:10.1088/1674-1056/ac7b1a

Abstract Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.

Keywords: ferroelectric polarization HfZrO ferroelectric gate HEMTs

Received: 06 April 2022
Revised: 02 June 2022
Accepted manuscript online: 22 June 2022

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	77.90.+k	(Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties)

Fund: Project supported by Guangxi Science and Technology Planning Project (Grant Nos. AD19245066, AA19254015, AD21220150, and AD18281037), the National Nature Science Foundation of China (Grant Nos. 61874036, 62174041, and 62041403), China Postdoctoral Science Foundation (Grant No. 2020M683626XB), the Natural Science Foundation of Guangxi Zhuang Autonomous Region (Grant No. 2018GXNSFAA138025), Guangxi Innovation Research Team Project (Grant No. 2018GXNSFGA281004), GUET Excellent Graduate Thesis (Grant No. YXYJRX01), and the Fund from the State Key Laboratory of ASIC & System (Grant No. KVH1233021).

Corresponding Authors: Haiou Li, Yonghe Chen
E-mail: lihaiou@guet.edu.cn;yhchen@guet.edu.cn

Cite this article:

Yue Li(李跃), Xingpeng Liu(刘兴鹏), Tangyou Sun(孙堂友), Fabi Zhang(张法碧), Tao Fu(傅涛), Peihua Wang-yang(王阳培华), Haiou Li(李海鸥)^†, and Yonghe Chen(陈永和)^‡ Impact of Al_xGa_1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al₂O₃/AlGaN/GaN MFSHEMTs 2022 Chin. Phys. B 31 097307

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Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

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Impact of Al_xGa_1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al₂O₃/AlGaN/GaN MFSHEMTs