Effect of magnetic field on the terahertz radiationdetection in high electron mobility transistors
Ma Ming-Rui(马明瑞)†, Chen Yu-Ling(陈钰玲), and Wang Chang(王长)‡
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences and Graduate School of Chinese Academy of Sciences, Shanghai 200050, China
Abstract In this paper, we make a theoretical investigation of the plasma-wave instability mechanism in a two-dimensional electron fluid in a high electron mobility transistor (HEMT) driven by the terahertz radiation in the presence of a perpendicular magnetic field. It is found that the resonant peaks of the gate-to-source/drain admittances and detection responsivity depend on the strength of the external magnetic field. Such phenomena can be used to produce a desired effect by adjusting the intensity of the magnetic field.
Received: 28 February 2006
Revised: 23 June 2006
Accepted manuscript online:
PACS:
52.35.-g
(Waves, oscillations, and instabilities in plasmas and intense beams)
Fund: Project supported by the National Natural Science Foundation for outstanding Young Scientists of China (Grant No 60425415), the Major Program of the National Natural Science Foundation of China (Grant No 10390162), and the Shanghai Municipal Commission of Science and Technology of China (Grant No 05XD14020).
Cite this article:
Ma Ming-Rui(马明瑞), Chen Yu-Ling(陈钰玲), and Wang Chang(王长) Effect of magnetic field on the terahertz radiationdetection in high electron mobility transistors 2006 Chinese Physics 15 2657
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