Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs
Ruize Feng(封瑞泽)1,2, Bo Wang(王博)1,3, Shurui Cao(曹书睿)1,2, Tong Liu(刘桐)1, Yongbo Su(苏永波)1,2, Wuchang Ding(丁武昌)1,2, Peng Ding(丁芃)1,2,†, and Zhi Jin(金智)1,2,‡
1 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; 2 University of Chinese Academy of Sciences, Beijing 100029, China; 3 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
Abstract We fabricated a set of symmetric gate-recess devices with gate length of 70nm. We kept the source-to-drain spacing () unchanged, and obtained a group of devices with gate-recess length from 0.4m to 0.8m through process improvement. In order to suppress the influence of the kink effect, we have done SiN passivation treatment. The maximum saturation current density () and maximum transconductance () increase as Lrecess decreases to 0.4m. At this time, the device shows mA/mm at V, V, and mS/mm at V, V. Meanwhile, as increases, it causes parasitic capacitance and to decrease, making drastically increases. When Lrecess=0.8m, the device shows GHz and GHz.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61434006). The authors would like to thank Yan-kui Li for his assistance during the measurements. We are also grateful to all the members of HighFrequency High-Voltage Device and Integrated Circuits Center for their valuable help during the experiment.
Corresponding Authors:
Peng Ding, Zhi Jin
E-mail: dingpeng@ime.ac.cn;jinzhi@ime.ac.cn
Cite this article:
Ruize Feng(封瑞泽), Bo Wang(王博), Shurui Cao(曹书睿), Tong Liu(刘桐), Yongbo Su(苏永波), Wuchang Ding(丁武昌), Peng Ding(丁芃), and Zhi Jin(金智) Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs 2022 Chin. Phys. B 31 018505
[1] Kim D H, Brar B and A del Alamo J 2011 Electron Devices Meeting, December 5-7, 2011, Washington, USA, pp. 13.6.1-13.6.13 [2] Zhong Y, Yang B, Chang M, Ding P, Ma L, Li M, Duan Z, Yang J, Jin Z and Wei Z 2020 Chin. Phys. B29 038502 [3] Sun S X, Wei Z C, Xia P H, Wang W B, Duan Z Y, Li Y X, Zhong Y H, Ding P and Jin Z 2018 Chin. Phys. B27 028502 [4] Sun S, Chang M, Li M, Ma L, Zhong Y, Li Y, Ding P, Jin Z and Wei Z 2019 Chin. Phys. B28 078501 [5] Li J L, Cui S H, Xu J X, Cui X R, Guo C Y, Ma B, Ni H Q and Niu Z C 2018 Chin. Phys. B27 047101 [6] Cha E, Pourkabirian A, Schleeh J, Wa De Falk N and Grahn J 2016 Compound Semiconductor Week, 2016, pp. 1-2 [7] Yun D Y, Jo H B, Son S W, Baek J M, Lee J H, Kim T W, Kim D H, Tsutsumi T, Sugiyama H and Matsuzaki H 2018 IEEE Electron Dev. Lett.39 1844 [8] Tsuyoshi, Takahashi, Yoichi, Kawano, Kozo, Makiyama, Shoichi, Shiba, Masaru and Sato 2017 IEEE Trans. Electron Dev.64 89 [9] Shinohara K, Chen P S, Bergman J, Kazemi H, Brar B, Watanabe I, Matsui T, Yamashita Y, Endoh A and Hikosaka K 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, pp. 337-340 [10] Kim D H and del Alamo J A 2010 IEEE Electron Dev. Lett.31 806 [11] Shinohara K, Yamashita Y, Endoh A, Hikosaka K and Hiyamizu S 2002 60th DRC. Conference Digest Device Research Conference, 2002, pp. 163-166 [12] Tong Z H, Ding P, Su Y B, Wang D H and Jin Z 2021 Chin. Phys. B30 018501 [13] Zhong Y, Sun S, Wang W, Wang H, Liu X, Duan Z, Ding P and Jin Z 2017 Frontiers of Information Technology {& Electronic Engineering 18 1180 [14] Wang L D, Ding P, Su Y B, Chen J, Zhang B C and Jin Z 2014 Chin. Phys. B23 38501 [15] Wang Q, Ding P, Su Y, Ding W, Muhammad A, Tang W and Jin Z 2016 J. Semicond.37 074003 [16] Shinohara K, Matsui T, Mimura T and Hiyamizu S 2001 IEEE MTT-S International Microwave Sympsoium Digest, Vol. 3, 2001, pp. 2159-2162 [17] Suemitsu T, Enoki T, Sano N, Tomizawa M and Ishii Y 1998 IEEE Trans. Electron Dev.45 2390 [18] Asif M, Peng D, Chen C, Xi W, Jan S and Zhi J 2019 J. Nanosci. Nanotechnol.19 2537 [19] Asif M, Peng D, Chen W, Jan S and Zhi J 2018 J. Nanoelectron. Optoelectron.13 856 [20] Zhong Y, Wang W, Yang J, Sun S, Chang M, Duan Z, Jin Z and Ding P 2020 Solid-State Electronics164 107613 [21] Zhong Y, Li K, Li M, Wang W, Sun S, Li H, Ding P and Jin Z 2018 Journal of Infrared and Millimeter Waves37 163 [22] Kim D H and del Alamo J A 2010 International Electron Devices Meeting, December 6-8, 2010, pp. 30.6.1-30.6.4 [23] Leuther A, Tessmann A and Doria P 2014 Proceedings of the 9$th European Microwave Integrated Circuits Conference, 2014, pp. 85-87 [24] Mei X B, Yoshida W and Lange M 2015 IEEE Electron Dev. Lett.36 327 [25] Takahashi T, Y Kawano and Makiyama K 2017 IEEE Trans. Electron Dev.64 89
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