Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

doi:10.1088/1674-1056/abb22f

Abstract The impact of supercritical CO₂/H₂O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150 ^°C for 3 h. The chamber was injected with CO₂ and H₂O at pressure of 3000 psi (1 psi≈6.895 kPa). Supercritical H₂O fluid has the characteristics of liquid H₂O and gaseous H₂O at the same time, that is, high penetration and high solubility. In addition, OH^- produced by ionization of H₂O can fill the nitrogen vacancy near the Si₃N₄/GaN/AlGaN interface caused by high temperature process. After supercritical CO₂/H₂O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO₂/H₂O treatment.

Keywords: MIS-HEMTs threshold-voltage instability gate stress temperature influence

Received: 08 May 2020
Revised: 31 July 2020
Accepted manuscript online: 25 August 2020

PACS:	71.55.Eq	(III-V semiconductors)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.50.-h	(Electronic transport phenomena in thin films)

Fund: Project supported by Shenzhen Science and Technology Innovation Committee (Grant Nos. ZDSYS201802061805105, JCYJ20190808155007550, QJSCX20170728102129176, and JCYJ20170810163407761) and the National Natural Science Foundation of China (Grant No. U1613215).

Corresponding Authors: ^†Corresponding author. E-mail: yfjin@pku.edu.cn

Cite this article:

Meihua Liu(刘美华), Zhangwei Huang(黄樟伟), Kuan-Chang Chang(张冠张), Xinnan Lin(林信南), Lei Li(李蕾), and Yufeng Jin(金玉丰) Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO₂/H₂O technology 2020 Chin. Phys. B 29 127101

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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO₂/H₂O technology