Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

doi:10.1088/1674-1056/25/4/048504

Abstract In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model.

Keywords: low noise amplifier HEMT high power microwave damage effect

Received: 02 December 2015
Revised: 26 December 2015
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).

Corresponding Authors: Yang Liu
E-mail: yyliu1987@163.com

Cite this article:

Yang Liu(刘阳), Chang-Chun Chai(柴常春), Yin-Tang Yang(杨银堂), Jing Sun(孙静), Zhi-Peng Li(李志鹏) Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave 2016 Chin. Phys. B 25 048504

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Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

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