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Chin. Phys. B, 2022, Vol. 31(5): 058506    DOI: 10.1088/1674-1056/ac6013

Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process

Bo Wang(王博)1,2, Peng Ding(丁芃)2, Rui-Ze Feng(封瑞泽)2, Shu-Rui Cao(曹书睿)2, Hao-Miao Wei(魏浩淼)2, Tong Liu(刘桐)2, Xiao-Yu Liu(刘晓宇)2, Hai-Ou Li(李海鸥)1,†, and Zhi Jin(金智)2,‡
1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  A double-recessed offset gate process technology for InP-based high electron mobility transistors (HEMTs) has been developed in this paper. Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized. Compared with single-recessed devices, the maximum drain-source current (ID,max) and maximum extrinsic transconductance (gm,max) of double-recessed devices decreased due to the increase in series resistances. However, in terms of RF performance, double-recessed HEMTs achieved higher maximum oscillation frequency (fMAX) by reducing drain output conductance (gds) and drain to gate capacitance (Cgd). In addition, further improvement of fMAX was observed by adjusting the gate offset of double-recessed devices. This can be explained by suppressing the ratio of Cgd to source to gate capacitance (Cgs) by extending drain-side recess length (Lrd). Compared with the single-recessed HEMTs, the fMAX of double-recessed offset gate HEMTs was increased by about 20%.
Keywords:  InP      HEMT      maximum oscillation frequency (fMAX)      double-recess      offset gate  
Received:  15 January 2022      Revised:  11 March 2022      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.-z (Semiconductor devices)  
Fund: This work is supported by the National Natural Science Foundation of China (Grant Nos.61874036,62174041,and 61434006),the Open Project of State Key Laboratory of ASIC and System (Grant No.KVH1233021),the Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components (Grant No.FHR-JS-201909007),the Guangxi Innovation Research Team Project (Grant Nos.2018GXNSFGA281004 and 2018GXNSFBA281152),the Guangxi Innovation Driven Development Special Fund Project (Grant No.AA19254015),and the Guangxi Key Laboratory of Precision Navigation Technology and Application Project (Grant Nos.DH201906,DH202020,and DH202001).
Corresponding Authors:  Hai-Ou Li,;Zhi Jin,     E-mail:;
About author:  2022-3-23

Cite this article: 

Bo Wang(王博), Peng Ding(丁芃), Rui-Ze Feng(封瑞泽), Shu-Rui Cao(曹书睿), Hao-Miao Wei(魏浩淼), Tong Liu(刘桐), Xiao-Yu Liu(刘晓宇), Hai-Ou Li(李海鸥), and Zhi Jin(金智) Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process 2022 Chin. Phys. B 31 058506

[1] Liu Y, Zhang B, Feng Y, Zhao X, Wang J, Ji D, Yang Y and Fan Y 20202 IEEE MTT-S International Wireless Symposium (IWS), 20-23 Sept. 2020, pp. 1-3
[2] Hamada H, Tsutsumi T, Matsuzaki H, Sugiyama H and Nosaka H 2020 IEEE/MTT-S International Microwave Symposium (IMS), 4-6 Aug. 2020, pp. 1121-1124
[3] Hamada H, Tsutsumi T, Itami G, Sugiyama H, Matsuzaki H, Okada K and Nosaka H 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 3-6 Nov. 2019, pp. 1-4
[4] Lai R, Mei X B, Deal W R, Yoshida W, Kim Y M, Liu P H, Lee J, Uyeda J, Radisic V, Lange M, Gaier T, Samoska L and Fung A 2007 IEEE International Electron Devices Meeting, 10-12 Dec. 2007, pp. 609-611
[5] Kim D, Alamo J A d, Chen P, Wonill H, Urteaga M and Brar B 2020 International Electron Devices Meeting, 6-8 Dec. 2010, pp. 30.6.1-30.6.4
[6] Tessmann A, Leuther A, Massler H and Seelmann-Eggebert M 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 14-17 Oct. 2012, pp. 1-4
[7] Leuther A, Tessmann A, Doria P, Ohlrogge M, Seelmann-Eggebert M, Maßler H, Schlechtweg M and Ambacher O 2014 9th European Microwave Integrated Circuit Conference, 6-7 Oct. 2014, pp. 84-87
[8] Mei X, Yoshida W, Lange M, Lee J, Zhou J, Liu P H, Leong K, Zamora A, Padilla J, Sarkozy S, Lai R and Deal W R 2015 IEEE Electron Device Lett. 36 327
[9] Takahashi T, Kawano Y, Makiyama K, Shiba S, Sato M, Nakasha Y and Hara N 2017 IEEE Transactions on Electron Devices 64 89
[10] Yeon S, Park M, Choi J and Seo K 2007 IEEE International Electron Devices Meeting, 10-12 Dec. 2007, pp. 613-616
[11] Yun D Y, Jo H B, Son S W, Baek J M, Lee J H, Kim T W, Kim D H, Tsutsumi T, Sugiyama H and Matsuzaki H 2018 IEEE Electron Device Lett. 39 1844
[12] Jo H B, Baek J M, Yun D Y, Son S W, Lee J H, Kim T W, Kim D H, Tsutsumi T, Sugiyama H and Matsuzaki H 2018 IEEE Electron Device Lett. 39 1640
[13] Zhong Y H, Sun S X, Wong W B, Wang H L, Liu X M, Duan Z Y, Ding P and Jin Z 2017 Front.Inform. Techn. Electron. Eng. 18 1180
[14] Feng R, Wang B, Cao S, Liu T, Su Y, Ding W, Ding P and Jin Z 2022 Chin. Phys. B 31 018505
[15] Tong Z H, Ding P, Su Y B, Wang D H and Jin Z 2021 Chin. Phys. B 30 018501
[16] Yoshida T, Kobayashi K, Otsuji T and Suemitsu T 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 16-20 Sept. 2013, pp. 115-118
[17] Huang J C, Jackson G, Shanfield S, Hoke W, Lyman P, Atwood D, Saledas P, Schindler M, Tajima Y, Platzker A, Masse D and Statz H 1991 IEEE MTT-S International Microwave Symposium Digest, 10-14 July 1991, pp. 713-716 vol. 2
[18] Kim D H and Alamo J A d 2008 IEEE Transactions on Electron Devices 55 2546
[19] Chen K J, Enoki T, Maezawa K, Arai K and Yamamoto M 1996 IEEE Transactions on Electron Devices 43 252
[20] Liu G M, Chang H D, Sun B and Liu H G 2013 Chin. Phys. Lett. 30 087304
[21] del Alamo J A 2011 Nature 479 317
[22] Hur K Y, McTaggart R A, LeBlanc B W, Hoke W E, Lemonias P J, Miller A B, Kazior T E and Aucoin L M GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995, 29 Oct.-1 Nov. 1995, pp. 101-104
[23] Liu L, Alt A R, Benedickter H and Bolognesi C R 2012 IEEE Electron Device Lett. 33 209
[24] Wang L D, Ding P, Su Y B, Chen J, Zhang B C and Jin Z 2014 Chin. Phys. B 23 038501
[25] Ding P, Chen C, Asif M, Wang X, Niu J, Yang F, Ding W, Su Y, Wang D and Jin Z 2018 IEEE Journal of the Electron Devices Society 6 49
[26] Samnouni M, Wichmann N, Wallart X, Coinon C, Lepilliet S and Bollaert S 2021 IEEE Transactions on Electron Devices 68 4289
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