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Other articles related with "AlGaN/GaN"：
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98506 |
Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波) |
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Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode |
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Chin. Phys. B
2023 Vol.32 (9): 98506-098506
[Abstract]
(121)
[HTML 1 KB]
[PDF 1360 KB]
(157)
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87301 |
Tao Zhang(张涛), Ruo-Han Li(李若晗), Kai Su(苏凯), Hua-Ke Su(苏华科), Yue-Guang Lv(吕跃广), Sheng-Rui Xu(许晟瑞), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes |
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Chin. Phys. B
2023 Vol.32 (8): 87301-087301
[Abstract]
(146)
[HTML 0 KB]
[PDF 848 KB]
(231)
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37201 |
Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军) |
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Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate |
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Chin. Phys. B
2023 Vol.32 (3): 37201-037201
[Abstract]
(278)
[HTML 1 KB]
[PDF 1115 KB]
(232)
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127701 |
Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平) |
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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator |
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Chin. Phys. B
2022 Vol.31 (12): 127701-127701
[Abstract]
(252)
[HTML 0 KB]
[PDF 1297 KB]
(54)
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117105 |
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications |
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Chin. Phys. B
2022 Vol.31 (11): 117105-117105
[Abstract]
(293)
[HTML 1 KB]
[PDF 831 KB]
(92)
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117301 |
Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华) |
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Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress |
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Chin. Phys. B
2022 Vol.31 (11): 117301-117301
[Abstract]
(305)
[HTML 1 KB]
[PDF 916 KB]
(36)
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68501 |
Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate |
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Chin. Phys. B
2022 Vol.31 (6): 68501-068501
[Abstract]
(377)
[HTML 1 KB]
[PDF 1465 KB]
(104)
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57301 |
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment |
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Chin. Phys. B
2022 Vol.31 (5): 57301-057301
[Abstract]
(369)
[HTML 1 KB]
[PDF 2309 KB]
(147)
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58505 |
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications |
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Chin. Phys. B
2022 Vol.31 (5): 58505-058505
[Abstract]
(384)
[HTML 1 KB]
[PDF 1059 KB]
(135)
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27103 |
Pengfei Wang(王鹏飞), Minhan Mi(宓珉瀚), Meng Zhang(张濛), Jiejie Zhu(祝杰杰), Yuwei Zhou(周雨威), Jielong Liu(刘捷龙), Sijia Liu(刘思佳), Ling Yang(杨凌), Bin Hou(侯斌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications |
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Chin. Phys. B
2022 Vol.31 (2): 27103-027103
[Abstract]
(497)
[HTML 1 KB]
[PDF 1604 KB]
(179)
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27301 |
Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching |
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Chin. Phys. B
2022 Vol.31 (2): 27301-027301
[Abstract]
(469)
[HTML 1 KB]
[PDF 3554 KB]
(146)
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128102 |
Yue-Bo Liu(柳月波), Hong-Hui Liu(刘红辉), Jun-Yu Shen(沈俊宇), Wan-Qing Yao(姚婉青), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君) |
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Distribution of donor states on the surfaceof AlGaN/GaN heterostructures |
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Chin. Phys. B
2021 Vol.30 (12): 128102-128102
[Abstract]
(424)
[HTML 0 KB]
[PDF 694 KB]
(47)
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117302 |
Yue-Bo Liu(柳月波), Jun-Yu Shen(沈俊宇), Jie-Ying Xing(邢洁莹), Wan-Qing Yao(姚婉青), Hong-Hui Liu(刘红辉), Ya-Qiong Dai(戴雅琼), Long-Kun Yang(杨隆坤), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君) |
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Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation |
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Chin. Phys. B
2021 Vol.30 (11): 117302-117302
[Abstract]
(582)
[HTML 0 KB]
[PDF 1845 KB]
(27)
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108502 |
Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞) |
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Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (10): 108502-108502
[Abstract]
(463)
[HTML 1 KB]
[PDF 2657 KB]
(139)
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87102 |
Sheng Wu(武盛), Minhan Mi(宓珉瀚), Xiaohua Ma(马晓华), Ling Yang(杨凌), Bin Hou(侯斌), and Yue Hao(郝跃) |
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High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz |
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Chin. Phys. B
2021 Vol.30 (8): 87102-087102
[Abstract]
(557)
[HTML 1 KB]
[PDF 1074 KB]
(178)
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57302 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃) |
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Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT |
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Chin. Phys. B
2021 Vol.30 (5): 57302-057302
[Abstract]
(606)
[HTML 1 KB]
[PDF 977 KB]
(160)
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40502 |
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (4): 40502-
[Abstract]
(537)
[HTML 1 KB]
[PDF 3285 KB]
(121)
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107302 |
Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃) |
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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments |
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Chin. Phys. B
2020 Vol.29 (10): 107302-
[Abstract]
(584)
[HTML 1 KB]
[PDF 1123 KB]
(78)
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87305 |
Sheng Hu(胡晟), Ling Yang(杨凌), Min-Han Mi(宓珉瀚), Bin Hou(侯斌), Sheng Liu(刘晟), Meng Zhang(张濛), Mei Wu(武玫), Qing Zhu(朱青), Sheng Wu(武盛), Yang Lu(卢阳), Jie-Jie Zhu(祝杰杰), Xiao-Wei Zhou(周小伟), Ling Lv(吕玲), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures |
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Chin. Phys. B
2020 Vol.29 (8): 87305-087305
[Abstract]
(609)
[HTML 0 KB]
[PDF 744 KB]
(129)
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87304 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃) |
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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators |
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Chin. Phys. B
2020 Vol.29 (8): 87304-087304
[Abstract]
(593)
[HTML 0 KB]
[PDF 1089 KB]
(122)
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47104 |
Min-Han Mi(宓珉瀚), Sheng Wu(武盛), Ling Yang(杨凌), Yun-Long He(何云龙), Bin Hou(侯斌), Meng Zhang(张濛), Li-Xin Guo(郭立新), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT |
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Chin. Phys. B
2020 Vol.29 (4): 47104-047104
[Abstract]
(657)
[HTML 1 KB]
[PDF 1157 KB]
(177)
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107301 |
Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer |
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Chin. Phys. B
2019 Vol.28 (10): 107301-107301
[Abstract]
(771)
[HTML 1 KB]
[PDF 1005 KB]
(261)
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67304 |
Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃) |
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (6): 67304-067304
[Abstract]
(829)
[HTML 1 KB]
[PDF 591 KB]
(194)
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47302 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿) |
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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer |
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Chin. Phys. B
2019 Vol.28 (4): 47302-047302
[Abstract]
(744)
[HTML 1 KB]
[PDF 496 KB]
(232)
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27302 |
Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂) |
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Theoretical analytic model for RESURF AlGaN/GaN HEMTs |
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Chin. Phys. B
2019 Vol.28 (2): 27302-027302
[Abstract]
(1128)
[HTML 1 KB]
[PDF 504 KB]
(264)
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27301 |
Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor |
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Chin. Phys. B
2019 Vol.28 (2): 27301-027301
[Abstract]
(744)
[HTML 1 KB]
[PDF 507 KB]
(236)
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97308 |
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Characteristics and threshold voltage model of GaN-based FinFET with recessed gate |
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Chin. Phys. B
2018 Vol.27 (9): 97308-097308
[Abstract]
(756)
[HTML 1 KB]
[PDF 804 KB]
(223)
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78503 |
Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平) |
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Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2018 Vol.27 (7): 78503-078503
[Abstract]
(864)
[HTML 1 KB]
[PDF 1160 KB]
(167)
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47307 |
Ting-Ting Liu(刘婷婷), Kai Zhang(张凯), Guang-Run Zhu(朱广润), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Xin-Xin Yu(郁鑫鑫), Tang-Sheng Chen(陈堂胜) |
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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs |
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Chin. Phys. B
2018 Vol.27 (4): 47307-047307
[Abstract]
(666)
[HTML 1 KB]
[PDF 799 KB]
(343)
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127102 |
Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰) |
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Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (12): 127102-127102
[Abstract]
(584)
[HTML 0 KB]
[PDF 495 KB]
(197)
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98504 |
Jianfei Li(李建飞), Yuanjie Lv(吕元杰), Changfu Li(李长富), Ziwu Ji(冀子武), Zhiyong Pang(庞智勇), Xiangang Xu(徐现刚), Mingsheng Xu(徐明升) |
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Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs |
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Chin. Phys. B
2017 Vol.26 (9): 98504-098504
[Abstract]
(616)
[HTML 0 KB]
[PDF 937 KB]
(340)
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47305 |
Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇) |
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A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates |
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Chin. Phys. B
2017 Vol.26 (4): 47305-047305
[Abstract]
(765)
[HTML 1 KB]
[PDF 684 KB]
(434)
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37201 |
Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平) |
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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (3): 37201-037201
[Abstract]
(684)
[HTML 1 KB]
[PDF 311 KB]
(338)
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17304 |
Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2017 Vol.26 (1): 17304-017304
[Abstract]
(689)
[HTML 1 KB]
[PDF 450 KB]
(475)
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127305 |
Wei Mao(毛维), Ju-Sheng Fan(范举胜), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate |
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Chin. Phys. B
2016 Vol.25 (12): 127305-127305
[Abstract]
(968)
[HTML 1 KB]
[PDF 514 KB]
(517)
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117305 |
Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment |
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Chin. Phys. B
2016 Vol.25 (11): 117305-117305
[Abstract]
(865)
[HTML 1 KB]
[PDF 1879 KB]
(432)
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108504 |
Chong Wang(王冲), Meng-Di Zhao(赵梦荻), Yun-Long He(何云龙), Xue-Feng Zheng(郑雪峰), Kun Zhang(张坤), Xiao-Xiao Wei(魏晓晓), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT |
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Chin. Phys. B
2016 Vol.25 (10): 108504-108504
[Abstract]
(633)
[HTML 1 KB]
[PDF 655 KB]
(317)
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87308 |
Jia-Qi Zhang(张家琦), Lei Wang(王磊), Liu-An Li(李柳暗), Qing-Peng Wang(王青鹏), Ying Jiang(江滢), Hui-Chao Zhu(朱慧超), Jin-Ping Ao(敖金平) |
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Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate |
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Chin. Phys. B
2016 Vol.25 (8): 87308-087308
[Abstract]
(715)
[HTML 1 KB]
[PDF 1061 KB]
(330)
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87304 |
Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃) |
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Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures |
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Chin. Phys. B
2016 Vol.25 (8): 87304-087304
[Abstract]
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[PDF 865 KB]
(411)
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67305 |
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Li-Xiang Chen(陈丽香), Yan-Rong Cao(曹艳荣), Yue Hao(郝跃) |
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Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure |
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Chin. Phys. B
2016 Vol.25 (6): 67305-067305
[Abstract]
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[PDF 508 KB]
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27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27303-027303
[Abstract]
(945)
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[PDF 496 KB]
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17303 |
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
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Chin. Phys. B
2016 Vol.25 (1): 17303-017303
[Abstract]
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117307 |
Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇) |
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AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation |
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Chin. Phys. B
2015 Vol.24 (11): 117307-117307
[Abstract]
(658)
[HTML 1 KB]
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117305 |
Luo Jun (罗俊), Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Yang Xiao-Lei (杨晓蕾), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors |
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Chin. Phys. B
2015 Vol.24 (11): 117305-117305
[Abstract]
(760)
[HTML 1 KB]
[PDF 339 KB]
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117103 |
Yang Ming (杨铭), Lin Zhao-Jun (林兆军), Zhao Jing-Tao (赵景涛), Wang Yu-Tang (王玉堂), Li Zhi-Yuan (李志远), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红) |
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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors |
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Chin. Phys. B
2015 Vol.24 (11): 117103-117103
[Abstract]
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(286)
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107305 |
Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Lu Yang (卢阳), Zhao Bo-Chao (赵博超), Zhang Hong-He (张宏鹤), Zhang Meng (张濛), Cao Meng-Yi (曹梦逸), Hao Yue (郝跃) |
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A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT |
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Chin. Phys. B
2015 Vol.24 (10): 107305-107305
[Abstract]
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97303 |
Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬) |
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Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode |
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Chin. Phys. B
2015 Vol.24 (9): 97303-097303
[Abstract]
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48503 |
Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2015 Vol.24 (4): 48503-048503
[Abstract]
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27101 |
Ma Xiao-Hua (马晓华), Zhang Ya-Man (张亚嫚), Wang Xin-Hua (王鑫华), Yuan Ting-Ting (袁婷婷), Pang Lei (庞磊), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values |
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Chin. Phys. B
2015 Vol.24 (2): 27101-027101
[Abstract]
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27302 |
Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Chen Yong-He (陈永和), Kang Di (康迪), Zhang Jian-Kun (张建坤), Wang Chong (王冲), Mo Jiang-Hui (默江辉), Li Liang (李亮), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation |
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Chin. Phys. B
2015 Vol.24 (2): 27302-027302
[Abstract]
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127304 |
Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇) |
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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method |
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Chin. Phys. B
2014 Vol.23 (12): 127304-127304
[Abstract]
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106106 |
Huang Cheng-Cheng (黄呈橙), Zhang Xia (张霞), Xu Fu-Jun (许福军), Xu Zheng-Yu (许正昱), Chen Guang (陈广), Yang Zhi-Jian (杨志坚), Tang Ning (唐宁), Wang Xin-Qiang (王新强), Shen Bo (沈波) |
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Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template |
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Chin. Phys. B
2014 Vol.23 (10): 106106-106106
[Abstract]
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[HTML 1 KB]
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(488)
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107303 |
Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain |
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Chin. Phys. B
2014 Vol.23 (10): 107303-107303
[Abstract]
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[HTML 1 KB]
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97307 |
Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range |
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Chin. Phys. B
2014 Vol.23 (9): 97307-097307
[Abstract]
(712)
[HTML 1 KB]
[PDF 315 KB]
(1544)
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97305 |
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (9): 97305-097305
[Abstract]
(584)
[HTML 1 KB]
[PDF 1027 KB]
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97308 |
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate |
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Chin. Phys. B
2014 Vol.23 (9): 97308-097308
[Abstract]
(735)
[HTML 1 KB]
[PDF 1081 KB]
(769)
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87201 |
Cao Meng-Yi (曹梦逸), Lu Yang (卢阳), Wei Jia-Xing (魏家行), Chen Yong-He (陈永和), Li Wei-Jun (李卫军), Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
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An improved EEHEMT model for kink effect on AlGaN/GaN HEMT |
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Chin. Phys. B
2014 Vol.23 (8): 87201-087201
[Abstract]
(821)
[HTML 1 KB]
[PDF 446 KB]
(1402)
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57301 |
Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃) |
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Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique |
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Chin. Phys. B
2014 Vol.23 (5): 57301-057301
[Abstract]
(533)
[HTML 1 KB]
[PDF 386 KB]
(898)
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38403 |
Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) |
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (3): 38403-038403
[Abstract]
(692)
[HTML 1 KB]
[PDF 1317 KB]
(885)
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20701 |
Liu Yu-An (刘宇安), Zhuang Yi-Qi (庄奕琪), Ma Xiao-Hua (马晓华), Du Ming (杜鸣), Bao Jun-Lin (包军林), Li Cong (李聪) |
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A unified drain current 1/f noise model for GaN-based high electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (2): 20701-020701
[Abstract]
(644)
[HTML 1 KB]
[PDF 306 KB]
(652)
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17303 |
Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (1): 17303-017303
[Abstract]
(559)
[HTML 1 KB]
[PDF 318 KB]
(748)
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118504 |
Xiong Jian-Yong (熊建勇), Zhao Fang (赵芳), Fan Guang-Han (范广涵), Xu Yi-Qin (许毅钦), Liu Xiao-Ping (刘小平), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
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Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier |
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Chin. Phys. B
2013 Vol.22 (11): 118504-118504
[Abstract]
(721)
[HTML 1 KB]
[PDF 1726 KB]
(556)
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117306 |
Tan Ren-Bing (谭仁兵), Qin Hua (秦华), Zhang Xiao-Yu (张晓渝), Xu Wen (徐文) |
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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (11): 117306-117306
[Abstract]
(601)
[HTML 1 KB]
[PDF 342 KB]
(959)
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117307 |
Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
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Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2013 Vol.22 (11): 117307-117307
[Abstract]
(493)
[HTML 1 KB]
[PDF 343 KB]
(497)
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107303 |
Chen Wei-Wei (陈伟伟), Ma Xiao-Hua (马晓华), Hou Bin (侯斌), Zhu Jie-Jie (祝杰杰), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress |
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Chin. Phys. B
2013 Vol.22 (10): 107303-107303
[Abstract]
(658)
[HTML 1 KB]
[PDF 382 KB]
(688)
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77305 |
Wang Jian-Xia (王建霞), Yang Shao-Yan (杨少延), Wang Jun (王俊), Liu Gui-Peng (刘贵鹏), Li Zhi-Wei (李志伟), Li Hui-Jie (李辉杰), Jin Dong-Dong (金东东), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
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Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells |
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Chin. Phys. B
2013 Vol.22 (7): 77305-077305
[Abstract]
(738)
[HTML 1 KB]
[PDF 419 KB]
(645)
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77102 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军) |
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Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode |
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Chin. Phys. B
2013 Vol.22 (7): 77102-077102
[Abstract]
(829)
[HTML 1 KB]
[PDF 270 KB]
(1486)
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68503 |
Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO |
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Chin. Phys. B
2013 Vol.22 (6): 68503-068503
[Abstract]
(694)
[HTML 1 KB]
[PDF 359 KB]
(1266)
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67104 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪) |
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Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2013 Vol.22 (6): 67104-067104
[Abstract]
(693)
[HTML 1 KB]
[PDF 858 KB]
(655)
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57302 |
Tian Wu (田武), Yan Wei-Yi (鄢伟一), Xiong Hui (熊晖), Dai Jian-Nan (戴江南), Fang Yan-Yan (方妍妍), Wu Zhi-Hao (吴志浩), Yu Chen-Hui (余晨辉), Chen Chang-Qin (陈长清) |
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Effects of polarization on intersubband transitions of AlxGa1-xN/GaN multi-quantum wells |
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Chin. Phys. B
2013 Vol.22 (5): 57302-057302
[Abstract]
(600)
[HTML 1 KB]
[PDF 396 KB]
(650)
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26103 |
Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng |
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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient |
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Chin. Phys. B
2013 Vol.22 (2): 26103-026103
[Abstract]
(1057)
[HTML 1 KB]
[PDF 1199 KB]
(1805)
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26102 |
Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇) |
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Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells |
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Chin. Phys. B
2013 Vol.22 (2): 26102-026102
[Abstract]
(855)
[HTML 1 KB]
[PDF 372 KB]
(774)
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126102 |
Tian Ben-Lang (田本朗), Chen Chao (陈超), Li Yan-Rong (李言荣), Zhang Wan-Li (张万里), Liu Xing-Zhao (刘兴钊) |
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Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
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Chin. Phys. B
2012 Vol.21 (12): 126102-126102
[Abstract]
(1023)
[HTML 1 KB]
[PDF 411 KB]
(830)
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128501 |
Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇) |
| |
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Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application |
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Chin. Phys. B
2012 Vol.21 (12): 128501-128501
[Abstract]
(1131)
[HTML 1 KB]
[PDF 641 KB]
(2101)
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108503 |
Fu Li-Hua (付立华), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Zhang Rongm (张荣), Zheng You-Dou (郑有炓), Wei Ke (魏珂), Liu Xin-Yu (刘新宇) |
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High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2012 Vol.21 (10): 108503-108503
[Abstract]
(1202)
[HTML 1 KB]
[PDF 178 KB]
(932)
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97104 |
Lü Yuan-Jie (吕元杰), Lin Zhao-Jun (林兆军), Yu Ying-Xia (于英霞), Meng Ling-Guo (孟令国), Cao Zhi-Fang (曹芝芳), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国) |
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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics |
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Chin. Phys. B
2012 Vol.21 (9): 97104-097104
[Abstract]
(1380)
[HTML 1 KB]
[PDF 148 KB]
(899)
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87305 |
Wang Zhi-Gang (汪志刚), Chen Wan-Jun (陈万军), Zhang Jing (张竞), Zhang Bo (张波), Li Zhao-Ji (李肇基 ) |
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Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection |
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Chin. Phys. B
2012 Vol.21 (8): 87305-087305
[Abstract]
(1432)
[HTML 1 KB]
[PDF 5129 KB]
(873)
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86105 |
Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng |
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An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage |
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Chin. Phys. B
2012 Vol.21 (8): 86105-086105
[Abstract]
(1401)
[HTML 1 KB]
[PDF 1274 KB]
(1636)
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78503 |
Chen Chao (陈超), Tian Ben-Lang (田本朗), Liu Xing-Zhao (刘兴钊), Dai Li-Ping (戴丽萍), Deng Xin-Wu (邓新武), Chen Yuan-Fu (陈远富 ) |
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The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
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Chin. Phys. B
2012 Vol.21 (7): 78503-078503
[Abstract]
(1415)
[HTML 1 KB]
[PDF 123 KB]
(883)
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77304 |
Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) |
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Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique |
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Chin. Phys. B
2012 Vol.21 (7): 77304-077304
[Abstract]
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(1195)
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77103 |
Zhang Wei(张伟), Xue Jun-Shuai(薛军帅), Zhou Xiao-Wei (周晓伟), Zhang Yue(张月), Liu Zi-Yang(刘子阳), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer |
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Chin. Phys. B
2012 Vol.21 (7): 77103-077103
[Abstract]
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[PDF 3068 KB]
(1292)
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57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
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Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
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Chin. Phys. B
2012 Vol.21 (5): 57201-057201
[Abstract]
(1371)
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[PDF 562 KB]
(1474)
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37104 |
LŰ Ling(吕玲), Zhang Jin-Cheng(张进成), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Zhang Wei(张伟), Bi Zhi-Wei(毕志伟), Zhang Yue(张月), and Hao Yue(郝跃) |
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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (3): 37104-037104
[Abstract]
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[PDF 330 KB]
(1707)
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97701 |
Liu Zi-Yang(刘子扬), Zhang Jin-Cheng(张进成), Duan Huan-Tao(段焕涛), Xue Jun-Shuai(薛军帅),Lin Zhi-Yu(林志宇), Ma Jun-Cai(马俊彩), Xue Xiao-Yong(薛晓咏), and Hao Yue(郝跃) |
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Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures |
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Chin. Phys. B
2011 Vol.20 (9): 97701-097701
[Abstract]
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[PDF 222 KB]
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97106 |
Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
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Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts |
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Chin. Phys. B
2011 Vol.20 (9): 97106-097106
[Abstract]
(1542)
[HTML 1 KB]
[PDF 151 KB]
(873)
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67304 |
Ma Xiao-Hua(马晓华), Ma Ji-Gang(马骥刚), Yang Li-Yuan(杨丽媛), He Qiang(贺强), Jiao Ying(焦颖), Ma Ping(马平), and Hao Yue(郝跃) |
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Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress |
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Chin. Phys. B
2011 Vol.20 (6): 67304-067304
[Abstract]
(1521)
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[PDF 450 KB]
(1973)
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67303 |
Liu Fang(刘芳), Qin Zhi-Xin(秦志新), Xu Fu-Jun(许福军), Zhao Sheng(赵胜), Kang Xiang-Ning(康香宁), Shen Bo(沈波), and Zhang Guo-Yi(张国义) |
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Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN |
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Chin. Phys. B
2011 Vol.20 (6): 67303-067303
[Abstract]
(1602)
[HTML 0 KB]
[PDF 279 KB]
(1843)
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58501 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
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Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor |
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Chin. Phys. B
2011 Vol.20 (5): 58501-058501
[Abstract]
(1472)
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[PDF 284 KB]
(840)
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47105 |
Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts |
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Chin. Phys. B
2011 Vol.20 (4): 47105-047105
[Abstract]
(1346)
[HTML 1 KB]
[PDF 329 KB]
(806)
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36106 |
Cheng Zhi-Qun(程知群), Hu Sha(胡莎), Liu Jun(刘军), and Zhang Qi-Jun |
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Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network |
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Chin. Phys. B
2011 Vol.20 (3): 36106-036106
[Abstract]
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[HTML 1 KB]
[PDF 316 KB]
(1341)
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27304 |
Ma Xiao-Hua(马晓华), Pan Cai-Yuan(潘才渊), Yang Li-Yuan(杨丽媛), Yu Hui-You(于惠游), Yang Ling(杨凌), Quan Si(全思), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths |
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Chin. Phys. B
2011 Vol.20 (2): 27304-027304
[Abstract]
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[HTML 1 KB]
[PDF 662 KB]
(1388)
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27303 |
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
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Chin. Phys. B
2011 Vol.20 (2): 27303-027303
[Abstract]
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[HTML 1 KB]
[PDF 838 KB]
(1055)
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127305 |
Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses |
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Chin. Phys. B
2011 Vol.20 (12): 127305-127305
[Abstract]
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[HTML 1 KB]
[PDF 271 KB]
(1236)
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117302 |
Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) |
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High temperature characteristics of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2011 Vol.20 (11): 117302-117302
[Abstract]
(1328)
[HTML 1 KB]
[PDF 359 KB]
(1796)
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18101 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis |
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Chin. Phys. B
2011 Vol.20 (1): 18101-018101
[Abstract]
(1712)
[HTML 1 KB]
[PDF 634 KB]
(1102)
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77303 |
Bi Zhi-Wei(毕志伟), Feng Qian(冯倩), Hao Yue(郝跃), Wang Dang-Hui(王党会), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Quan Si(全思), and Xu Sheng-Rui(许晟瑞) |
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AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition |
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Chin. Phys. B
2010 Vol.19 (7): 77303-077303
[Abstract]
(1715)
[HTML 0 KB]
[PDF 662 KB]
(866)
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47301 |
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) |
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Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (4): 47301-047301
[Abstract]
(1531)
[HTML 1 KB]
[PDF 409 KB]
(1459)
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107305 |
Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) |
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Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric |
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Chin. Phys. B
2010 Vol.19 (10): 107305-107305
[Abstract]
(1348)
[HTML 1 KB]
[PDF 484 KB]
(1554)
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17306 |
Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅) |
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Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (1): 17306-017306
[Abstract]
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[HTML 1 KB]
[PDF 694 KB]
(1433)
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3980 |
Zhao Jian-Zhi(赵建芝), Lin Zhao-Jun(林兆军), Timothy D Corrigan, Zhang Yu(张宇), Lü Yuan-Jie(吕元杰), Lu Wu(鲁武), Wang Zhan-Guo(王占国), and Chen Hong(陈弘) |
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Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures |
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Chin. Phys. B
2009 Vol.18 (9): 3980-3984
[Abstract]
(2020)
[HTML 1 KB]
[PDF 179 KB]
(1888)
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3014 |
Feng Qian(冯倩), Tian Yuan(田园), Bi Zhi-Wei(毕志伟), Yue Yuan-Zheng(岳远征), Ni Jin-Yu(倪金玉), Zhang Jin-Cheng(张进成), Hao Yue(郝跃), and Yang Lin-An(杨林安) |
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The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment |
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Chin. Phys. B
2009 Vol.18 (7): 3014-3017
[Abstract]
(1509)
[HTML 1 KB]
[PDF 714 KB]
(986)
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2998 |
Zhang Jin-Cheng(张进成), Zheng Peng-Tian(郑鹏天), Zhang Juan(张娟), Xu Zhi-Hao(许志豪), and Hao Yue(郝跃) |
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Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures |
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Chin. Phys. B
2009 Vol.18 (7): 2998-3001
[Abstract]
(1417)
[HTML 1 KB]
[PDF 1804 KB]
(895)
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1601 |
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华) |
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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2009 Vol.18 (4): 1601-1608
[Abstract]
(1633)
[HTML 1 KB]
[PDF 1865 KB]
(1038)
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5457 |
Xu Zhi-Hao(许志豪), Zhang Jin-Cheng(张进成), Zhang Zhong-Fen(张忠芬), Zhu Qing-Wei(朱庆玮), Duan Huan-Tao(段焕涛), and Hao Yue(郝跃) |
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The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures |
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Chin. Phys. B
2009 Vol.18 (12): 5457-5461
[Abstract]
(1632)
[HTML 1 KB]
[PDF 1716 KB]
(894)
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2689 |
Zhang Jin-Feng(张金风), Mao Wei(毛维), Zhang Jin-Cheng(张进城), and Hao Yue(郝跃) |
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The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures |
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Chin. Phys. B
2008 Vol.17 (7): 2689-2695
[Abstract]
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[HTML 0 KB]
[PDF 743 KB]
(1263)
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1405 |
Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华) |
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A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress |
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Chin. Phys. B
2008 Vol.17 (4): 1405-1409
[Abstract]
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[HTML 1 KB]
[PDF 291 KB]
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3494 |
Cheng Zhi-Qun(程知群), Cai Yong(蔡勇), Liu Jie(刘杰), Zhou Yu-Gang(周玉刚), Lau Kei May, and Chen J. Kevin |
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MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs |
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Chin. Phys. B
2007 Vol.16 (11): 3494-3497
[Abstract]
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[HTML 1 KB]
[PDF 519 KB]
(860)
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1060 |
Zhang Jin-Feng (张金风), Wang Chong (王冲), Zhang Jin-Cheng (张进城), Hao Yue (郝 跃) |
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Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures |
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Chin. Phys. B
2006 Vol.15 (5): 1060-1066
[Abstract]
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[HTML 1 KB]
[PDF 357 KB]
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636 |
Chang Yuan-Cheng (常远程), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures |
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Chin. Phys. B
2006 Vol.15 (3): 636-640
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