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Other articles related with "bipolar"：
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47701 |
Wushuang Han(韩无双), Kewei Liu(刘可为), Jialin Yang(杨佳霖), Yongxue Zhu(朱勇学), Zhen Cheng(程祯), Xing Chen(陈星), Binghui Li(李炳辉), Lei Liu(刘雷), and Dezhen Shen(申德振) |
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BaTiO3/p-GaN/Au self-driven UV photodetector with bipolar photocurrent controlled by ferroelectric polarization |
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Chin. Phys. B
2024 Vol.33 (4): 47701-047701
[Abstract]
(49)
[HTML 1 KB]
[PDF 1700 KB]
(11)
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16104 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect |
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Chin. Phys. B
2024 Vol.33 (1): 16104-16104
[Abstract]
(73)
[HTML 0 KB]
[PDF 2002 KB]
(12)
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128505 |
Yuehao Zhao(赵月豪), Haoran Sun(孙浩然), Zhe Sheng(盛喆), David Wei Zhang(张卫),Peng Zhou(周鹏), and Zengxing Zhang(张增星) |
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Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics |
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Chin. Phys. B
2023 Vol.32 (12): 128505-128505
[Abstract]
(93)
[HTML 0 KB]
[PDF 2070 KB]
(81)
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128503 |
Yi-Fan Wu(吴毅帆), Gao-Qiang Deng(邓高强), Chen Tan(谭琛), Shi-Wei Liang(梁世维), and Jun Wang(王俊) |
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Improving dynamic characteristics for IGBTs by using interleaved trench gate |
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Chin. Phys. B
2023 Vol.32 (12): 128503-128503
[Abstract]
(106)
[HTML 0 KB]
[PDF 1607 KB]
(33)
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127103 |
Miao-Miao Chen(陈苗苗), Sheng-Shi Li(李胜世), Wei-Xiao Ji(纪维霄), and Chang-Wen Zhang(张昌文) |
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Two-dimensional transition metal halide PdX2(X= F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors |
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Chin. Phys. B
2023 Vol.32 (12): 127103-127103
[Abstract]
(104)
[HTML 0 KB]
[PDF 3743 KB]
(96)
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108502 |
Zi-Miao Zhao(赵梓淼), Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Nai-Yun Tang(汤乃云), Jiang-Nan Liu(刘江南), Xian-Ting Liu(刘先婷), Xuan-Lin Li(李宣霖), Xin-Fu Pan(潘信甫), Min Tang(唐敏), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东) |
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Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate-drain underlap |
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Chin. Phys. B
2023 Vol.32 (10): 108502-108502
[Abstract]
(77)
[HTML 0 KB]
[PDF 1029 KB]
(16)
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98503 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yahui Feng(冯亚辉), Yinong Liu(刘以农), Jinxin Zhang(张晋新), Jun Fu(付军), and Guofang Yu(喻国芳) |
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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
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Chin. Phys. B
2023 Vol.32 (9): 98503-098503
[Abstract]
(129)
[HTML 1 KB]
[PDF 6512 KB]
(80)
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66105 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Jin-Xin Zhang(张晋新),Xiang-Li Zhong(钟向丽), Hong Zhang(张鸿), An-An Ju(琚安安),Ye Liu(刘晔), and Xiao-Ping Ouyang(欧阳晓平) |
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Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation |
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Chin. Phys. B
2023 Vol.32 (6): 66105-066105
[Abstract]
(158)
[HTML 0 KB]
[PDF 1458 KB]
(195)
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48503 |
Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会) |
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A 4H-SiC trench IGBT with controllable hole-extracting path for low loss |
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Chin. Phys. B
2023 Vol.32 (4): 48503-048503
[Abstract]
(275)
[HTML 1 KB]
[PDF 1713 KB]
(121)
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47702 |
Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂) |
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SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current |
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Chin. Phys. B
2023 Vol.32 (4): 47702-047702
[Abstract]
(216)
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(49)
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38501 |
Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波) |
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High performance carrier stored trench bipolar transistor with dual shielding structure |
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Chin. Phys. B
2023 Vol.32 (3): 38501-038501
[Abstract]
(290)
[HTML 1 KB]
[PDF 734 KB]
(166)
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28503 |
Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏) |
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High performance SiC trench-type MOSFET with an integrated MOS-channel diode |
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Chin. Phys. B
2023 Vol.32 (2): 28503-028503
[Abstract]
(332)
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(304)
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18505 |
Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星) |
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A field-effect WSe2/Si heterojunction diode |
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Chin. Phys. B
2023 Vol.32 (1): 18505-018505
[Abstract]
(258)
[HTML 1 KB]
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(135)
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86106 |
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚) |
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Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors |
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Chin. Phys. B
2022 Vol.31 (8): 86106-086106
[Abstract]
(317)
[HTML 1 KB]
[PDF 1146 KB]
(102)
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68502 |
Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智) |
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An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors |
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Chin. Phys. B
2022 Vol.31 (6): 68502-068502
[Abstract]
(371)
[HTML 1 KB]
[PDF 3148 KB]
(71)
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47304 |
Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂) |
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Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench |
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Chin. Phys. B
2022 Vol.31 (4): 47304-047304
[Abstract]
(329)
[HTML 0 KB]
[PDF 1340 KB]
(49)
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28502 |
Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀) |
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Radiation effects of 50-MeV protons on PNP bipolar junction transistors |
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Chin. Phys. B
2022 Vol.31 (2): 28502-028502
[Abstract]
(329)
[HTML 0 KB]
[PDF 908 KB]
(79)
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28501 |
Shun Li(李顺), Jin-Sha Zhang(张金沙), Wei-Zhong Chen(陈伟中), Yao Huang(黄垚), Li-Jun He(贺利军), and Yi Huang(黄义) |
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Snapback-free shorted anode LIGBT with controlled anode barrier and resistance |
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Chin. Phys. B
2021 Vol.30 (2): 28501-0
[Abstract]
(370)
[HTML 1 KB]
[PDF 871 KB]
(78)
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58503 |
Sheng Sun(孙圣), Yuzhi Li(李育智), Shengdong Zhang(张盛东) |
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High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors |
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Chin. Phys. B
2020 Vol.29 (5): 58503-058503
[Abstract]
(601)
[HTML 1 KB]
[PDF 757 KB]
(92)
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127702 |
Chuan-Wen Chen(陈传文), Yang Xiang(项阳), Li-Guo Tang(汤立国), Lian Cui(崔莲), Bao-Qing Lin(林宝卿), Wei-Dong Du(杜伟东), Wen-Wu Cao(曹文武) |
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Depolarization field in relaxor-based ferroelectric single crystals under one-cycle bipolar pulse drive |
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Chin. Phys. B
2019 Vol.28 (12): 127702-127702
[Abstract]
(595)
[HTML 1 KB]
[PDF 497 KB]
(107)
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108501 |
Hui-Fang Xu(许会芳), Jian Cui(崔健), Wen Sun(孙雯), Xin-Feng Han(韩新风) |
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Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance |
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Chin. Phys. B
2019 Vol.28 (10): 108501-108501
[Abstract]
(827)
[HTML 1 KB]
[PDF 564 KB]
(197)
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98502 |
Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪) |
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Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout |
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Chin. Phys. B
2019 Vol.28 (9): 98502-098502
[Abstract]
(646)
[HTML 1 KB]
[PDF 2321 KB]
(1062)
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
(603)
[HTML 1 KB]
[PDF 1215 KB]
(195)
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68504 |
Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension |
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Chin. Phys. B
2019 Vol.28 (6): 68504-068504
[Abstract]
(680)
[HTML 1 KB]
[PDF 1521 KB]
(264)
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67302 |
Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院) |
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Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons |
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Chin. Phys. B
2019 Vol.28 (6): 67302-067302
[Abstract]
(616)
[HTML 1 KB]
[PDF 1403 KB]
(134)
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18505 |
Ru Han(韩茹), Hai-Chao Zhang(张海潮), Dang-Hui Wang(王党辉), Cui Li(李翠) |
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Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer |
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Chin. Phys. B
2019 Vol.28 (1): 18505-018505
[Abstract]
(817)
[HTML 1 KB]
[PDF 792 KB]
(163)
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108504 |
Hong Zhao(赵虹), Dan-Dan Peng(彭丹丹), Jun He(何军), Xin-Mei Li(李新梅), Meng-Qiu Long(龙孟秋) |
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Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons |
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Chin. Phys. B
2018 Vol.27 (10): 108504-108504
[Abstract]
(565)
[HTML 1 KB]
[PDF 1350 KB]
(173)
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88501 |
Weizhong Chen(陈伟中), Yao Huang(黄垚), Lijun He(贺利军), Zhengsheng Han(韩郑生), Yi Huang(黄义) |
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A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design |
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Chin. Phys. B
2018 Vol.27 (8): 88501-088501
[Abstract]
(675)
[HTML 1 KB]
[PDF 800 KB]
(221)
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78502 |
Cong Li(李聪), Zhi-Rui Yan(闫志蕊), Yi-Qi Zhuang(庄奕琪), Xiao-Long Zhao(赵小龙), Jia-Min Guo(郭嘉敏) |
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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric |
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Chin. Phys. B
2018 Vol.27 (7): 78502-078502
[Abstract]
(504)
[HTML 0 KB]
[PDF 1485 KB]
(223)
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47207 |
Tian-Qi Lu(陆天奇), Peng-Fei Nan(南鹏飞), Si-Long Song(宋思龙), Xin-Yue Zhu(朱欣悦), Huai-Zhou Zhao(赵怀周), Yuan Deng(邓元) |
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Enhanced thermoelectric performance through homogenously dispersed MnTe nanoparticles in p-type Bi0.52Sb1.48Te3 nanocomposites |
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Chin. Phys. B
2018 Vol.27 (4): 47207-047207
[Abstract]
(805)
[HTML 1 KB]
[PDF 1119 KB]
(361)
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38501 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利) |
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Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation |
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Chin. Phys. B
2018 Vol.27 (3): 38501-038501
[Abstract]
(624)
[HTML 0 KB]
[PDF 2130 KB]
(319)
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16103 |
J Assaf |
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Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation |
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Chin. Phys. B
2018 Vol.27 (1): 16103-016103
[Abstract]
(548)
[HTML 1 KB]
[PDF 1198 KB]
(237)
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98505 |
Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生) |
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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET |
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Chin. Phys. B
2017 Vol.26 (9): 98505-098505
[Abstract]
(569)
[HTML 0 KB]
[PDF 2992 KB]
(249)
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98509 |
Kai-Wei Yang(杨开巍), Ming-Jun Li(李明君), Xiao-Jiao Zhang(张小姣), Xin-Mei Li(李新梅), Yong-Li Gao(高永立), Meng-Qiu Long(龙孟秋) |
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Spin-dependent transport characteristics of nanostructures based on armchair arsenene nanoribbons |
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Chin. Phys. B
2017 Vol.26 (9): 98509-098509
[Abstract]
(659)
[HTML 0 KB]
[PDF 2433 KB]
(241)
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98502 |
Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲) |
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Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout |
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Chin. Phys. B
2017 Vol.26 (9): 98502-098502
[Abstract]
(815)
[HTML 0 KB]
[PDF 612 KB]
(243)
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38502 |
Qiao-Qun Yu(喻巧群), Jiang Lu(陆江), Hai-Nan Liu(刘海南), Jia-Jun Luo(罗家俊), Bo Li(李博), Li-Xin Wang(王立新), Zheng-Sheng Han(韩郑生) |
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Superjunction nanoscale partially narrow mesa IGBT towards superior performance |
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Chin. Phys. B
2017 Vol.26 (3): 38502-038502
[Abstract]
(901)
[HTML 0 KB]
[PDF 756 KB]
(432)
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127304 |
Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波) |
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Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer |
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Chin. Phys. B
2016 Vol.25 (12): 127304-127304
[Abstract]
(748)
[HTML 1 KB]
[PDF 431 KB]
(266)
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127303 |
Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春) |
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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments |
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Chin. Phys. B
2016 Vol.25 (12): 127303-127303
[Abstract]
(790)
[HTML 1 KB]
[PDF 985 KB]
(289)
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77804 |
Xu-Fang Bai(白旭芳), Ying Zhang(张颖), Wuyunqimuge(乌云其木格), Eerdunchaolu(额尔敦朝鲁) |
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Properties of strong-coupling magneto-bipolaron qubit in quantum dot under magnetic field |
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Chin. Phys. B
2016 Vol.25 (7): 77804-077804
[Abstract]
(668)
[HTML 1 KB]
[PDF 523 KB]
(463)
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58401 |
Ou-Peng Li(李欧鹏), Yong Zhang(张勇), Rui-Min Xu(徐锐敏), Wei Cheng(程伟), Yuan Wang(王元), Bing Niu(牛斌), Hai-Yan Lu(陆海燕) |
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A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology |
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Chin. Phys. B
2016 Vol.25 (5): 58401-058401
[Abstract]
(743)
[HTML 1 KB]
[PDF 633 KB]
(393)
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46104 |
Qi-Feng Zhao(赵启凤), Yi-Qi Zhuang(庄奕琪), Jun-Lin Bao(包军林), Wei Hu(胡为) |
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Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates |
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Chin. Phys. B
2016 Vol.25 (4): 46104-046104
[Abstract]
(678)
[HTML 1 KB]
[PDF 363 KB]
(369)
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119401 |
Yu Jun-Ting (于俊庭), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Huang Peng-Cheng (黄鹏程) |
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Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation |
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Chin. Phys. B
2015 Vol.24 (11): 119401-119401
[Abstract]
(643)
[HTML 1 KB]
[PDF 511 KB]
(586)
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88502 |
Li Pei (李培), Guo Hong-Xia (郭红霞), Guo Qi (郭旗), Zhang Jin-Xin (张晋新), Xiao Yao (肖尧), Wei Ying (魏莹), Cui Jiang-Wei (崔江维), Wen Lin (文林), Liu Mo-Han (刘默寒), Wang Xin (王信) |
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Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment |
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Chin. Phys. B
2015 Vol.24 (8): 88502-088502
[Abstract]
(656)
[HTML 1 KB]
[PDF 1147 KB]
(346)
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79401 |
Ding Yi (丁一), Hu Jian-Guo (胡建国), Qin Jun-Rui (秦军瑞), Tan Hong-Zhou (谭洪舟) |
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Effect of body biasing on single-event induced charge collection in deep N-well technology |
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Chin. Phys. B
2015 Vol.24 (7): 79401-079401
[Abstract]
(641)
[HTML 1 KB]
[PDF 420 KB]
(296)
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116104 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘) |
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 116104-116104
[Abstract]
(628)
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[PDF 672 KB]
(405)
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114402 |
Fu Qiang (付强), Zhang Wan-Rong (张万荣), Jin Dong-Yue (金冬月), Ding Chun-Bao (丁春宝), Zhao Yan-Xiao (赵彦晓), Lu Dong (鲁东) |
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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT |
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Chin. Phys. B
2014 Vol.23 (11): 114402-114402
[Abstract]
(597)
[HTML 1 KB]
[PDF 1131 KB]
(425)
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88504 |
Zhang Jin-Ping (张金平), Li Ze-Hong (李泽宏), Zhang Bo (张波), Li Zhao-Ji (李肇基) |
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A novel high performance TFS SJ IGBT with a buried oxide layer |
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Chin. Phys. B
2014 Vol.23 (8): 88504-088504
[Abstract]
(614)
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[PDF 461 KB]
(450)
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79401 |
He Yi-Bai (何益百), Chen Shu-Ming (陈书明) |
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Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients |
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Chin. Phys. B
2014 Vol.23 (7): 79401-079401
[Abstract]
(516)
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[PDF 996 KB]
(367)
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18505 |
Chen Wei-Zhong (陈伟中), Li Ze-Hong (李泽宏), Zhang Bo (张波), Ren Min (任敏), Zhang Jin-Ping (张金平), Liu Yong (刘永), Li Zhao-Ji (李肇基) |
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A snapback suppressed reverse-conducting IGBT with uniform temperature distribution |
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Chin. Phys. B
2014 Vol.23 (1): 18505-018505
[Abstract]
(676)
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[PDF 880 KB]
(794)
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117314 |
Xu Ding-Lin (许定林), Xiong Ying (熊颖), Tang Ming-Hua (唐明华), Zeng Bai-Wen (曾柏文), Xiao Yong-Guang (肖永光), Wang Zi-Ping (王子平) |
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Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO3 thin films |
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Chin. Phys. B
2013 Vol.22 (11): 117314-117314
[Abstract]
(620)
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[PDF 667 KB]
(427)
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97201 |
Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况) |
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A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain |
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Chin. Phys. B
2013 Vol.22 (9): 97201-097201
[Abstract]
(707)
[HTML 1 KB]
[PDF 643 KB]
(897)
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77309 |
Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate |
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Chin. Phys. B
2013 Vol.22 (7): 77309-077309
[Abstract]
(587)
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[PDF 585 KB]
(622)
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68502 |
Chai Chang-Chun (柴常春), Ma Zhen-Yang (马振洋), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Yu Xin Hai (于新海) |
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Hardening measures for bipolar transistor against microwave-induced damage |
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Chin. Phys. B
2013 Vol.22 (6): 68502-068502
[Abstract]
(785)
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[PDF 1068 KB]
(490)
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60509 |
Lei Bo (雷博), Xiao Guo-Chun (肖国春), Wu Xuan-Lü (吴旋律) |
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Comparison of performance between bipolar and unipolar double-frequency sinusoidal pulse width modulation in a digitally controlled H-bridge inverter system |
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Chin. Phys. B
2013 Vol.22 (6): 60509-060509
[Abstract]
(762)
[HTML 1 KB]
[PDF 1177 KB]
(11765)
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56103 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘), Yu Yong-Tao (余永涛), Ma Ying-Qi (马英起), Feng Guo-Qiang (封国强), Han Jian-Wei (韩建伟) |
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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor |
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Chin. Phys. B
2013 Vol.22 (5): 56103-056103
[Abstract]
(567)
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[PDF 595 KB]
(584)
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27303 |
Luo Xiao-Rong (罗小蓉), Wang Qi (王琦), Yao Guo-Liang (姚国亮), Wang Yuan-Gang (王元刚), Lei Tian-Fei (雷天飞), Wang Pei (王沛), Jiang Yong-Heng (蒋永恒), Zhou Kun (周坤), Zhang Bo (张波) |
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A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch |
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Chin. Phys. B
2013 Vol.22 (2): 27303-027303
[Abstract]
(781)
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[PDF 809 KB]
(834)
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28502 |
Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Qiao Li-Ping (乔丽萍 ) |
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Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters |
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Chin. Phys. B
2013 Vol.22 (2): 28502-028502
[Abstract]
(798)
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[PDF 1073 KB]
(784)
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99401 |
Liu Zheng (刘征), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Qin Jun-Rui (秦军瑞), Liu Rong-Rong (刘蓉容) |
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Parasitic bipolar amplification in single event transient and its temperature dependence |
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Chin. Phys. B
2012 Vol.21 (9): 99401-099401
[Abstract]
(1230)
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[PDF 1004 KB]
(767)
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98502 |
Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Chen Bin (陈斌), Song Kun (宋坤), Zhao Ying-Bo (赵颖博) |
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Microwave damage susceptibility trend of bipolar transistor as a function of frequency |
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Chin. Phys. B
2012 Vol.21 (9): 98502-098502
[Abstract]
(1206)
[HTML 1 KB]
[PDF 239 KB]
(628)
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88502 |
Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 ) |
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Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer |
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Chin. Phys. B
2012 Vol.21 (8): 88502-088502
[Abstract]
(1395)
[HTML 1 KB]
[PDF 907 KB]
(1218)
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68504 |
Zhang Jin-Ping(张金平), Li Ze-Hong(李泽宏), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer |
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Chin. Phys. B
2012 Vol.21 (6): 68504-068504
[Abstract]
(1369)
[HTML 1 KB]
[PDF 801 KB]
(1099)
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58502 |
Ma Zhen-Yang(马振洋), Chai Chang-Chun(柴常春), Ren Xing-Rong(任兴荣), Yang Yin-Tang(杨银堂), Chen Bin(陈斌), and Zhao Ying-Bo(赵颖博) |
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Effects of microwave pulse-width damage on a bipolar transistor |
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Chin. Phys. B
2012 Vol.21 (5): 58502-058502
[Abstract]
(1479)
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[PDF 1579 KB]
(1339)
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58501 |
Ge Ji(葛霁), Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智) |
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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors |
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Chin. Phys. B
2012 Vol.21 (5): 58501-058501
[Abstract]
(1440)
[HTML 1 KB]
[PDF 187 KB]
(1031)
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16104 |
Chen Shu-Ming(陈书明) and Chen Jian-Jun(陈建军) |
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Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain |
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Chin. Phys. B
2012 Vol.21 (1): 16104-016104
[Abstract]
(1155)
[HTML 1 KB]
[PDF 351 KB]
(776)
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16103 |
Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Deng Ke-Feng (邓科峰) |
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New insight into the parasitic bipolar amplification effect in single event transient production |
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Chin. Phys. B
2012 Vol.21 (1): 16103-016103
[Abstract]
(1255)
[HTML 1 KB]
[PDF 702 KB]
(749)
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98501 |
Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) |
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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects |
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Chin. Phys. B
2011 Vol.20 (9): 98501-098501
[Abstract]
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[HTML 0 KB]
[PDF 140 KB]
(737)
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74401 |
Jin Dong-Yue(金冬月), Zhang Wan-Rong(张万荣), Fu Qiang(付强), Chen Liang(陈亮), Xiao Ying(肖盈), Wang Ren-Qing(王任卿), and Zhao Xin(赵昕) |
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Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability |
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Chin. Phys. B
2011 Vol.20 (7): 74401-074401
[Abstract]
(1473)
[HTML 0 KB]
[PDF 3052 KB]
(695)
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64401 |
Jin Dong-Yue(金冬月), Zhang Wan-Rong(张万荣), Chen Liang(陈亮), Fu Qiang(付强), Xiao Ying(肖盈), Wang Ren-Qing(王任卿), and Zhao Xin(赵昕) |
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Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors |
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Chin. Phys. B
2011 Vol.20 (6): 64401-064401
[Abstract]
(1475)
[HTML 0 KB]
[PDF 1812 KB]
(877)
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58503 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Qu Jiang-Tao(屈江涛) |
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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (5): 58503-058503
[Abstract]
(1308)
[HTML 0 KB]
[PDF 433 KB]
(952)
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58502 |
Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立) |
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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors |
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Chin. Phys. B
2011 Vol.20 (5): 58502-058502
[Abstract]
(1499)
[HTML 0 KB]
[PDF 468 KB]
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129401 |
Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liu Bi-Wei(刘必慰), Liu Zheng(刘征), Liang Bin(梁斌), and Du Yan-Kang(杜延康) |
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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology |
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Chin. Phys. B
2011 Vol.20 (12): 129401-129401
[Abstract]
(1253)
[HTML 1 KB]
[PDF 633 KB]
(890)
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108502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇) Li Yu-Chen(李妤晨), and Qu Jiang-Tao(屈江涛) |
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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (10): 108502-108502
[Abstract]
(1452)
[HTML 0 KB]
[PDF 503 KB]
(965)
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18502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Ma Jian-Li(马建立), and Xu Li-Jun(许立军) |
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Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator |
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Chin. Phys. B
2011 Vol.20 (1): 18502-018502
[Abstract]
(1610)
[HTML 0 KB]
[PDF 263 KB]
(1014)
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18501 |
Chen Liang(陈亮), Zhang Wan-Rong(张万荣), Jin Dong-Yue(金冬月), Shen Pei(沈珮), Xie Hong-Yun(谢红云), Ding Chun-Bao(丁春宝),Xiao Ying(肖盈),Sun Bo-Tao(孙博韬), and Wang Ren-Qing(王任卿) |
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Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing |
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Chin. Phys. B
2011 Vol.20 (1): 18501-018501
[Abstract]
(1527)
[HTML 0 KB]
[PDF 4405 KB]
(1346)
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67102 |
Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Deng Xiao-Chuan(邓小川) |
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Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor |
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Chin. Phys. B
2010 Vol.19 (6): 67102-067102
[Abstract]
(1706)
[HTML 1 KB]
[PDF 515 KB]
(986)
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56103 |
Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭) |
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Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons |
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Chin. Phys. B
2010 Vol.19 (5): 56103-056103
[Abstract]
(1212)
[HTML 1 KB]
[PDF 2089 KB]
(1093)
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3995 |
Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟) |
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A novel structure of a high current gain 4H-SiC BJT with a buried layer in base |
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Chin. Phys. B
2009 Vol.18 (9): 3995-3999
[Abstract]
(1805)
[HTML 1 KB]
[PDF 753 KB]
(1746)
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3002 |
Li Jian-Feng(李建丰), Chang Wen-Li(常文利), Ou Gu-Ping(欧谷平), and Zhang Fu-Jia(张福甲) |
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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide |
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Chin. Phys. B
2009 Vol.18 (7): 3002-3007
[Abstract]
(1379)
[HTML 1 KB]
[PDF 1577 KB]
(862)
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763 |
Zhang You-Run(张有润), Zhang Bo(张波), Li Ze-Hong(李泽宏), Lai Chang-Jin(赖昌菁), and Li Zhao-Ji(李肇基) |
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Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device |
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Chin. Phys. B
2009 Vol.18 (2): 763-767
[Abstract]
(1106)
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(592)
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