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Chin. Phys. B, 2013, Vol. 22(2): 028502    DOI: 10.1088/1674-1056/22/2/028502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Qiao Li-Ping (乔丽萍 )
School of Microelectronics, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.
Keywords:  bipolar transistor      high power microwave      pulse repetition frequency      duty cycle  
Received:  06 May 2012      Revised:  10 July 2012      Accepted manuscript online: 
PACS:  85.30.Pq (Bipolar transistors)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60776034).
Corresponding Authors:  Ma Zhen-Yang     E-mail:  zyma@mail.xidian.edu.cn

Cite this article: 

Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Qiao Li-Ping (乔丽萍 ) Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters 2013 Chin. Phys. B 22 028502

[1] Luo W, Yin W Y, Zhu M D, Mao J F and Zhao J Y 2012 IEEE Trans. Electromagn. Compat. 54 1006
[2] Yoo M, Kim W, Park Y M, Kim M H, Chung Y S, Jung H K and Cheon C 2010 IEEE Int. Symp. Electromagn. Compat., July 25-30, 2010 Fort Lauderdale, FL, USA, p. 364
[3] Kim K and Iliadis A A 2010 Solid-State Electron. 54 18
[4] Iliadis A A and Kyechong K 2010 IEEE Trans. Device Mater. Reliab. 10 347
[5] Wang H Y, Li J Y, Zhou Y H, Hu B and Yu X Y 2009 Electromagnetics 29 393
[6] Ma Q, Jiang J J, Bie S W, Tian B, Liang P and He H H 2009 Chin. Phys. B 18 2063
[7] Chai C C, Xi X W, Ren X R, Yang Y T and Ma Z Y 2010 Acta Phys. Sin. 59 8118 (in Chinese)
[8] Mansson D, Hottappillil R, Backstrom M and Lunden O 2008 IEEE Trans. Electromagn. Compat. 50 101
[9] Nitsch D, Camp M, Sabath F, ter Haseborg J L and Garbe H 2004 IEEE Trans. Electromagn. Compat. 46 380
[10] Backstrom M G and Lovstrand K G 2004 IEEE Trans. Electromagn. Compat. 46 396
[11] Klunder C and Haseborg J L 2010 IEEE Int. Symp. Electromagn. Compat., July 25-30, 2010 Fort Lauderdale, FL, USA, p. 359
[12] Ma Z Y, Chai C C, Ren X R, Yang Y T and Chen B 2012 Acta Phys. Sin. 61 078501 (in Chinese)
[13] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B and Zhao Y B 2012 Chin. Phys. B 21 058502
[14] Zhang B, Chai C C and Yang Y T 2010 Acta Phys. Sin. 59 8063 (in chinese)
[15] Anghel C, Gillon R and Ionescu A M 2004 IEEE Electron Dev. Lett. 25 141
[16] Xi X W, Chai C C, Ren X R, Yang Y T, Zhang B and Hong X 2010 J. Semicond. 31 044005
[17] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B and Zhao Y B 2012 Chin. Phys. B 21 058502
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