Snapback-free shorted anode LIGBT with controlled anode barrier and resistance

doi:10.1088/1674-1056/abb7fc

Abstract A novel shorted anode lateral-insulated gate bipolar transistor (SA LIGBT) with snapback-free characteristic is proposed and investigated. The device features a controlled barrier V_barrier and resistance R_SA in anode, named CBR LIGBT. The electron barrier is formed by the P-float/N-buffer junction, while the anode resistance includes the polysilicon layer and N-float. At forward conduction stage, the V_barrier and R_SA can be increased by adjusting the doping of the P-float and polysilicon layer, respectively, which can suppress the unipolar mode to eliminate the snapback. At turn-off stage, the low-resistance extraction path (N-buffer/P-float/polysilicon layer /N-float) can quickly extract the electrons in the N-drift, which can effectively accelerate the turn-off speed of the device. The simulation results show that at the same V_on of 1.3 V, the E_off of the CBR LIGBT is reduced by 85%, 73%, and 59.6% compared with the SSA LIGBT, conventional LIGBT, and TSA LIGBT, respectively. Additionally, at the same E_off of 1.5 mJ/cm², the CBR LIGBT achieves the lowest V_on of 1.1 V compared with the other LIGBTs.

Keywords: shorted anode lateral-insulated gate bipolar transistor snapback barrier trade-off

Received: 22 July 2020
Revised: 01 September 2020
Accepted manuscript online: 14 September 2020

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Pq	(Bipolar transistors)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61604027 and 61704016) and the Fund from Chongqing Technology Innovation and Application Development (Key Industry Research and Development), China (Grant No. cstc2018jszx-cyzd0646).

Corresponding Authors: ^†Corresponding author. E-mail: cwz@cqu.edu.cn

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Shun Li(李顺), Jin-Sha Zhang(张金沙), Wei-Zhong Chen(陈伟中), Yao Huang(黄垚), Li-Jun He(贺利军), and Yi Huang(黄义) Snapback-free shorted anode LIGBT with controlled anode barrier and resistance 2021 Chin. Phys. B 30 028501

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Snapback-free shorted anode LIGBT with controlled anode barrier and resistance

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