Effect of body biasing on single-event induced charge collection in deep N-well technology

doi:10.1088/1674-1056/24/7/079401

Abstract As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well.

Keywords: body biasing electron hole bipolar amplification

Received: 18 December 2014
Revised: 09 February 2015
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Corresponding Authors: Hu Jian-Guo
E-mail: hujguo@mail.sysu.edu.cn

Cite this article:

Ding Yi (丁一), Hu Jian-Guo (胡建国), Qin Jun-Rui (秦军瑞), Tan Hong-Zhou (谭洪舟) Effect of body biasing on single-event induced charge collection in deep N-well technology 2015 Chin. Phys. B 24 079401

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Effect of body biasing on single-event induced charge collection in deep N-well technology

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