Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate-drain underlap

doi:10.1088/1674-1056/acbaf3

Abstract Dual-metal gate and gate-drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET). The effects of gate work function and gate-drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices, such as the on-state current ($I_{\rm on}$), ambipolar current ($I_{\rm amb}$), transconductance ($g_{\rm m}$), cut-off frequency ($f_{\rm T}$) and gain-bandwidth product (GBP), are analyzed and compared in this work. Also, a combination of both the dual-metal gate and gate-drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET (CSP-DMUN-TFET), which contains a C-shaped pocket area that significantly increases the on-state current of the device; this combination design substantially reduces the ambipolar current. The results show that the CSP-DMUN-TFET demonstrates an excellent performance, including high $I_{\rm on}$ ($9.03\times 10^{-4}$ A/μm), high $I_{\rm on}/I_{\rm off}$ ($\sim 10^{11}$), low SS$_{\rm avg}$ ($\sim 13 $ mV/dec), and low $I_{\rm amb}$ ($2.15\times 10^{-17}$ A/μm). The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents, making it a potential replacement in the next generation of semiconductor devices.

Keywords: tunnel field effect transistor ambipolar current dual metal gate gate-drain underlap

Received: 31 October 2022
Revised: 09 February 2023
Accepted manuscript online: 10 February 2023

PACS:	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	85.30.Tv	(Field effect devices)
	81.05.Cy	(Elemental semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 52177185 and 62174055).

Corresponding Authors: Wei-Jing Liu
E-mail: liuwj5500@163.com

Cite this article:

Zi-Miao Zhao(赵梓淼), Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Nai-Yun Tang(汤乃云), Jiang-Nan Liu(刘江南), Xian-Ting Liu(刘先婷), Xuan-Lin Li(李宣霖), Xin-Fu Pan(潘信甫), Min Tang(唐敏), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东) Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate-drain underlap 2023 Chin. Phys. B 32 108502

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Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate-drain underlap

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