1 College of Electronics and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China; 2 Semiconductor Manufacturing International Corporation, Shanghai 201203, China; 3 Radiwave Technologies Corporation Limited, Shenzhen 518172, China; 4 Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200041, China
Abstract Dual-metal gate and gate-drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET). The effects of gate work function and gate-drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices, such as the on-state current (), ambipolar current (), transconductance (), cut-off frequency () and gain-bandwidth product (GBP), are analyzed and compared in this work. Also, a combination of both the dual-metal gate and gate-drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET (CSP-DMUN-TFET), which contains a C-shaped pocket area that significantly increases the on-state current of the device; this combination design substantially reduces the ambipolar current. The results show that the CSP-DMUN-TFET demonstrates an excellent performance, including high ( A/μm), high (), low SS ( mV/dec), and low ( A/μm). The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents, making it a potential replacement in the next generation of semiconductor devices.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 52177185 and 62174055).
Corresponding Authors:
Wei-Jing Liu
E-mail: liuwj5500@163.com
Cite this article:
Zi-Miao Zhao(赵梓淼), Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Nai-Yun Tang(汤乃云), Jiang-Nan Liu(刘江南), Xian-Ting Liu(刘先婷), Xuan-Lin Li(李宣霖), Xin-Fu Pan(潘信甫), Min Tang(唐敏), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东) Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate-drain underlap 2023 Chin. Phys. B 32 108502
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