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A field-effect WSe2/Si heterojunction diode |
| Rui Yu(余睿)1, Zhe Sheng(盛喆)1, Wennan Hu(胡文楠)1, Yue Wang(王越)1, Jianguo Dong(董建国)1, Haoran Sun(孙浩然)1, Zengguang Cheng(程增光)1, and Zengxing Zhang(张增星)1,2,† |
1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 National Integrated Circuit Innovation Center, Shanghai 201203, China |
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Abstract It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional (2D) materials in silicon roadmap. In this paper, we reported a field-effect WSe2/Si heterojunction diode based on ambipolar 2D WSe2 and silicon on insulator (SOI). Our results indicate that the device exhibits a p-n diode behavior with a rectifying ratio of ～ 300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×1010 Jones and external quantum efficiency (EQE) of 8.9 %. Due to the ambipolar behavior of the WSe2, the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.
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Received: 04 June 2022
Revised: 24 August 2022
Accepted manuscript online: 08 September 2022
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PACS:
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.30.Tv
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(Field effect devices)
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81.16.-c
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(Methods of micro- and nanofabrication and processing)
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| Fund: Project supported by the Ministry of Science and Technology of China (Grant No. 2018YFE0118300), the National Key Research and Development Program of China (Grant No. 2018YFA0703703), and State Key Laboratory of ASIC & System (Grant No. 2021MS003), and Science and Technology Commission of Shanghai Municipality, China (Grant No. 20501130100). |
Corresponding Authors:
Zengxing Zhang
E-mail: zhangzx@fudan.edu.cn
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Cite this article:
Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星) A field-effect WSe2/Si heterojunction diode 2023 Chin. Phys. B 32 018505
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