A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

doi:10.1088/1674-1056/22/9/097201

Abstract In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3×10¹⁷ cm^-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8×10¹⁷ cm^-3 contribute to a maximum current gain of only 128.

Keywords: 4H-SiC lateral bipolar junction transistor (BJT) high current gain high breakdown voltage

Received: 17 December 2012
Revised: 12 March 2013
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the Ministry of Education of China (Grant No. 20100101110056) and the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468).

Corresponding Authors: Xie Gang
E-mail: xielyz@zju.edu.cn

Cite this article:

Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况) A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain 2013 Chin. Phys. B 22 097201

[1]	Domeij M, Lee H S, Danielsson E, Zetterling C M, Ostling M and Schoner A 2005 Electron Dev. Lett. 26 743
[2]	Yan G, Huang A Q, Krishnaswami S, Agarwal A K and Scozzie C 2006 5th International Power Electronics and Motion Control Conference August 14-16 2006 Shanghai, China p. 1
[3]	Buono B, Ghandi R, Domeij M, Malm B G, Zetterling C M and Ostling M 2010 Electron Dev. 57 2664
[4]	Ghandi R, Buono B, Domeij M, Esteve R, Schoner A and Han J S 2011 Electron Dev. 58 259
[5]	Miyake H, Kimoto T and Suda J 2011 Electron Dev. Lett. 32 285
[6]	Zhang Q, Zhang Y M, Yuan L, Zhang Y M, Tang X Y and Song Q W 2012 Chin. Phys. B 21 088502
[7]	Zhang Y R, Zhang B, Li Z J, Deng X C and Liu X L 2009 Chin. Phys. B 18 3995
[8]	Zhang J H, Li X Q, Alexandrov P, Fursin L, Wang X H and Zhao J H 2008 Electron Dev. 55 1899
[9]	Zhang Q, Agarwal A, Burk A, Geil B and Scozzie C 2008 Solid State Electron. 52 1008
[10]	Nonaka K, Horiuchi A, Negoro Y, Iwanaga K, Yokoyama S, Hashimoto H, Sato M, Maeyama Y, Shimizu M and Iwakuro H 2009 Mater. Sci. Forum 615 821
[11]	Miyake H, Kimoto T and Suda J 2011 Electron Dev. Lett. 32 285
[12]	Domeij M, Konstantiov A, Lindgren A, Zaring C, Gumaelius K and Reimark M 2012 Mater. Sci. Forum. 717 1123
[13]	Miyake H, Kimoto T and Suda J 2011 Electron Dev. Lett. 32 841
[14]	Device Simulator Atlas 2008 Atlas User’s Manual (Silvaco International)
[15]	Ruff M, Mitlehner H and Helbig R 1994 Electron Dev. 41 1040
[16]	Kordina O, Bergman J, Hallin C and Janzen E 1996 Appl. Phys. Lett. 69
[17]	Galeckas A, Linnros J, Grivickas V, Lindefelt U and Hallin C 1997 Appl. Phys. Lett. 71 3269
[18]	Zhang Y R, Zhang B, Li Z J and Deng X C 2010 Chin. Phys. B 19 067102
[19]	Troffer T, Schadt M, Frank T, Itoh H, Pensl G, Heindl J, Strunk H and Marier M 1997 Phys. Stat. Sol. 162 277
[20]	Lindefelt U 1998 J. Appl. Phys. 84 2628

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A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

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