A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

doi:10.1088/1674-1056/23/1/018505

Abstract A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.

Keywords: reverse-conducting insulated-gate bipolar transistor snapback temperature reliability

Received: 07 April 2013
Revised: 08 June 2013
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Pq	(Bipolar transistors)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Science and Technology Major Project, China (Grant No. 2011ZX02504-003), the National Natural Science Foundation of China (Grant No. 61076082), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2011J024).

Corresponding Authors: Chen Wei-Zhong
E-mail: cwz@cqu.edu.cn

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Chen Wei-Zhong (陈伟中), Li Ze-Hong (李泽宏), Zhang Bo (张波), Ren Min (任敏), Zhang Jin-Ping (张金平), Liu Yong (刘永), Li Zhao-Ji (李肇基) A snapback suppressed reverse-conducting IGBT with uniform temperature distribution 2014 Chin. Phys. B 23 018505

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A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

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