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A novel high performance TFS SJ IGBT with a buried oxide layer |
| Zhang Jin-Ping (张金平), Li Ze-Hong (李泽宏), Zhang Bo (张波), Li Zhao-Ji (李肇基) |
| State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract A novel high performance trench field stop (TFS) superjunction (SJ) insulated gate bipolar transistor (IGBT) with a buried oxide (BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT (Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop (Vce(on)) and an improved tradeoff between Vce(on) and turn-off loss (Eoff), with no breakdown voltage (BV) degraded. The results show that with the spacing between the gate and the BO layer Wo=0.2 μm, the thickness of the BO layer Lo=0.2 μm, the thickness of the drift region Ld=90 μm, the half width and doping concentration of the N- and P-pillars Wn=Wp=2.5 μm and Nn=Np=3× 1015 cm-3, the Vce(on) and Eoff of the proposed structure are 1.08 V and 2.81 mJ/cm2 with the collector doping concentration Nc=1× 1018 cm-3 and 1.12 V and 1.73 mJ/cm2 with Nc=5× 1017 cm-3, respectively. However, with the same device parameters, the Vce(on) and Eoff for the Conv-SJ are 1.81 V and 2.88 mJ/cm2 with Nc=1× 1018 cm-3 and 1.98 V and 2.82 mJ/cm2 with Nc=5× 1017 cm-3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.
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Received: 02 January 2014
Revised: 19 February 2014
Accepted manuscript online:
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Pq
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(Bipolar transistors)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported by the National Science and Technology Major Project, China (Grant No. 2011ZX02504-003), the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2011J024), and the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201301). |
Corresponding Authors:
Zhang Jin-Ping
E-mail: jinpingzhang@uestc.edu.cn
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Cite this article:
Zhang Jin-Ping (张金平), Li Ze-Hong (李泽宏), Zhang Bo (张波), Li Zhao-Ji (李肇基) A novel high performance TFS SJ IGBT with a buried oxide layer 2014 Chin. Phys. B 23 088504
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