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Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer |
Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract A novel ultralow turnoff loss dual-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored (CS) layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the carrier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop (Von). In the off-state, due to the uniform carrier distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss (Eoff). Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.
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Received: 27 July 2016
Revised: 25 August 2016
Accepted manuscript online:
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PACS:
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61376080 and 61674027) and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2014A030313736 and 2016A030311022). |
Corresponding Authors:
Ming Qiao
E-mail: qiaoming@uestc.edu.cn
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Cite this article:
Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波) Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer 2016 Chin. Phys. B 25 127304
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