Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

doi:10.1088/1674-1056/21/1/016104

Abstract A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.

Keywords: temperature dependence single event transient parasitic bipolar amplification effect charge sharing collection

Received: 29 July 2011
Revised: 23 August 2011
Accepted manuscript online:

PACS:	61.80.Jh	(Ion radiation effects)
	85.40.-e	(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004).

Cite this article:

Chen Shu-Ming(陈书明) and Chen Jian-Jun(陈建军) Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain 2012 Chin. Phys. B 21 016104

[1]	Gadlage M J, Ahlbin J R, Narasimham B, Bhuva B L, Massengill L W, Reed R A, Schrimpf R D and Vizkelethy G 2010 IEEE Tran. Nucl. Sci. 57 3336
[2]	Jagannathan S, Gadlage M J, Bhuva B L, Schrimpf R D, Narasimham B, Chetia J, Ahlbin J R and Massengill L W 2010 IEEE Tran. Nucl. Sci. 57 3386
[3]	Ahlbin J R, Gadlage M J, Ball D R, Witulski A W, Bhuva B L and Reed R A 2010 IEEE Tran. Nucl. Sci. 57 3380
[4]	Atkinson N M, Witulski A F and Holman W T 2011 IEEE Tran. Nucl. Sci. 58 885
[5]	Chen S M, Liang B, Liu B W and Liu Z 2008 IEEE Trans. Nucl. Sci. 55 2914
[6]	Gadlage M J, Ahlbin J R, Narasimham B, Ramachandran V, Dinkins C A, Bhuva B L, Schrimpf R D and Shuler R L 2009 Proc. IEEE Int. Rel. Phys. Symp. April 26-30, 2009 Montreal, Canada, p. 170
[7]	Gadlage M J, Ahlbin J R, Ramachandran V, Gouker P, Dinkins C A, Bhuva B L, Narasimham B, Schrimpf R D, McCurdy M W, Alles M L, Reed R A, Mendenhall M H, Massengill L W, Shuler R L and McMorrow D 2009 IEEE Trans. Nucl. Sci. 56 3115
[8]	Gadlage M J, Ahlbin J R, Narasimham B, Bhuva B L, Massengill L W and Schrimpf R D 2011 IEEE Tran. Device Mater. Rel. 11 179
[9]	Amusan O A, Witulski A F, Massengill L W, Bhuva B L, Fleming P R, Alles M L, Sternberg A L, Black J D and Schrimpf R D 2006 IEEE Trans. Nucl. Sci. 53 3253
[10]	Amusan O A, Massengill L W, Bhuva B L, DasGupta S, Witulski A F and Ahlbin J R 2007 IEEE Tran. Nucl. Sci. 54 2060
[11]	Liu F Y, Liu H Z, Liu B W, Liang B and Chen J J 2011 Acta Phys. Sin. 60 040000 (in Chinese)
[12]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese)
[13]	Liu B W, Chen S M, Liang B, Liu Z and Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[14]	Olson B D, Ball D R, Warren K M, Massengill L W, Haddad N F, Doyle S E and McMorrow D 2005 IEEE Trans. Nucl. Sci. 52 2132

[1]	Heat transport properties within living biological tissues with temperature-dependent thermal properties Ying-Ze Wang(王颖泽), Xiao-Yu Lu(陆晓宇), and Dong Liu(刘栋). Chin. Phys. B, 2023, 32(1): 014401.
[2]	Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[3]	Temperature dependence of spin pumping in YIG/NiO_x/W multilayer Lijun Ni(倪丽君), Wenqiang Wang(王文强), Lichuan Jin(金立川), Jiandong Ye(叶建东), Hehe Gong(巩贺贺), Xiang Zhan(战翔), Zhendong Chen(陈振东), Longlong Zhang(张龙龙), Xingze Dai(代兴泽), Yao Li(黎遥), Rong Zhang(张荣), Yi Yang(杨燚), Huaiwu Zhang(张怀武), Ronghua Liu(刘荣华), Lina Chen(陈丽娜), and Yongbing Xu(徐永兵). Chin. Phys. B, 2022, 31(12): 128504.
[4]	Temperature-switching logic in MoS₂ single transistors Xiaozhang Chen(陈孝章), Lehua Gu(顾乐华), Lan Liu(刘岚), Huawei Chen(陈华威), Jingyu Li(栗敬俣), Chunsen Liu(刘春森), Peng Zhou(周鹏). Chin. Phys. B, 2020, 29(9): 097201.
[5]	Temperature dependence of mode coupling effect in piezoelectric vibrator made of [001]_c-poled Mn-doped 0.24PIN-0.46PMN-0.30PT ternary single crystals with high electromechanical coupling factor Nai-Xing Huang(黄乃兴), En-Wei Sun(孙恩伟), Rui Zhang(张锐), Bin Yang(杨彬), Jian Liu(刘俭), Tian-Quan Lü(吕天全), Wen-Wu Cao(曹文武). Chin. Phys. B, 2020, 29(7): 075201.
[6]	Noise temperature distribution of superconducting hot electron bolometer mixers Kang-Min Zhou(周康敏), Wei Miao(缪巍), Yue Geng(耿悦), Yan Delorme, Wen Zhang(张文), Yuan Ren(任远), Kun Zhang(张坤), Sheng-Cai Shi(史生才). Chin. Phys. B, 2020, 29(5): 058505.
[7]	Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method Guan-Qing Yang(杨冠卿), Shi-Zhu Zhang(张世著), Bo Xu(徐波), Yong-Hai Chen(陈涌海), Zhan-Guo Wang(王占国). Chin. Phys. B, 2017, 26(6): 068103.
[8]	Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model Ya-Bin Sun(孙亚宾), Jun Fu(付军), Yu-Dong Wang(王玉东), Wei Zhou(周卫), Wei Zhang(张伟), and Zhi-Hong Liu(刘志弘). Chin. Phys. B, 2016, 25(4): 048501.
[9]	Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode Jia Yun-Peng (贾云鹏), Zhao Bao (赵豹), Yang Fei (杨霏), Wu Yu (吴郁), Zhou Xuan (周璇), Li Zhe (李哲), Tan Jian (谭健). Chin. Phys. B, 2015, 24(12): 126104.
[10]	Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation Yu Jun-Ting (于俊庭), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Huang Peng-Cheng (黄鹏程). Chin. Phys. B, 2015, 24(11): 119401.
[11]	Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(9): 097307.
[12]	Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET Bi Jin-Shun (毕津顺), Zeng Chuan-Bin (曾传滨), Gao Lin-Chun (高林春), Liu Gang (刘刚), Luo Jia-Jun (罗家俊), Han Zheng-Sheng (韩郑生). Chin. Phys. B, 2014, 23(8): 088505.
[13]	Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients He Yi-Bai (何益百), Chen Shu-Ming (陈书明). Chin. Phys. B, 2014, 23(7): 079401.
[14]	Temperature dependence of the photothermal laser cooling efficiency for a micro-cantilever Ding Li-Ping (丁丽萍), Mao Tian-Hua (毛添华), Fu Hao (付号), Cao Geng-Yu (曹更玉). Chin. Phys. B, 2014, 23(10): 107801.
[15]	A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘), Yu Yong-Tao (余永涛), Ma Ying-Qi (马英起), Feng Guo-Qiang (封国强), Han Jian-Wei (韩建伟). Chin. Phys. B, 2013, 22(5): 056103.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

Cite this article:

Online attention