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Other articles related with "GaAs"：
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98103 |
Xiang-Bin Su(苏向斌), Fu-Hui Shao(邵福会), Hui-Ming Hao(郝慧明), Han-Qing Liu(刘汗青),Shu-Lun Li(李叔伦), De-Yan Dai(戴德炎), Xiang-Jun Shang(尚向军), Tian-Fang Wang(王天放),Yu Zhang(张宇), Cheng-Ao Yang(杨成奥), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥),Ying Ding(丁颖), and Zhi-Chuan Niu(牛智川) |
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High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers |
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Chin. Phys. B
2023 Vol.32 (9): 98103-098103
[Abstract]
(193)
[HTML 1 KB]
[PDF 1402 KB]
(83)
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37801 |
Shu-Fang Ma(马淑芳), Lei Li(李磊), Qing-Bo Kong(孔庆波), Yang Xu(徐阳), Qing-Ming Liu(刘青明), Shuai Zhang(张帅), Xi-Shu Zhang(张西数), Bin Han(韩斌), Bo-Cang Qiu(仇伯仓), Bing-She Xu(许并社), and Xiao-Dong Hao(郝晓东) |
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Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells |
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Chin. Phys. B
2023 Vol.32 (3): 37801-037801
[Abstract]
(299)
[HTML 1 KB]
[PDF 2613 KB]
(102)
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17305 |
Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波) |
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High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure |
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Chin. Phys. B
2023 Vol.32 (1): 17305-017305
[Abstract]
(315)
[HTML 0 KB]
[PDF 3641 KB]
(121)
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17801 |
Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙) |
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Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell |
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Chin. Phys. B
2023 Vol.32 (1): 17801-017801
[Abstract]
(329)
[HTML 1 KB]
[PDF 614 KB]
(71)
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98505 |
Zi-Heng Wang(王自衡), Yi-Jun Zhang(张益军), Shi-Man Li(李诗曼), Shan Li(李姗), Jing-Jing Zhan(詹晶晶), Yun-Sheng Qian(钱芸生), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Gang-Cheng Jiao(焦岗成), and Yu-Gang Zeng(曾玉刚) |
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Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation |
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Chin. Phys. B
2022 Vol.31 (9): 98505-098505
[Abstract]
(316)
[HTML 0 KB]
[PDF 1308 KB]
(74)
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67102 |
Ya-Chao Li(李亚超), Chao Ge(葛超), Peng Wang(汪鹏), Shuang Liu(刘爽), Xiao-Ran Ma(麻晓冉), Bing Wang(王冰), Hai-Ying Song(宋海英), and Shi-Bing Liu(刘世炳) |
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Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response |
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Chin. Phys. B
2022 Vol.31 (6): 67102-067102
[Abstract]
(336)
[HTML 1 KB]
[PDF 4829 KB]
(81)
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58502 |
Shurui Cao(曹书睿), Ruize Feng(封瑞泽), Bo Wang(王博), Tong Liu(刘桐), Peng Ding(丁芃), and Zhi Jin(金智) |
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Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2022 Vol.31 (5): 58502-058502
[Abstract]
(400)
[HTML 1 KB]
[PDF 1749 KB]
(205)
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47801 |
Xiaotian Zhu(朱笑天), Bingheng Meng(孟兵恒), Dengkui Wang(王登魁), Xue Chen(陈雪), Lei Liao(廖蕾), Mingming Jiang(姜明明), and Zhipeng Wei(魏志鹏) |
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Improving the performance of a GaAs nanowire photodetector using surface plasmon polaritons |
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Chin. Phys. B
2022 Vol.31 (4): 47801-047801
[Abstract]
(391)
[HTML 0 KB]
[PDF 1959 KB]
(179)
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44203 |
Humberto Noverola-Gamas, Luis Manuel Gaggero-Sager, and Outmane Oubram |
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Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells |
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Chin. Phys. B
2022 Vol.31 (4): 44203-044203
[Abstract]
(325)
[HTML 0 KB]
[PDF 1006 KB]
(52)
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34208 |
Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨) |
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Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers |
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Chin. Phys. B
2022 Vol.31 (3): 34208-034208
[Abstract]
(429)
[HTML 0 KB]
[PDF 1295 KB]
(79)
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36104 |
Shan Feng(冯山), Ming Jiang(姜明), Qi-Hang Qiu(邱启航), Xiang-Hua Peng(彭祥花), Hai-Yan Xiao(肖海燕), Zi-Jiang Liu(刘子江), Xiao-Tao Zu(祖小涛), and Liang Qiao(乔梁) |
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First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice |
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Chin. Phys. B
2022 Vol.31 (3): 36104-036104
[Abstract]
(352)
[HTML 1 KB]
[PDF 5634 KB]
(189)
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28701 |
Xin Liu(刘欣), Qing-Hao Meng(孟庆昊), Jing Ding(丁晶), Zhi-Chen Bai(白志晨), Jia-Hui Wang(王佳慧), Cong Zhang(张聪), Bo Su(苏波), and Cun-Lin Zhang(张存林) |
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Terahertz generation and detection of LT-GaAs thin film photoconductive antennas excited by lasers of different wavelengths |
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Chin. Phys. B
2022 Vol.31 (2): 28701-028701
[Abstract]
(474)
[HTML 1 KB]
[PDF 1844 KB]
(105)
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18505 |
Ruize Feng(封瑞泽), Bo Wang(王博), Shurui Cao(曹书睿), Tong Liu(刘桐), Yongbo Su(苏永波), Wuchang Ding(丁武昌), Peng Ding(丁芃), and Zhi Jin(金智) |
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Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs |
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Chin. Phys. B
2022 Vol.31 (1): 18505-018505
[Abstract]
(472)
[HTML 1 KB]
[PDF 1023 KB]
(223)
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110201 |
Guo-Feng Wu(武国峰), Jun Wang(王俊), Wei-Rong Chen(陈维荣), Li-Na Zhu(祝丽娜), Yuan-Qing Yang(杨苑青), Jia-Chen Li(李家琛), Chun-Yang Xiao(肖春阳), Yong-Qing Huang(黄永清), Xiao-Min Ren(任晓敏), Hai-Ming Ji(季海铭), and Shuai Luo(罗帅) |
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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots |
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Chin. Phys. B
2021 Vol.30 (11): 110201-110201
[Abstract]
(509)
[HTML 0 KB]
[PDF 570 KB]
(99)
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78102 |
Yu-Bin Kang(亢玉彬), Feng-Yuan Lin(林逢源), Ke-Xue Li(李科学), Ji-Long Tang(唐吉龙), Xiao-Bing Hou(侯效兵), Deng-Kui Wang(王登魁), Xuan Fang(方铉), Dan Fang(房丹), Xin-Wei Wang(王新伟), and Zhi-Peng Wei(魏志鹏) |
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Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy |
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Chin. Phys. B
2021 Vol.30 (7): 78102-078102
[Abstract]
(516)
[HTML 1 KB]
[PDF 1192 KB]
(171)
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27304 |
Shu-Xing Zhou(周书星), Li-Kun Ai(艾立鹍), Ming Qi(齐鸣), An-Huai Xu(徐安怀), Jia-Sheng Yan(颜家圣), Shu-Sen Li(李树森), and Zhi Jin(金智) |
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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing |
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Chin. Phys. B
2021 Vol.30 (2): 27304-0
[Abstract]
(398)
[HTML 1 KB]
[PDF 615 KB]
(105)
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16102 |
Ze-Yuan Yang(杨泽园), Jun Wang(王俊), Guo-Feng Wu(武国峰), Yong-Qing Huang(黄永清), Xiao-Min Ren(任晓敏), Hai-Ming Ji(季海铭), and Shuai Luo(罗帅) |
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Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates |
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Chin. Phys. B
2021 Vol.30 (1): 16102-
[Abstract]
(446)
[HTML 1 KB]
[PDF 755 KB]
(90)
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57306 |
Lu-Wei Qi(祁路伟), Xiao-Yu Liu(刘晓宇), Jin Meng(孟进), De-Hai Zhang(张德海), Jing-Tao Zhou(周静涛) |
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Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure |
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Chin. Phys. B
2020 Vol.29 (5): 57306-057306
[Abstract]
(617)
[HTML 1 KB]
[PDF 874 KB]
(122)
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10703 |
Jia-Yao Huang(黄佳瑶), Lin Shang(尚林), Shu-Fang Ma(马淑芳), Bin Han(韩斌), Guo-Dong Wei(尉国栋), Qing-Ming Liu(刘青明), Xiao-Dong Hao(郝晓东), Heng-Sheng Shan(单恒升), Bing-She Xu(许并社) |
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Low temperature photoluminescence study of GaAs defect states |
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Chin. Phys. B
2020 Vol.29 (1): 10703-010703
[Abstract]
(730)
[HTML 1 KB]
[PDF 956 KB]
(197)
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124207 |
H Noverola-Gamas, L M Gaggero-Sager, O Oubram |
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Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells |
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Chin. Phys. B
2019 Vol.28 (12): 124207-124207
[Abstract]
(573)
[HTML 1 KB]
[PDF 506 KB]
(165)
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118102 |
Jing Zhang(张静), Hong-Liang Lv(吕红亮), Hai-Qiao Ni(倪海桥), Shi-Zheng Yang(杨施政), Xiao-Ran Cui(崔晓然), Zhi-Chuan Niu(牛智川), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate |
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Chin. Phys. B
2019 Vol.28 (11): 118102-118102
[Abstract]
(600)
[HTML 1 KB]
[PDF 2517 KB]
(143)
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76401 |
Yi-Lan Liang(梁艺蓝), Zhen Yao(姚震), Xue-Tong Yin(殷雪彤), Peng Wang(王鹏), Li-Xia Li(李利霞), Dong Pan(潘东), Hai-Yan Li(李海燕), Quan-Jun Li(李全军), Bing-Bing Liu(刘冰冰), Jian-Hua Zhao(赵建华) |
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Semiconductor-metal transition in GaAs nanowires under high pressure |
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Chin. Phys. B
2019 Vol.28 (7): 76401-076401
[Abstract]
(729)
[HTML 1 KB]
[PDF 890 KB]
(234)
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128102 |
Yong-Gang Zhang(张永刚), Yi Gu(顾溢), Xiu-Mei Shao(邵秀梅), Xue Li(李雪), Hai-Mei Gong(龚海梅), Jia-Xiong Fang(方家熊) |
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Short-wave infrared InGaAs photodetectors and focal plane arrays |
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Chin. Phys. B
2018 Vol.27 (12): 128102-128102
[Abstract]
(610)
[HTML 1 KB]
[PDF 577 KB]
(332)
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67204 |
Xiong He(何雄), Zhi-Gang Sun(孙志刚) |
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Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device |
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Chin. Phys. B
2018 Vol.27 (6): 67204-067204
[Abstract]
(854)
[HTML 0 KB]
[PDF 978 KB]
(248)
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28502 |
Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智) |
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Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2018 Vol.27 (2): 28502-028502
[Abstract]
(645)
[HTML 0 KB]
[PDF 1730 KB]
(281)
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17302 |
Wei-Min Zheng(郑卫民), Wei-Yan Cong(丛伟艳), Su-Mei Li(李素梅), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北) |
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Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells |
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Chin. Phys. B
2018 Vol.27 (1): 17302-017302
[Abstract]
(622)
[HTML 1 KB]
[PDF 642 KB]
(208)
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98506 |
Yao-yao Sun(孙姚耀), Yue-xi Lv(吕粤希), Xi Han(韩玺), Chun-yan Guo(郭春妍), Zhi Jiang(蒋志), Hong-yue Hao(郝宏玥), Dong-wei Jiang(蒋洞微), Guo-wei Wang(王国伟), Ying-qiang Xu(徐应强), Zhi-chuan Niu(牛智川) |
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Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices |
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Chin. Phys. B
2017 Vol.26 (9): 98506-098506
[Abstract]
(790)
[HTML 1 KB]
[PDF 327 KB]
(326)
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88702 |
Jian-Xing Xu(徐建星), Jin-Lun Li(李金伦), Si-Hang Wei(魏思航), Ben Ma(马奔), Yi Zhang(张翼), Yu Zhang(张宇), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) |
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Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm |
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Chin. Phys. B
2017 Vol.26 (8): 88702-088702
[Abstract]
(718)
[HTML 1 KB]
[PDF 1916 KB]
(208)
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37306 |
Jie Huang(黄杰), Wenwen Gu(顾雯雯), Qian Zhao(赵倩) |
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Broadband microwave frequency doubler based on left-handed nonlinear transmission lines |
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Chin. Phys. B
2017 Vol.26 (3): 37306-037306
[Abstract]
(630)
[HTML 0 KB]
[PDF 853 KB]
(324)
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128101 |
Shi-Yan Li(李士颜), Xu-Liang Zhou(周旭亮), Xiang-Ting Kong(孔祥挺), Meng-Ke Li(李梦珂), Jun-Ping Mi(米俊萍), Meng-Qi Wang(王梦琦), Jiao-Qing Pan(潘教青) |
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Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate |
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Chin. Phys. B
2016 Vol.25 (12): 128101-128101
[Abstract]
(734)
[HTML 1 KB]
[PDF 1510 KB]
(215)
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97305 |
Jia Luo(罗佳), Gang Xiang(向钢), Tian Yu(余天), Mu Lan(兰木), Xi Zhang(张析) |
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Structural, electronic, and magnetic properties of transition-metal atom adsorbed two-dimensional GaAs nanosheet |
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Chin. Phys. B
2016 Vol.25 (9): 97305-097305
[Abstract]
(764)
[HTML 1 KB]
[PDF 761 KB]
(429)
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67306 |
Li-Shu Wu(吴立枢), Yan Zhao(赵岩), Hong-Chang Shen(沈宏昌) You-Tao Zhang(张有涛), Tang-Sheng Chen(陈堂胜) |
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Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip |
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Chin. Phys. B
2016 Vol.25 (6): 67306-067306
[Abstract]
(760)
[HTML 1 KB]
[PDF 1284 KB]
(324)
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48505 |
Gang-Cheng Jiao(焦岗成), Zheng-Tang Liu(刘正堂), Hui Guo(郭晖), Yi-Jun Zhang(张益军) |
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Comparison of blue-green response between transmission-mode GaAsP-and GaAs-based photocathodes grown by molecular beam epitaxy |
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Chin. Phys. B
2016 Vol.25 (4): 48505-048505
[Abstract]
(662)
[HTML 1 KB]
[PDF 1005 KB]
(479)
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47302 |
Wei-Min Zheng(郑卫民), Su-Mei Li(李素梅), Wei-Yan Cong(丛伟艳), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北) |
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Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well |
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Chin. Phys. B
2016 Vol.25 (4): 47302-047302
[Abstract]
(701)
[HTML 1 KB]
[PDF 304 KB]
(317)
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37310 |
Zhen-Hua Wu(武振华), Lei Chen(陈蕾), Qiang Tian(田强) |
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Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates |
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Chin. Phys. B
2016 Vol.25 (3): 37310-037310
[Abstract]
(583)
[HTML 1 KB]
[PDF 314 KB]
(357)
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127304 |
Liu Chao-Wen (刘超文), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Lu Han-Han (卢汉汉) |
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High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment |
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Chin. Phys. B
2015 Vol.24 (12): 127304-127304
[Abstract]
(704)
[HTML 1 KB]
[PDF 343 KB]
(360)
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108802 |
Zheng Xin-He (郑新和), Liu San-Jie (刘三姐), Xia Yu (夏宇), Gan Xing-Yuan (甘兴源), Wang Hai-Xiao (王海啸), Wang Nai-Ming (王乃明), Yang Hui (杨辉) |
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GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE |
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Chin. Phys. B
2015 Vol.24 (10): 108802-108802
[Abstract]
(669)
[HTML 1 KB]
[PDF 362 KB]
(508)
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28101 |
Wang Jun (王俊), Hu Hai-Yang (胡海洋), Deng Can (邓灿), He Yun-Rui (贺云瑞), Wang Qi (王琦), Duan Xiao-Feng (段晓峰), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏) |
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Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition |
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Chin. Phys. B
2015 Vol.24 (2): 28101-028101
[Abstract]
(761)
[HTML 0 KB]
[PDF 689 KB]
(464)
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128503 |
Li Jun-Shuai (李军帅), Zhang Xia (张霞), Yan Xin (颜鑫), Chen Xiong (陈雄), Li Liang (李亮), Cui Jian-Gong (崔建功), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏) |
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Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays |
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Chin. Phys. B
2014 Vol.23 (12): 128503-128503
[Abstract]
(727)
[HTML 1 KB]
[PDF 2390 KB]
(473)
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17806 |
Yu Jin-Ling (俞金玲), Chen Yong-Hai (陈涌海), Lai Yun-Feng (赖云锋), Cheng Shu-Ying (程树英) |
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Spin–orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells |
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Chin. Phys. B
2014 Vol.23 (1): 17806-017806
[Abstract]
(627)
[HTML 1 KB]
[PDF 359 KB]
(433)
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127307 |
Huang Jie (黄杰), Zhao Qian (赵倩), Yang Hao (杨浩), Dong Jun-Rong (董军荣), Zhang Hai-Ying (张海英) |
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A monolithic distributed phase shifter based on right-handed nonlinear transmission lines at 30 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 127307-127307
[Abstract]
(595)
[HTML 1 KB]
[PDF 406 KB]
(513)
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97301 |
Zhu Shu-Yan (朱述炎), Xu Jing-Ping (徐静平), Wang Li-Sheng (汪礼胜), Huang Yuan (黄苑) |
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Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer |
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Chin. Phys. B
2013 Vol.22 (9): 97301-097301
[Abstract]
(640)
[HTML 1 KB]
[PDF 271 KB]
(556)
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94208 |
Xu Yun (徐云), Wang Yong-Bin (王永宾), Zhang Yu (张宇), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠) |
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High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers |
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Chin. Phys. B
2013 Vol.22 (9): 94208-094208
[Abstract]
(650)
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[PDF 242 KB]
(569)
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77306 |
Chang Hu-Dong (常虎东), Sun Bing (孙兵), Xue Bai-Qing (薛百清), Liu Gui-Ming (刘桂明), Zhao Wei (赵威), Wang Sheng-Kai (王盛凯), Liu Hong-Gang (刘洪刚) |
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Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate |
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Chin. Phys. B
2013 Vol.22 (7): 77306-077306
[Abstract]
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[PDF 503 KB]
(640)
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37802 |
Gu Yi (顾溢), Zhang Yong-Gang (张永刚), Song Yu-Xin (宋禹忻), Ye Hong (叶虹), Cao Yuan-Ying (曹远迎), Li Ai-Zhen (李爱珍), Wang Shu-Min (王庶民) |
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Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence |
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Chin. Phys. B
2013 Vol.22 (3): 37802-037802
[Abstract]
(825)
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[PDF 305 KB]
(1165)
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123601 |
Liu Li-Ren (刘立仁), Zhu Heng-Jiang (祝恒江), Liu Zhi-Feng (刘志锋), Wu Peng (吴鹏) |
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Structures, stabilities, and electronic properties of GaAs tubelike clusters and single-walled GaAs nanotubes |
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Chin. Phys. B
2012 Vol.21 (12): 123601-123601
[Abstract]
(1366)
[HTML 1 KB]
[PDF 906 KB]
(1249)
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67303 |
Dong Jun-Rong(董军荣), Yang Hao(杨浩), Tian Chao(田超), Huang Jie(黄杰), and Zhang Hai-Ying(张海英) |
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A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications |
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Chin. Phys. B
2012 Vol.21 (6): 67303-067303
[Abstract]
(1515)
[HTML 1 KB]
[PDF 632 KB]
(848)
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58501 |
Ge Ji(葛霁), Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智) |
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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors |
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Chin. Phys. B
2012 Vol.21 (5): 58501-058501
[Abstract]
(1489)
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[PDF 187 KB]
(1043)
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34214 |
Chen Liang(陈亮), Qian Yun-Sheng(钱芸生), Zhang Yi-Jun(张益军), and Chang Ben-Kang(常本康) |
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Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures |
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Chin. Phys. B
2012 Vol.21 (3): 34214-034214
[Abstract]
(1163)
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[PDF 273 KB]
(929)
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48101 |
Zhang Bi-Chan(张毕禅), Zhou Xun(周勋), Luo Zi-Jiang(罗子江) , Guo Xiang(郭祥), and Ding Zhao(丁召) |
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Step instability of the In0.2Ga0.8As (001) surface during annealing |
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Chin. Phys. B
2012 Vol.21 (4): 48101-048101
[Abstract]
(1211)
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[PDF 298 KB]
(558)
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46103 |
Zhou Xun(周勋), Luo Zi-Jiang(罗子江), Guo Xiang(郭祥), Zhang Bi-Chan(张毕禅), Shang Lin-Tao(尚林涛), Zhou Qing(周清), Deng Chao-Yong(邓朝勇), and Ding Zhao(丁召) |
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Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns |
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Chin. Phys. B
2012 Vol.21 (4): 46103-046103
[Abstract]
(1386)
[HTML 1 KB]
[PDF 120 KB]
(638)
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87902 |
Zhang Jun-Ju (张俊举), Chang Ben-Kang (常本康), Fu Xiao-Qian (付小倩), Du Yu-Jie (杜玉杰), Li Biao (李飙), Zou Ji-Jun (邹继军) |
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Influence of cesium on the stability of a GaAs photocathode |
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Chin. Phys. B
2011 Vol.20 (8): 87902-087902
[Abstract]
(1653)
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[PDF 206 KB]
(1066)
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87308 |
Ren Ling(任玲) and Chang Ben-Kang(常本康) |
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Modulation transfer function characteristic of uniform-doping transmission-mode GaAs/GaAlAs photocathode |
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Chin. Phys. B
2011 Vol.20 (8): 87308-087308
[Abstract]
(1547)
[HTML 0 KB]
[PDF 603 KB]
(649)
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68502 |
Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美) |
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Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition |
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Chin. Phys. B
2011 Vol.20 (6): 68502-068502
[Abstract]
(1507)
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[PDF 814 KB]
(931)
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47801 |
Zhao Jing(赵静), Chang Ben-Kang(常本康), Xiong Ya-Juan(熊雅娟) and Zhang Yi-Jun(张益军) |
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Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes |
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Chin. Phys. B
2011 Vol.20 (4): 47801-047801
[Abstract]
(1457)
[HTML 1 KB]
[PDF 607 KB]
(1589)
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108503 |
Liang De-Chun(梁德春), An Qi(安琪), Jin Peng(金鹏), Li Xin-Kun(李新坤), Wei Heng(魏恒), Wu Ju(吴巨), and Wang Zhan-Guo(王占国) |
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Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes |
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Chin. Phys. B
2011 Vol.20 (10): 108503-108503
[Abstract]
(1229)
[HTML 0 KB]
[PDF 568 KB]
(809)
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18102 |
He Ji-Fang(贺继方), Niu Zhi-Chuan(牛智川), Chang Xiu-Ying(常秀英), Ni Hai-Qiao(倪海桥), Zhu Yan(朱岩), Li Mi-Feng(李密锋), and Shang Xiang-Jun(尚向军) |
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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate |
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Chin. Phys. B
2011 Vol.20 (1): 18102-018102
[Abstract]
(1695)
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[PDF 6465 KB]
(2353)
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37302 |
Xu Jing-Bo(徐静波), Zhang Hai-Ying(张海英), Fu Xiao-Jun(付晓君), Guo Tian-Yi(郭天义), and Huang Jie(黄杰) |
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Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition |
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Chin. Phys. B
2010 Vol.19 (3): 37302-037302
[Abstract]
(1792)
[HTML 1 KB]
[PDF 1913 KB]
(1437)
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127203 |
Huang Jie(黄杰), Yang Hao(杨浩), Tian Chao(田超), Dong Jun-Rong(董军荣), Zhang Hai-Ying(张海英), and Guo Tian-Yi(郭天义) |
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Design and manufacture of planar GaAs Gunn diode for millimeter wave application |
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Chin. Phys. B
2010 Vol.19 (12): 127203-127203
[Abstract]
(1591)
[HTML 1 KB]
[PDF 598 KB]
(1201)
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4541 |
Zhang Yi-Jun(张益军), Chang Ben-Kang(常本康), Yang Zhi(杨智), Niu Jun(牛军), and Zou Ji-Jun(邹继军) |
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Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy |
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Chin. Phys. B
2009 Vol.18 (10): 4541-4546
[Abstract]
(1722)
[HTML 1 KB]
[PDF 193 KB]
(954)
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4300 |
Liang Song (梁 松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Zhao Ling-Juan (赵玲娟), Wang Lu-Feng (王鲁峰), Zhou Fan (周 帆), Shu Hui-Yun (舒惠云), Bian Jing (边 静), An Xin (安 欣), Wang Wei (王 圩) |
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Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition |
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Chin. Phys. B
2008 Vol.17 (11): 4300-4304
[Abstract]
(1375)
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[PDF 457 KB]
(583)
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817 |
Fu Sheng-Hui(付生辉), Song Guo-Feng(宋国峰), and Chen Liang-Hui(陈良惠) |
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Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes |
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Chin. Phys. B
2007 Vol.16 (3): 817-820
[Abstract]
(1626)
[HTML 0 KB]
[PDF 148 KB]
(821)
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2125 |
Wang Jun(王俊), Ma Xiao-Yu(马骁宇), Bai Yi-Ming(白一鸣), Cao Li(曹力), and Wu Da-Jin(吴大进) |
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Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes |
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Chin. Phys. B
2006 Vol.15 (9): 2125-2129
[Abstract]
(1137)
[HTML 1 KB]
[PDF 140 KB]
(490)
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2120 |
Wang Chang(王长) and Zhang Yong-Hua(张拥华) |
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Resonant tunnelling of electrons in multi-step single-barrier heterostructures |
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Chin. Phys. B
2006 Vol.15 (9): 2120-2124
[Abstract]
(1074)
[HTML 0 KB]
[PDF 131 KB]
(792)
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802 |
Lu Lai-Yu (逯来玉), Chen Xiang-Rong (陈向荣), Yu Bai-Ru (于白茹), Gou Qing-Quan (芶清泉) |
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First-principles calculations for transition phase and thermodynamic properties of GaAs |
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Chin. Phys. B
2006 Vol.15 (4): 802-806
[Abstract]
(1608)
[HTML 1 KB]
[PDF 252 KB]
(938)
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2735 |
Li Dong-Lin(李东临) and Zeng Yi-Ping(曾一平） |
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Self-consistent analysis of double-$\delta$-doped InAlAs/InGaAs/InP HEMTs |
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Chin. Phys. B
2006 Vol.15 (11): 2735-2741
[Abstract]
(1540)
[HTML 1 KB]
[PDF 163 KB]
(716)
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2145 |
Liu Fa-Min (刘发民), Zhang Li-De (张立德), Li Guo-Hua (李国华) |
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Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films |
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Chin. Phys. B
2005 Vol.14 (10): 2145-2148
[Abstract]
(1481)
[HTML 1 KB]
[PDF 222 KB]
(611)
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133 |
Wang Xiao-Qiu (王晓秋), Wu Shi-Fa (吴世法), Jian Guo-Shu (简国树), Pan Shi (潘石) |
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Simulation and optimization of pyramidal AlGaAs probe with ultra-small spot size and high throughput |
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Chin. Phys. B
2005 Vol.14 (1): 133-136
[Abstract]
(1085)
[HTML 1 KB]
[PDF 1721 KB]
(389)
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218 |
Zhou Da-Yong (周大勇), Lan Qing (澜清), Kong Yun-Chuan (孔云川), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川) |
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Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy |
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Chin. Phys. B
2003 Vol.12 (2): 218-221
[Abstract]
(1094)
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[PDF 474 KB]
(450)
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