Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

doi:10.1088/1674-1056/20/1/018102

Abstract Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In_0.17Ga_0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III–V compound semiconductor optoelectronic devices on Ge substrates.

Keywords: molecular beam epitaxy anti-phase domain GaAs/Ge interface

Received: 31 March 2010
Revised: 01 July 2010
Accepted manuscript online:

PACS:	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	68.35.Ct	(Interface structure and roughness)
	68.65.Fg	(Quantum wells)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60625405), and the National Basic Research Program of China (Grant Nos. 2007CB936304 and 2010CB327601).

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He Ji-Fang(贺继方), Niu Zhi-Chuan(牛智川), Chang Xiu-Ying(常秀英), Ni Hai-Qiao(倪海桥), Zhu Yan(朱岩), Li Mi-Feng(李密锋), and Shang Xiang-Jun(尚向军) Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 2011 Chin. Phys. B 20 018102

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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

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