First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

doi:10.1088/1674-1056/ac16cb

Abstract When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_0.5Ga_0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_0.5Ga_0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that Al_As, Ga_As, and Al_Ga antisite defects are introduced to improve the hole or electron mobility of GaAs/Al_0.5Ga_0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.

Keywords: first-principles calculations GaAs/Al_0.5Ga_0.5As superlattice point defects electronic properties

Received: 26 April 2021
Revised: 10 July 2021
Accepted manuscript online: 22 July 2021

PACS:	61.82.Fk	(Semiconductors)
	61.72.uj	(III-V and II-VI semiconductors)
	73.63.-b	(Electronic transport in nanoscale materials and structures)
	61.72.Bb	(Theories and models of crystal defects)

Fund: Project supported by the NSAF Joint Foundation of China (Grant No. U1930120), the Key Natural Science Foundation of Gansu Province, China (Grant No. 20JR5RA211), and the National Natural Science Foundation of China (Grant No. 11774044).

Corresponding Authors: Hai-Yan Xiao
E-mail: hyxiao@uestc.edu.cn

Cite this article:

Shan Feng(冯山), Ming Jiang(姜明), Qi-Hang Qiu(邱启航), Xiang-Hua Peng(彭祥花), Hai-Yan Xiao(肖海燕), Zi-Jiang Liu(刘子江), Xiao-Tao Zu(祖小涛), and Liang Qiao(乔梁) First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice 2022 Chin. Phys. B 31 036104

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First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

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