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Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns |
Zhou Xun(周勋)a)b), Luo Zi-Jiang(罗子江)a)c), Guo Xiang(郭祥)a), Zhang Bi-Chan(张毕禅)a), Shang Lin-Tao(尚林涛)a), Zhou Qing(周清) a), Deng Chao-Yong(邓朝勇)a), and Ding Zhao(丁召)a)† |
a. College of Science, Guizhou University, Guiyang 550025, China;
b. School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;
c. School of Education Administration, Guizhou College of Finance and Economics, Guiyang 550004, China |
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Abstract Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED pattern keeps a 4×3/(n×3) structure with increasing temperature, and surface segregation takes place until 470 ℃. The RHEED pattern develops into a metal-rich (4×2) structure as temperature increases to 495 ℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 ℃, the RHEED pattern turns into a GaAs(2×4) structure due to In desorption. While the As4 BEP comes up to a specific value (1.33×10-4 Pa-1.33×10-3 Pa), the surface temperature can delay the segregation and desorption. We find that As4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.
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Received: 30 July 2011
Revised: 04 October 2011
Accepted manuscript online:
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PACS:
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61.72.uj
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(III-V and II-VI semiconductors)
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60866001), the Special Assistant to High- Level Personnel Research Projects of Guizhou Provincial Party Committee Organization Department of China (Grant No. TZJF- 2008-31), the Support Plan of New Century Excellent Talents of Ministry of Education, China (Grant No. NCET-08-0651), the Doctorate Foundation of the State Education Ministry of China (Grant No. 20105201110003), the Special Governor Fund of Outstanding Professionals in Science and Technology and Education of Guizhou Province, China (Grant No. 2009114), the Doctoral Foundation Projects of Guizhou College of Finance and Economics in 2010. |
Corresponding Authors:
Ding Zhao,zding@gzu.edu.cn
E-mail: zding@gzu.edu.cn
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Cite this article:
Zhou Xun(周勋), Luo Zi-Jiang(罗子江), Guo Xiang(郭祥), Zhang Bi-Chan(张毕禅), Shang Lin-Tao(尚林涛), Zhou Qing(周清), Deng Chao-Yong(邓朝勇), and Ding Zhao(丁召) Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns 2012 Chin. Phys. B 21 046103
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[1] |
Kan S, Mokari T, Rothenberg E and Banin U 2003 Nature Mater. 2 155
|
[2] |
Chakrabarti A, Kratzer P and Scheffler M 2006 Phys. Rev. B 74 245328
|
[3] |
Sauvage-Simkin M, Garreau, Pinchaux Y R, Cavanna A, Véron M B, Jedrecy N, Landesman J P and Nagle J 1996 Appl. Surf. Sci. 104 646
|
[4] |
Martini S, Quivy A A, da Silva E C F and Leite J R 2002 it Appl. Phys. Lett. 81 2863
|
[5] |
Chattopadhyay K, Aubel J, Sundaram S, Ehret J E, Kaspi R and Evans K R 1997 J. Appl. Phys. 81 3601
|
[6] |
Sears L E, Millunchick J M and Pearson C 2008 J. Vac. Sci. & Tech. B 26 1948
|
[7] |
Millunchick J M, Riposan A, Dall B, Pearson C and Orr B G 2004 Surf. Sci. 550 1
|
[8] |
Zhou X, Yang Z R, Luo Z J, He Y Q, He H, Wei J, Deng C Y and Ding Z 2011 Acta Phys. Sin. 60 016109 (in Chinese)
|
[9] |
Luo Z J, Zhou X, Yang Z R, He Y Q, He H, Deng C Y and Ding Z 2010 Journal of Functional Materials 41 704 (in Chinese)
|
[10] |
Guo X, Luo Z J, Zhang B C, Shang L T, Zhou X, Deng C Y and Ding Z 2011 Physics Experimentation 31 11 (in Chinese)
|
[11] |
Riposan A, Millunchick J M and Pearson C 2006 Appl. Phys. Lett. 83 4518
|
[12] |
He Y Q, Luo Z J, Yang Z R, He H, Deng C Y, Zhou X and Ding Z 2010 Vacuum 47 70 (in Chinese)
|
[13] |
Tersoff J, Johnson M D and Orr B G 1997 Phys. Rev. Lett. 78 282
|
[14] |
Froyen S and Zunger A 1996 Phys. Rev. B 53 4570
|
[15] |
Gumen L N, Feldman E P, Yurchenko V M, Mel'nik T N and Krokhin A A 2000 Surf. Sci. 445 526
|
[16] |
Karpov S Y and Makarov Y N 2000 Thin Solid Films 380 71
|
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